Magnachip Expands Solar Energy Power Product Lineup with the Release of 1200V IGBT in TO-247PLUS Package
Magnachip Semiconductor (NYSE: MX) has announced the completion of its 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a TO-247PLUS package, designed for solar inverters. The new product, MBQA75T120RFS, is set for mass production in October 2024. It features improved heat dissipation and over 14% reduction in conduction loss compared to its predecessor. The IGBT includes a fast recovery anti-parallel diode and can operate at temperatures up to 175°C.
This release expands Magnachip's solar energy power product lineup, which now includes high-performance IGBTs and MXT MV MOSFETs. The company entered the solar inverter market in 2020 and has been steadily expanding its offerings. According to Omdia, the discrete IGBT and silicon-based MOSFET sectors in the renewable energy market are expected to grow at a 15% CAGR from 2024 to 2028.
Magnachip Semiconductor (NYSE: MX) ha annunciato il completamento del suo Transistor Bipolare a Gate Isolato (IGBT) da 1200V e 75A, in un pacchetto TO-247PLUS, progettato per inverter solari. Il nuovo prodotto, MBQA75T120RFS, è previsto per la produzione di massa nell'ottobre 2024. Presenta un miglioramento della dissipazione del calore e una riduzione superiore al 14% delle perdite per conduzione rispetto al suo predecessore. L'IGBT include un diodo a recupero veloce in configurazione anti-parallelo e può funzionare a temperature fino a 175°C.
Questa novità amplia la gamma di prodotti per l'energia solare di Magnachip, che ora include IGBT ad alte prestazioni e MOSFET MXT MV. L'azienda è entrata nel mercato degli inverter solari nel 2020 e ha costantemente ampliato la propria offerta. Secondo Omdia, i settori degli IGBT discreti e dei MOSFET a base di silicio nel mercato delle energie rinnovabili sono previsti in crescita con un CAGR del 15% dal 2024 al 2028.
Magnachip Semiconductor (NYSE: MX) ha anunciado la finalización de su Transistor Bipolar de Puerta Aislada (IGBT) de 1200V y 75A, en un paquete TO-247PLUS, diseñado para inversores solares. El nuevo producto, MBQA75T120RFS, está previsto para producción en masa en octubre de 2024. Presenta una mejora en la disipación de calor y una reducción superior al 14% en la pérdida de conducción en comparación con su predecesor. El IGBT incluye un diodo de recuperación rápida en configuración anti-paralela y puede operar a temperaturas de hasta 175°C.
Este lanzamiento amplía la línea de productos de energía solar de Magnachip, que ahora incluye IGBTs de alto rendimiento y MOSFETs MXT MV. La compañía entró en el mercado de inversores solares en 2020 y ha estado ampliando constantemente su oferta. Según Omdia, se espera que los sectores de IGBT discreto y MOSFETs basados en silicio en el mercado de energía renovable crezcan a una CAGR del 15% de 2024 a 2028.
Magnachip Semiconductor (NYSE: MX)는 1200V 75A 절연 게이트 양극 트랜지스터(IGBT)의 개발 완료를 발표했습니다. 이는 TO-247PLUS 패키지로, 태양광 인버터를 위해 설계되었습니다. 새로운 제품 MBQA75T120RFS는 2024년 10월 대량 생산에 들어갈 예정입니다. 이 제품은 열 방출이 개선되었고, 이전 모델에 비해 전도 손실이 14% 이상 감소했습니다. IGBT에는 빠른 회복의 병렬 다이오드가 포함되어 있으며, 최대 175°C의 온도에서 작동할 수 있습니다.
이번 발표는 Magnachip의 태양 에너지 전력 제품 라인업을 확장하며, 이제 고성능 IGBT와 MXT MV MOSFET이 포함되어 있습니다. 회사는 2020년에 태양광 인버터 시장에 진입하였으며, 지속적으로 제품을 확장해 오고 있습니다. Omdia에 따르면, 재생 에너지 시장의 이산형 IGBT 및 실리콘 기반 MOSFET 분야는 2024년부터 2028년까지 연 평균 15% 성장할 것으로 예상됩니다.
