Tower Semiconductor Sets a New RFSOI Standard with Broadcom’s Wi-Fi RF Front-End Modules for Next-Gen Mobile Applications
Tower Semiconductor (NASDAQ/TASE: TSEM) has announced the production of Wi-Fi 7 RF front-end module (FEM) devices using its advanced 300mm RFSOI technology. In collaboration with Broadcom (NASDAQ: AVGO), Tower has enabled fully integrated Wi-Fi FEM devices on a single RFSOI die, offering superior performance and efficiency compared to existing non-SOI technologies.
The partnership leverages Tower's leading RFSOI platform to enable innovative architectural options for integrated front-end module designs. This highly integrated process reduces chip area while supporting new features and frequency bands. Tower's RFSOI technology delivers best-in-class silicon-based switch and LNA performance, with widespread adoption in the industry.
Tower Semiconductor (NASDAQ/TASE: TSEM) ha annunciato la produzione di moduli RF front-end Wi-Fi 7 (FEM) utilizzando la sua avanzata tecnologia RFSOI da 300 mm. In collaborazione con Broadcom (NASDAQ: AVGO), Tower ha reso possibili dispositivi Wi-Fi FEM completamente integrati su un singolo die RFSOI, offrendo prestazioni e efficienza superiori rispetto alle tecnologie non-SOI esistenti.
La partnership sfrutta la piattaforma RFSOI leader di Tower per abilitare opzioni architettoniche innovative per i design di moduli front-end integrati. Questo processo altamente integrato riduce l'area del chip mantenendo il supporto per nuove caratteristiche e bande di frequenza. La tecnologia RFSOI di Tower offre una prestazione di switch e LNA basata su silicio di categoria superiore, con un'ampia adozione nell'industria.
Tower Semiconductor (NASDAQ/TASE: TSEM) ha anunciado la producción de dispositivos de módulo RF front-end Wi-Fi 7 (FEM) utilizando su avanzada tecnología RFSOI de 300 mm. En colaboración con Broadcom (NASDAQ: AVGO), Tower ha permitido dispositivos FEM Wi-Fi totalmente integrados en un solo chip RFSOI, ofreciendo rendimiento y eficiencia superiores en comparación con las tecnologías no-SOI existentes.
La asociación aprovecha la plataforma RFSOI líder de Tower para habilitar opciones arquitectónicas innovadoras para el diseño de módulos front-end integrados. Este proceso altamente integrado reduce el área del chip mientras apoya nuevas características y bandas de frecuencia. La tecnología RFSOI de Tower proporciona un rendimiento de interruptor y LNA basado en silicio de clase mundial, con una amplia adopción en la industria.
타워 반도체 (NASDAQ/TASE: TSEM)는 혁신적인 300mm RFSOI 기술을 사용하여 Wi-Fi 7 RF 프론트 엔드 모듈(FEM) 장치의 생산을 발표했습니다. 브로드컴(NASDAQ: AVGO)과 협력하여 타워는 단일 RFSOI 다이에서 완전히 통합된 Wi-Fi FEM 장치를 가능하게 하여 기존 비-SOI 기술에 비해 우수한 성능과 효율성을 제공합니다.
이 파트너십은 타워의 선도적인 RFSOI 플랫폼을 활용하여 통합 프론트 엔드 모듈 설계를 위한 혁신적인 아키텍처 옵션을 가능하게 합니다. 이 고도로 통합된 프로세스는 칩 면적을 줄이면서 새로운 기능과 주파수 대역을 지원합니다. 타워의 RFSOI 기술은 업계 최고 수준의 실리콘 기반 스위치 및 LNA 성능을 제공합니다.
Tower Semiconductor (NASDAQ/TASE: TSEM) a annoncé la production de modules RF front-end Wi-Fi 7 (FEM) utilisant sa technologie avancée RFSOI de 300 mm. En collaboration avec Broadcom (NASDAQ: AVGO), Tower a permis la création de dispositifs Wi-Fi FEM entièrement intégrés sur un seul die RFSOI, offrant des performances et une efficacité supérieures par rapport aux technologies non-SOI existantes.
Ce partenariat utilise la plateforme RFSOI de Tower pour permettre des options architecturales innovantes pour les designs de modules front-end intégrés. Ce processus hautement intégré réduit la surface du chip tout en prenant en charge de nouvelles fonctionnalités et bandes de fréquence. La technologie RFSOI de Tower fournit une performance de commutateur et LNA basée sur du silicium de premier ordre, avec une adoption répandue dans l'industrie.
Tower Semiconductor (NASDAQ/TASE: TSEM) hat die Produktion von Wi-Fi 7 RF-Front-End-Modulen (FEM) angekündigt, die mit seiner fortschrittlichen 300mm RFSOI-Technologie hergestellt werden. In Zusammenarbeit mit Broadcom (NASDAQ: AVGO) hat Tower vollständig integrierte Wi-Fi FEM-Geräte auf einem einzigen RFSOI-Die ermöglicht, die überlegene Leistung und Effizienz im Vergleich zu bestehenden Nicht-SOI-Technologien bieten.
