Vishay Intertechnology Best in Class 30 V N-Channel MOSFET Delivers High Power Density and Efficiency for Isolated and Non-Isolated Topologies
Vishay Intertechnology, Inc. (NYSE: VSH) has launched a new 30 V n-channel TrenchFET Gen V power MOSFET, the SiSS52DN, enhancing power density and efficiency. This device features an on-resistance of 0.95 mΩ at 10 V, a 5% improvement, and a figure of merit (FOM) of 29.8 mΩ*nC, representing a 29% enhancement over its predecessor. Designed for various applications, including DC/DC converters and synchronous rectification, it aims to reduce energy losses. Samples are available now with a 12-week lead time. Vishay continues to support numerous markets globally.
- Launch of the new SiSS52DN MOSFET with 0.95 mΩ on-resistance, a 5% improvement.
- 29% better figure of merit (FOM) at 29.8 mΩ*nC, reducing energy losses.
- Versatile application across various power conversion systems.
- None.
Devices Offer RDS(ON) Down to 0.95 mΩ and Improved FOM of 29.8 mΩ*nC in PowerPAK® 1212‑8S Package
MALVERN, Pa., May 24, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK® 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 V, a 5 % improvement over the previous-generation product. In addition, the device delivers on-resistance of 1.5 mΩ at 4.5 V, while its 29.8 mΩ*nC on-resistance times gate charge at 4.5 V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market.
The SiSS52DN’s FOM represents a 29 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
The SiSS52DN is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.
The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiSS52DN are available now, with lead times of 12 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.™ Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech™ is a trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product datasheet:
http://www.vishay.com/ppg?79977 (SiSS52DN)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72157719212960900
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
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