Magnachip Semiconductor (NYSE: MX) a annoncé l'achèvement de son Transistor Bipolaire à Porte Isolée (IGBT) de 1200V 75A, dans un boîtier TO-247PLUS, conçu pour les onduleurs solaires. Le nouveau produit, MBQA75T120RFS, est prévu pour une production de masse en octobre 2024. Il présente une amélioration de la dissipation thermique et une réduction de plus de 14% des pertes de conduction par rapport à son prédécesseur. L'IGBT comprend une diode à récupération rapide en configuration antiparallèle et peut fonctionner à des températures allant jusqu'à 175°C.
Ce lancement élargit la gamme de produits liés à l'énergie solaire de Magnachip, qui inclut maintenant des IGBTs haute performance et des MOSFETs MXT MV. L'entreprise est entrée sur le marché des onduleurs solaires en 2020 et a constamment élargi son offre. Selon Omdia, les secteurs des IGBT discrets et des MOSFET basés sur le silicium dans le marché des énergies renouvelables devraient connaître une croissance de 15% CAGR de 2024 à 2028.
Magnachip Semiconductor (NYSE: MX) hat die Fertigstellung seines 1200V 75A isolierten Gate-Bipolartransistors (IGBT) in einem TO-247PLUS-Gehäuse, das für Solarwechselrichter konzipiert wurde, bekannt gegeben. Das neue Produkt MBQA75T120RFS wird voraussichtlich im Oktober 2024 in die Massenproduktion gehen. Es bietet eine verbesserte Wärmeabfuhr und eine Reduzierung der Leitungsverluste um über 14% im Vergleich zu seinem Vorgänger. Der IGBT enthält eine schnell rückprallende antiparallele Diode und kann bei Temperaturen von bis zu 175°C betrieben werden.
Diese Neuheit erweitert Magnachips Produktpalette im Bereich Solarenergie, die nun Hochleistungs-IGBTs und MXT MV MOSFETs umfasst. Das Unternehmen trat 2020 in den Markt für Solarwechselrichter ein und hat sein Angebot kontinuierlich erweitert. Laut Omdia wird ein Wachstum der diskreten IGBT- und siliziumbasierten MOSFET-Segmente im Bereich erneuerbare Energien von 15% CAGR von 2024 bis 2028 erwartet.
- Expansion of product lineup with new 1200V 75A IGBT for solar inverters
- 14% reduction in conduction loss compared to previous generation
- Improved heat dissipation with TO-247PLUS package
- Expected 15% CAGR in discrete IGBT and silicon-based MOSFET sectors from 2024 to 2028
- None.
Magnachip's release of the 1200V 75A IGBT in TO-247PLUS package marks a significant advancement in solar inverter technology. The new product offers several key improvements:
- Enhanced heat dissipation due to the wide heat spreader in the TO-247PLUS package
- Over
14% reduction in conduction loss compared to the previous generation - Improved system reliability with stable operation under overload conditions
- Flexibility in application design, potentially replacing two 40A IGBTs
- Fast recovery anti-parallel diode for reduced switching losses
- Maximum operating junction temperature of 175°C
These features position Magnachip's new IGBT as a highly competitive option in the growing renewable energy market. The product's compliance with JEDEC standards also broadens its potential applications beyond solar inverters to include converters, uninterruptible power supply systems and general-purpose inverters.
The timing of this release aligns well with market trends, as Omdia projects a
Magnachip's strategic expansion of its solar energy power product lineup is a savvy move in the rapidly evolving renewable energy landscape. The company's focus on high-performance IGBTs and MXT MV MOSFETs demonstrates a keen understanding of the technical requirements in the solar energy market.
The diversification of Magnachip's product range, now including 650V and 1200V IGBTs with varying current ratings, positions the company to cater to a broader spectrum of solar inverter designs. This flexibility could be particularly advantageous as the solar industry continues to innovate and optimize system architectures.
Moreover, Magnachip's emphasis on power efficiency and thermal management aligns with the industry's push for more reliable and higher-performing solar energy systems. The
As the renewable energy sector experiences robust growth, Magnachip's expanded product lineup and focus on innovation position the company to capitalize on emerging opportunities. However, the company will need to navigate a competitive landscape and potential supply chain challenges as demand for these components increases in line with the projected market growth.