Die Partnerschaft nutzt die führende RFSOI-Plattform von Tower, um innovative architektonische Optionen für integrierte Front-End-Modul-Designs zu ermöglichen. Dieser hochintegrierte Prozess verringert die Chipfläche und unterstützt gleichzeitig neue Funktionen und Frequenzbänder. Die RFSOI-Technologie von Tower bietet best-in-class Silizium-basiertes Schalter- und LNA-Leistung und hat in der Industrie breite Akzeptanz gefunden.
- Production of Wi-Fi 7 RF front-end module devices using advanced 300mm RFSOI technology
- Partnership with Broadcom for fully integrated Wi-Fi FEM devices on a single RFSOI die
- Superior performance and efficiency compared to existing non-SOI technologies
- Reduction in chip area despite increased complexity and support for new features
- Best-in-class silicon-based switch and LNA performance
- None.
Tower Semiconductor's collaboration with Broadcom on Wi-Fi 7 RF front-end modules (FEMs) marks a significant technological advancement. The integration of fully functional FEMs on a single RFSOI die is a game-changer for mobile connectivity. This innovation offers superior performance and efficiency compared to non-SOI technologies, potentially leading to improved battery life and signal quality in next-gen mobile devices.
The use of Tower's 300mm RFSOI technology enables higher integration and smaller chip sizes, important for modern mobile designs. The incorporation of power amplifiers (PAs) directly into the RFSOI platform is particularly noteworthy, as it reduces signal loss and enhances overall efficiency. This could translate to better coverage and faster data rates for end-users, positioning both companies at the forefront of Wi-Fi 7 technology.
This partnership between Tower Semiconductor and Broadcom has significant market implications. Wi-Fi 7 is poised to be a major driver in the next wave of mobile connectivity and early leadership in this space could translate to substantial market share gains. The mobile RF front-end market is highly competitive, with players like Qualcomm and Qorvo vying for dominance.
Tower's success in producing these advanced FEMs could attract more high-profile customers, potentially boosting its revenue and market position in the foundry space. For Broadcom, this collaboration strengthens its portfolio in the lucrative mobile Wi-Fi chip market. As 5G and Wi-Fi 7 adoption accelerates, we can expect increased demand for these high-performance, integrated solutions, potentially driving growth for both companies in the coming years.
Leading-Edge Wi-Fi 7 RF FEMs based on Tower’s Advanced 300mm RFSOI Technology Deliver Enhanced Mobile Connectivity Performance and Efficiency
MIGDAL HAEMEK, Israel, Sept 10, 2024 – Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, today announced the production of Wi-Fi 7 RF front-end module (FEM) devices based on its advanced 300mm RFSOI technology. Partnering with Broadcom Inc. (NASDAQ: AVGO), Tower has enabled fully integrated Wi-Fi FEM devices on a single RFSOI die. This innovative solution delivers superior performance and efficiency compared to existing non-SOI technologies, setting a new standard in the market for advanced mobile applications.
“The unique advantages of Tower’s RFSOI technology have enabled Broadcom to design and bring to market a set of compact, high-performance FEMs for Wi-Fi 7 mobile applications," said Vijay Nagarajan, vice president of Marketing, Wireless Communications and Connectivity, Broadcom. "These FEMs - a product of our long-standing partnership with Tower - are tailored to meet the stringent size and power efficiency requirements for mobile Wi-Fi applications."
"We are thrilled to collaborate with a market leader like Broadcom, extending Tower’s leading RFSOI platform to enable innovative architectural options for integrated front-end module designs, including unique devices for LNAs and power amplifiers, and high gate density standard cells for size reduction in logic area,” said Dr. Marco Racanelli, President, Tower Semiconductor. “Broadcom’s premier capabilities in RF FEM product design complement our technological strengths, allowing both companies to achieve unprecedented performance and integration. This partnership underscores our dedication to aligning roadmaps with our customers and advancing groundbreaking products, reinforcing Tower's commitment to delivering superior technology and manufacturing solutions, enabling customers’ success."
This highly integrated process reduces chip area despite the complexity of having to support new features and frequency bands. Tower’s RFSOI technology platform delivers best-in-class silicon-based switch and LNA performance, as evidenced by its widespread adoption. Integrating a PA device into this technology eliminates the additional signal loss of propagating signals between separate dies, while the high-resistivity SOI substrate enhances PA efficiency by supporting passive elements like inductors with a higher quality factor.
For additional information on Tower’s RF & HPA technology platform, please visit here.
About Tower Semiconductor
Tower Semiconductor Ltd. (NASDAQ/TASE: TSEM), the leading foundry of high-value analog semiconductor solutions, provides technology, development, and process platforms for its customers in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor focuses on creating a positive and sustainable impact on the world through long-term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, displays, integrated power management (BCD and 700V), photonics, and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as process transfer services including development, transfer, and optimization, to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor owns two facilities in Israel (150mm and 200mm), two in the U.S. (200mm), two in Japan (200mm and 300mm) which it owns through its
Tower Semiconductor Investor Relations Contact: Noit Levy | +972-4-604-7066 | noitle@towersemi.com
Tower Semiconductor Company Contact: Orit Shahar | +972-74-7377440 | oritsha@towersemi.com
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