Navitas’ Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) has introduced its Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs, optimized for rapid switching, high efficiency, and increased power density. These components are designed to enhance the performance of AI data centers and EV charging infrastructures.

The G3F MOSFETs showcase a 40% improvement in hard-switching figures-of-merit compared to competitors, enabling next-gen AI power supply units to increase output up to 10 kW and rack power up to 120 kW. Utilizing 'trench-assisted planar' technology, these devices offer superior performance, robustness, and lower power losses, with a 25°C lower case temperature and up to three times longer life than competing products.

In the AI sector, Navitas' latest 4.5 kW high-power density AI Server PSU boasts a power density of 138 W/inch³ and over 97% efficiency. For the EV market, the 1,200 V/34 mOhm G3F FETs enable 22 kW, 800V bi-directional OBC and 3 kW DC-DC converters to reach a power density of 3.5 kW/L and 95.5% peak efficiency.

Positive

• 40% improvement in hard-switching figures-of-merit compared to competition.
• Increases AI power supply units output to 10 kW and rack power to 120 kW.
• 25°C lower case temperature and up to 3x longer life than competing products.
• Achieves 'Titanium Plus' efficiency standards with over 97% efficiency in AI Server PSU.
• 22 kW, 800V bi-directional OBC and 3 kW DC-DC converters reach a power density of 3.5 kW/L and 95.5% peak efficiency.

Negative

• Potential high initial cost of adopting new technology.
• Market acceptance and reliability of 'trench-assisted planar' technology unproven long term.
• Possibility of increased competition leading to pricing pressures.

Insights

Tech Expert

Navitas Semiconductor's announcement of their Gen-3 ‘Fast’ 650 V and 1,200 V SiC MOSFETs presents significant advancements in power semiconductor technology. The proprietary ‘trench-assisted planar’ technology provides notably better performance compared to traditional trench MOSFETs. These improvements include superior switching speeds, which enhance efficiency and reduce power losses. A lower RDS(ON) (resistance when the transistor is on) at high temperatures denotes reduced energy dissipation and better thermal management. These features make the technology particularly suitable for high-power applications like AI data centers and EV charging, which demand efficiency and reliability.

Additionally, the 40% improvement in hard-switching figures-of-merit (FOM) compared to competitors indicates a substantial competitive edge in both performance and power handling capacities. With increasing trends towards higher power density in data centers and the rapid adoption of electric vehicles, this technology is well-positioned to meet future demands. However, the challenge will lie in the cost and scalability of manufacturing to meet large-scale applications.

Market Research Analyst

The introduction of Navitas' Gen-3 SiC MOSFETs is poised to make a substantial impact on the semiconductor and related markets. The focus on AI data centers and EV charging infrastructure aligns well with high-growth sectors. AI data centers are expanding quickly, driven by the exponential growth in AI applications, while EV charging infrastructure is critical to the broader adoption of electric vehicles. Navitas’ ability to deliver higher efficiency and power capacity supports these industries' goals to reduce energy consumption and increase operational efficiencies.

For investors, the potential market expansion into high-demand sectors signifies positive long-term growth prospects. However, the competitive landscape in SiC technology is intense, with established players also making strides in innovation. Navitas' performance claims will need to be validated in real-world applications to secure sustained investor confidence.

World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs

TORRANCE, Calif., June 06, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.

The G3F family is optimized for high-speed switching performance, resulting in 40% improvement to hard-switching figures-of-merits (FOMs) compared to competition in CCM TPPFC systems. This will enable increasing the wattage of next-generation AI power supply units (PSUs) up to 10 kW, and power per rack increase from 30 kW to 100-120 kW.

The G3F GeneSiC MOSFETs   are developed using a proprietary ‘trench-assisted planar’ technology and offer better-than-trench MOSFET performance, while also providing superior robustness, manufacturability and cost than competition. G3F MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.

The ‘trench-assisted planar’ technology enables an extremely low R_DS(ON) increase versus temperature, which results in the lowest power losses across the complete operating range and offers up to 20% lower R_DS(ON) under real-life operation at high temperatures compared to competition.

Additionally, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.

Navitas’ latest 4.5 kW high-power density AI Server PSU reference design in CRPS185 form-factor, showcases the 650 V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe™ Power ICs in the LLC stage, a power density of 138 W/inch³ and peak efficiency above 97% is realized, which comfortably achieves ‘Titanium Plus’ efficiency standards, now mandatory in Europe.

For the EV market, 1,200 V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22 kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5 kW/L and a peak efficiency of 95.5%.

“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high-reliability and robustness for high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600 kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”

Parts are available now to qualified customers. Please contact sicsales@navitassemi.com for more information.

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas was the world’s first semiconductor company to be CarbonNeutral^®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact:

Llew Vaughan-Edmunds, Senior Director of Corporate Marketing & Product Management
info@navitassemi.com

Stephen Oliver, VP of Corporate Marketing
ir@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/a5982a79-e6fe-4dc3-b65c-21387cb7a9f9

FAQ

What are Navitas' Gen-3 SiC MOSFETs?

Navitas' Gen-3 'Fast' (G3F) 650 V and 1,200 V SiC MOSFETs are optimized for rapid switching, high efficiency, and increased power density in applications like AI data centers and EV charging.

How do Navitas' G3F MOSFETs benefit AI data centers?

Navitas' G3F MOSFETs offer a 40% improvement in hard-switching figures-of-merit, enabling AI power supply units to increase output up to 10 kW and rack power up to 120 kW.

What efficiency do Navitas' G3F MOSFETs achieve in AI Server PSUs?

Navitas' G3F MOSFETs achieve a power density of 138 W/inch³ and peak efficiency above 97%, meeting 'Titanium Plus' efficiency standards.

How do G3F MOSFETs improve EV charging?

For the EV market, the 1,200 V/34 mOhm G3F FETs enable 22 kW, 800V bi-directional OBC and 3 kW DC-DC converters to achieve a power density of 3.5 kW/L and a peak efficiency of 95.5%.

What is the unique technology used in Navitas' G3F MOSFETs?

Navitas' G3F MOSFETs use a proprietary 'trench-assisted planar' technology, offering better-than-trench MOSFET performance, lower power losses, and superior robustness.

What is the potential lifespan improvement offered by G3F MOSFETs?

Navitas' G3F MOSFETs offer up to three times longer life than other SiC products, thanks to superior thermal management and robustness.