Navitas GaN and SiC Technologies to Enable Next-Gen AI Power Delivery
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Insights
The announcement by Navitas Semiconductor regarding the development of server power platforms to accommodate the increasing power demands of AI processors is a significant development within the semiconductor and data center industries. The transition from traditional 300W CPUs to high-performance AI processors demanding up to 1000W represents a significant shift in energy consumption patterns in data centers. The move toward gallium nitride (GaN) and silicon carbide (SiC) technologies is noteworthy, as these materials are known for their higher efficiency and power density compared to traditional silicon-based semiconductors.
From an energy technology perspective, the efficiencies over 97% and power densities over 130W/in3 are exceptional, potentially setting new industry benchmarks. These advancements could lead to reduced operational costs for data centers due to lower energy waste and potentially smaller footprint due to higher power density. Moreover, the rapid progression from a 3.2kW to a 4.5kW platform and plans for an 8-10kW platform by the end of 2024, illustrates the pace at which Navitas is innovating to meet market demands.
The strategic roadmap laid out by Navitas Semiconductor is indicative of the company's response to market trends where AI's computational demands are growing exponentially. By positioning themselves with over 20 data center customer projects in development, Navitas is potentially securing a significant market share in the next-generation power IC industry. Their focus on GaN and SiC technologies taps into the growing demand for more efficient power solutions, which is a direct response to the global push for sustainability and reduced carbon footprints in technology operations.
Furthermore, the company's engagement with major data-center customers for the full platform launch in Q4 2024 suggests a strong go-to-market strategy that could result in early adoption and potentially high revenue generation. The mention of 'first-time-right' designs implies a reduction in time and cost for data center customers, which could be a strong selling point and competitive advantage for Navitas.
Navitas Semiconductor's announcement has potential financial implications for the company and its stakeholders. The development of higher power platforms is likely to entail significant R&D investments, which could impact short-term financials. However, the anticipated increase in power efficiency and density could lead to long-term cost savings for end-users, which may translate into a strong value proposition and robust sales for Navitas.
With the company already generating market interest and expecting to drive millions in GaN or SiC revenues starting this year, investors might see this as a positive signal for future growth. The success of these platforms will depend on Navitas' ability to maintain technological leadership and meet the aggressive timelines it has set for itself. The financial performance will hinge on the adoption rate of these new platforms and the company's ability to scale production to meet the demand.
AI data centers demanding 3x power increase creating a significant industry challenge
TORRANCE, Calif., March 11, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their AI data center technology roadmap for to up to 3x power increase to support similar exponential growth in AI power demands expected in just the next 12-18 months.
Traditional CPUs require typically only 300W and the data center ac/dc power supplies would typically power the equivalent of 10 of these or 3,000W (3kW). High-performance AI processors like NVIDIA’s ‘Grace Hopper’ H100 are already demanding 700W each today, with next-gen ‘Blackwell’ B100 & B200 chips anticipated to increase to 1,000W or more by next year. To meet this exponential power increase, Navitas is developing server power platforms which rapidly increase from 3kW to up to 10kW. In August 2023, Navitas introduced a 3.2kW data center power platform utilizing latest GaN technology enabling over 100W/in3 and over
Today, Navitas also announces its plans to introduce an 8-10kW power platform by the end of 2024 to support 2025 AI power requirements. The platform will utilize newer GaN and SiC technologies and further advances in architecture to set all-new industry standards in power density, efficiency and time-to-market. Navitas is already engaged with major data-center customers, with full platform launch anticipated in Q4 ’24, completing this 3x increase in power demands in only 12-18 months.
Navitas’ unique data-center design center is creating these system designs to address the dramatic increases in AI data center power requirements, and assist customers to deploy platforms quickly and effectively to meet the accelerated time-to-market demands of rapid AI advances. System designs include complete design collateral with fully-tested hardware, schematics, bill-of-materials, layout, simulation and hardware test results to maximize first-time-right designs and fast revenue generation.
“The rapid development and deployment of artificial intelligence (AI) into global data centers has created a dramatic and unexpected power challenge for our entire industry,” noted Gene Sheridan, Navitas’ CEO and Co-Founder. “Our investment in leading-edge GaN and SiC technologies, combined with our unique data-center design center capabilities, have positioned us well. Our team has really stepped up to the challenge, with a 3x power increase in less than 18 months.”
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2024. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 250 Navitas patents are issued or pending. As of August 2023, over 125 million GaN and 12 million SiC units have been shipped, and with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact:
Stephen Oliver, VP Corporate Marketing & Investor Relations
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/8b69ba01-1fb3-46cd-9328-f776111730e7
FAQ
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