Navitas Delivers Grid-Connected Energy with 3.3 kV SiC and Bi-directional GaN ICs at PE International 2024

Rhea-AI Summary

Navitas Semiconductor (NVTS) to showcase next-gen power semiconductors at Power Electronics International conference, tapping into a $1.3 trillion electrification opportunity.

Next-gen power semiconductors enable robust, efficient, grid-connected applications as part of a $1.3 trillion electrification opportunity

TORRANCE, Calif., March 27, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in the upcoming Power Electronics International conference on April 16^th- 17^th 2024, in Brussels, Belgium.

Grid reliability is a key factor in a $1.3 trillion power semiconductor opportunity as Navitas’ technologies accelerate the transition from fossil fuels to renewable energies. Navitas will introduce the latest GaNFast™ and GeneSiC™ products to the European audience, including new Gen-3 Fast SiC for high-power and higher-speed performance, plus GaNSafe™ - the world’s most protected GaN power devices.

Navitas will present the following on April 17^th:

"3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage," Dr. Ranbir Singh, EVP GeneSiC

Synopsis: The grid supplies energy from generators and delivers it to customers via transmission and distribution (T&D) networks. In the U.S., the use of electricity storage to support and optimize T&D has been limited due to high storage costs and limited design and operational experience. Recent improvements in storage and power technologies, however, coupled with changes in the marketplace, herald an era of expanding opportunity for electricity storage. SiC inverters will revolutionize electricity delivery, renewable energy integration, and energy storage. It is well-recognized that silicon-based semiconductors have inherent limitations that reduce their suitability for utility-scale applications.

"Bi-directional circuits open up new opportunities in off-grid applications," Alfred Hesener, Senior Director Industrial and Consumer Applications

Synopsis: Bi-directional circuits are critical to effectively smooth the supply/demand variation in renewable energy applications. In the past, they were expensive to make and complex to implement in power electronics applications. Wide bandgap GaN power ICs with integrated drive and advanced circuit functions deliver easy-to-use, reliable, high power density, and functionality for power factor correction circuits, solar inverters, and solid-state circuit breakers.

To meet with Navitas at PE International, contact eurosales@navitassemi.com.

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2024. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 250 Navitas patents are issued or pending. As of August 2023, over 125 million GaN and 12 million SiC units have been shipped, and with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral^®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact:

Stephen Oliver, VP Corporate Marketing & Investor Relations

ir@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/ce33a5c7-55e8-46b4-8a94-5fdba9b07127 

FAQ

What is Navitas Semiconductor (NVTS) announcing at the Power Electronics International conference?

Navitas Semiconductor will introduce the latest GaNFast™ and GeneSiC™ products, including new Gen-3 Fast SiC for high-power performance and GaNSafe™ - the world's most protected GaN power devices.

When and where will the Power Electronics International conference take place?

The Power Electronics International conference will be held on April 16th-17th, 2024, in Brussels, Belgium.

What key factor does Navitas Semiconductor (NVTS) emphasize in the power semiconductor opportunity?

Grid reliability is highlighted as a crucial factor in the $1.3 trillion power semiconductor opportunity by Navitas Semiconductor.

Who will present '3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage' at the conference?

Dr. Ranbir Singh, EVP GeneSiC, will present '3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage' at the Power Electronics International conference.

What are the benefits of bi-directional circuits in off-grid applications according to Navitas Semiconductor (NVTS)?

Bi-directional circuits enable effectively smoothing supply/demand variation in renewable energy applications and offer easy-to-use, reliable, high power density, and functionality for various power electronics applications.