TI's GaN technology and real-time MCUs power LITEON Technology's new server power supply design
Texas Instruments (TXN) announced that LITEON Technology has chosen its gallium nitride (GaN) field effect transistors and C2000 real-time microcontrollers for a new high-performance server power supply unit targeting the North American market. This PSU achieves over 95 W/in³ power density and complies with the 80 Plus Titanium standards. The collaboration aims to address the increasing demand for compact, efficient power supplies in data centers, leveraging TI's advanced technology to enhance design flexibility and reliability.
- LITEON's adoption of TI's GaN FETs and C2000 MCUs enhances the performance of server power supply units.
- New PSU exceeds 95 W/in³ power density and meets 80 Plus Titanium efficiency standards.
- Collaboration aims to improve design flexibility and reduce project cycles for power supply solutions.
- None.
"Our collaboration with LITEON demonstrates how TI is helping designers answer the demands of high-voltage systems with end-to-end system know-how and a specialized portfolio of high-voltage semiconductors. By pairing the power of TI GaN products and C2000TM real-time MCUs, designers can better meet the demand for smaller, more reliable systems," said
LITEON Technology is a global leading provider of power management solutions, offering highly-efficient power supplies for data centers. "LITEON has been the leader in server power supplies and has faced the challenges of new technology with innovative solutions. High-performance servers increasingly demand more power in less space, where high power output, conversion efficiency, miniaturized components and heat dissipation are critical challenges. TI's GaN technology and C2000 real-time MCUs perfectly suit our solutions," said
Enabling efficient power supply design
Data centers, telecom equipment and many industrial applications are increasingly requiring larger power supplies, while also requiring reduced system size, weight, environmental impact and cost. This has challenged engineers to find new ways to reach higher power levels, in the same or smaller form factors, while also enhancing thermal performance. To address these power density challenges and requirements for future power supplies, LITEON leveraged TI GaN and C2000 real-time MCUs to achieve a flexible daughter-card design. The design also helps engineers shorten project design cycles by allowing them to scale the design to different power supply requirements.
LITEON design engineers collaborated with TI experts to accelerate the adoption of GaN technology in their PSU design, working together to optimize the power loop and daughter card layout. Additionally, LITEON leveraged TI's expertise in power FET and controller design to improve the reliability of the PSU through comprehensive system-level verification. The flexible high-resolution pulse-width-modulation (PWM) actuation from TI's C2000 real-time MCUs and GaN also helps engineers enable high switching frequency, advanced topologies, and switching schemes. To learn more about pairing TI GaN FETs and C2000 real-time MCUs, read the white paper "
To learn more about LITEON's newly released power supply design, see https://www.liteon.com/en-us.
For more information on TI's high-voltage technology, see https://www.ti.com/technologies/high-voltage.html.
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