Latest Vishay Intertechnology Fourth-Generation 600 V E Series MOSFET Provides Industry-Low RDS(ON)*Qg FOM of 2.8 Ω*nC

Rhea-AI Summary

Vishay Intertechnology has unveiled the SiHK045N60E, a 600 V power MOSFET that enhances efficiency in telecom, server, and datacenter applications. The new device features a 27% reduction in on-resistance and 60% lower gate charge compared to previous models, achieving the industry’s lowest figures for its class. Built on the latest superjunction technology, it has a thermal resistance 11.8% lower than competitors. The MOSFET is now available in sample and production quantities, aimed at improving energy savings in power conversion systems.

Positive

• Introduced SiHK045N60E MOSFET with 27% lower on-resistance.
• Achieved 60% lower gate charge compared to earlier models.
• Lowest figures of merit in its class for gate charge times on-resistance.
• 11.8% lower thermal resistance compared to the nearest competitor.
• Availability in sample and production quantities for immediate market access.

Negative

• None.

Superjunction Device Lowers Conduction and Switching Losses, Increases Efficiency and Thermal Capability in Telecom, Server, and Datacenter Applications

MALVERN, Pa., Feb. 21, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the latest device in its fourth generation of 600 V E Series power MOSFETs. Providing high efficiency for telecom, server, and datacenter power supply applications, the Vishay Siliconix n-channel SiHK045N60E slashes on-resistance by 27 % compared with previous-generation 600 V E Series MOSFETs while delivering 60 % lower gate charge. This results in the industry’s lowest gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.

Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs required by the latest electronic systems. With the SiHK045N60E and upcoming devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and hard-switched AC/DC converter topologies.

Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHK045N60E features low typical on-resistance of 0.043 Ω at 10 V and ultra-low gate charge down to 65 nC. The device’s FOM of 2.8 Ω*nC is 3.4 % lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHK045N60E provides low effective output capacitance C_o(er) of 117 pF. These values translate into reduced conduction and switching losses to save energy. The SiHK045N60E’s thermal resistance R_thJC of 0.45 °C/W is 11.8 % lower than the closest competing device, providing a higher thermal capability.

Offered in the PowerPAK^® 10x12 package, the device released today is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.

Samples and production quantities of the SiHK045N60E are available now. Lead time information may be requested from your Vishay sales contact or by email to hvm@vishay.com.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.™ Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech™ is a trademark of Vishay Intertechnology. PowerPAK is a registered trademark of Siliconix incorporated.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

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Link to product datasheet:
http://www.vishay.com/ppg?92386 (SiHK045N60E)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720296429698

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com

FAQ

What is the significance of Vishay's SiHK045N60E power MOSFET introduction?

The SiHK045N60E power MOSFET significantly enhances efficiency and thermal performance in telecom, server, and datacenter applications.

How much has the on-resistance decreased in the SiHK045N60E compared to previous generations?

The on-resistance of the SiHK045N60E has decreased by 27% compared to earlier 600 V E Series MOSFETs.

What are the key specifications of the SiHK045N60E MOSFET?

The SiHK045N60E features an on-resistance of 0.043 Ω, a gate charge of 65 nC, and a thermal resistance of 0.45 °C/W.

When is the SiHK045N60E available for purchase?

Samples and production quantities of the SiHK045N60E are available now.