- The Company provides optimized solutions for the solar energy market with its diverse IGBT and MXT MV MOSFET* products
Magnachip provides optimized solutions for the solar energy market with its diverse IGBT and MXT MV MOSFET products. (Photo: Business Wire)
Magnachip entered the solar inverter market in 2020 by introducing the 1200V 40A IGBT (MBQ40T120QFS) and began offering the 650V 75A IGBT (MBQ75T65PEH) in 2022. Now, the Company unveils its latest 1200V 75A IGBT (MBQA75T120RFS), featuring its cutting-edge design technology and processes.
This new product, packaged in a TO-247PLUS with a wide heat spreader, improves heat dissipation as compared to the TO-247 package. Additionally, it enhances power efficiency by reducing conduction loss by over
Moreover, this new IGBT product provides application design flexibility, as its performance can replace that of two 40A IGBTs. Another notable feature is the incorporation of a fast recovery anti-parallel diode, which quickly removes residual current to reduce switching losses and guarantees a maximum operating junction temperature of 175°C. Designed in accordance with the standards of the Joint Electron Device Engineering Council (JEDEC), this product is suitable for a wide range of applications requiring strict power ratings and high efficiency, including solar inverters, converters, uninterruptible power supply systems, and general-purpose inverters.
According to market research firm Omdia, the discrete IGBT and silicon-based MOSFET sectors in the renewable energy market are expected to grow at a compound annual growth rate of
“With this new product launch, Magnachip’s solar energy power product lineup has been further strengthened and now boasts high-performance IGBTs and MXT MV MOSFETs that satisfy the technical requirements of applications in the solar energy market,” said YJ Kim, CEO of Magnachip. “We will continue to supply innovative power solutions targeting renewable energy applications and capitalize on growth opportunities within the industry.”
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*MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs
Magnachip’s solar energy IGBT product family
*Released in July, 2024
Product |
VCES [V] |
IC [A] @ TC=100℃ |
Package |
*MBQA75T120RFS |
1200V |
75A |
TO-247PLUS |
MBQ40T120QFS |
1200V |
40A |
TO-247 |
MBQ75T65PEH |
650V |
75A |
TO-247 |
MBQ40T65QES |
650V |
40A |
TO-247 |
Magnachip’s solar energy MXT MV MOSFET product family
Product |
VDS [V] |
VGS(th), typ. [V] |
*RDS(ON) [mΩ]
|
Qg, Typ [nC] |
Package |
|
Max. |
Typ. |
|||||
MDP20N116PTF |
200 |
3.75 |
11.6 |
10.6 |
83.0 |
TO-220 |
MDU150N113PTV |
150 |
3.1 |
11.3 |
9.5 |
36.0 |
PDFN56 |
MDT10N023 |
100 |
2.8 |
2.3 |
1.85 |
167.0 |
TOLL |
MDP1991 |
100 |
2.9 |
5.9 |
4.4 |
100.0 |
TO-220 |
Related Links
Power Solutions > Discrete IGBTs
Related Articles
Magnachip Unveils a New 650V IGBT for Solar Inverters
Magnachip Unveils New 8th-Generation 150V MXT MV MOSFETs
About Magnachip Semiconductor
Magnachip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communication, Internet of Things (“IoT”), consumer, computing, industrial and automotive applications. The Company provides a broad range of standard products to customers worldwide. Magnachip, with more than 40 years of operating history, owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.
View source version on businesswire.com: https://www.businesswire.com/news/home/20240729773628/en/
Steven C. Pelayo, CFA
The Blueshirt Group
Tel. +1(360) 808-5154
steven@blueshirtgroup.co
Mike Newsom
LouVan Communications, Inc.
Tel. +1-617-803-5385
mike.newsom@louvanpr.com
Min A KIM
Senior manager of Public Relations
Tel. +82-2-6903-3211
mina3.kim@magnachip.com
Source: Magnachip Semiconductor Corporation
FAQ
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