TI helps maximize EV driving range with SiC gate driver
As EVs continue to grow in popularity, semiconductor innovations in traction inverter systems are helping overcome critical barriers to widespread adoption. Automakers can build safer, more efficient and more reliable silicon carbide (SiC)- and insulated-gate bipolar transistor (IGBT)-based traction inverters by designing with UCC5880-Q1, featuring real-time variable gate-drive strength, Serial Peripheral Interface (SPI), advanced SiC monitoring and protection, and diagnostics for functional safety.
"Designers of high-voltage applications like traction inverters face a unique set of challenges to optimize system efficiency and reliability in a small space," said Wenjia Liu, product line manager for high-power drivers at TI. "Not only does this new isolated gate driver help enable engineers to maximize driving range, but it also integrates safety features to reduce external components and design complexity. And it can be easily paired with other high-voltage power-conversion products such as our UCC14141-Q1 isolated bias supply module to improve power density and help engineers reach the highest levels of traction inverter performance."
Maximize EV driving range while reducing design complexity and cost
The need for higher reliability and power performance for EVs is continuously growing, as efficiency gains have a direct impact on operating range improvement per charge. But achieving any increase in efficiency is difficult for designers, given that the majority of traction inverters already operate at
By varying the gate-drive strength in real time, in steps between 20 A and 5 A, designers can improve system efficiency with the UCC5880-Q1 gate driver as much as
In addition, the UCC5880-Q1's SPI programmability and integrated monitoring and protection features can reduce design complexity as well as external component costs. Engineers can further reduce components and quickly prototype a more efficient traction inverter system using the SiC EV Traction Inverter Reference Design. This customizable, tested design includes the UCC5880-Q1, a bias-supply power module, real-time control MCUs and high-precision sensing.
See efficient traction inverter and other high-voltage designs at PCIM Europe 2023
TI is showcasing high-voltage innovations for a sustainable future, including the UCC5880-Q1, at the 2023 Power Conversion and Intelligent Motion (PCIM)
Throughout the conference, TI power experts will present in five sessions to address high voltage, high power density and low electromagnetic interference design challenges. Their schedule is available at TI.com/PCIM.
TI is committed to helping engineers unlock the power of high-voltage technology with innovations in power conversion and wide band-gap semiconductors.
Package, availability and pricing
Preproduction quantities of the automotive-grade, ISO26262-compliant UCC5880-Q1 are available now, only on TI.com, in a 10.5-mm-by-7.5-mm, 32-pin shrink small-outline package (SSOP). Pricing starts at
About Texas Instruments
Texas Instruments Incorporated (Nasdaq: TXN) is a global semiconductor company that designs, manufactures, tests and sells analog and embedded processing chips for markets such as industrial, automotive, personal electronics, communications equipment and enterprise systems. Our passion to create a better world by making electronics more affordable through semiconductors is alive today, as each generation of innovation builds upon the last to make our technology smaller, more efficient, more reliable and more affordable – making it possible for semiconductors to go into electronics everywhere. We think of this as Engineering Progress. It's what we do and have been doing for decades. Learn more at TI.com.
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