Tower Semiconductor and pSemi Win the Prestigious Industry Paper Competition Award at IMS 2025
Tower Semiconductor (NASDAQ/TASE: TSEM) and pSemi have won the Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS) for their groundbreaking paper on RF switch technology. The award-winning research showcases Tower's PCM RF switch technology, which achieved unprecedented performance metrics including DC-110 GHz bandwidth, less than 2 dB insertion loss, and 30 dBm power handling.
The innovation demonstrates 15-20 dB improvement in linearity compared to RFSOI CMOS solutions, positioning Tower at the forefront of RF front-end technology development for 5G, future 6G, SatCom, and millimeter-wave applications.
Tower Semiconductor (NASDAQ/TASE: TSEM) e pSemi hanno vinto il premio Industry Paper Competition all'IEEE International Microwave Symposium (IMS) 2025 per il loro innovativo studio sulla tecnologia degli switch RF. La ricerca premiata presenta la tecnologia PCM RF switch di Tower, che ha raggiunto prestazioni senza precedenti, tra cui una banda passante da DC a 110 GHz, una perdita di inserzione inferiore a 2 dB e una gestione di potenza di 30 dBm.
L'innovazione dimostra un miglioramento di 15-20 dB nella linearità rispetto alle soluzioni RFSOI CMOS, posizionando Tower all'avanguardia nello sviluppo della tecnologia RF front-end per 5G, futuro 6G, SatCom e applicazioni a onde millimetriche.
Tower Semiconductor (NASDAQ/TASE: TSEM) y pSemi han ganado el Premio a la Competencia de Artículos Industriales en el IEEE International Microwave Symposium (IMS) 2025 por su innovador trabajo sobre tecnología de interruptores RF. La investigación premiada presenta la tecnología de interruptores RF PCM de Tower, que alcanzó métricas de rendimiento sin precedentes, incluyendo ancho de banda de DC a 110 GHz, menos de 2 dB de pérdida de inserción y manejo de potencia de 30 dBm.
La innovación demuestra una mejora de 15-20 dB en linealidad en comparación con las soluciones RFSOI CMOS, posicionando a Tower a la vanguardia en el desarrollo de tecnología de front-end RF para 5G, futuro 6G, SatCom y aplicaciones de ondas milimétricas.
Tower Semiconductor (NASDAQ/TASE: TSEM)와 pSemi가 2025년 IEEE 국제 마이크로웨이브 심포지엄(IMS)에서 RF 스위치 기술에 관한 획기적인 논문으로 산업 논문 경진대회 상을 수상했습니다. 수상 연구는 Tower의 PCM RF 스위치 기술을 선보였으며, DC-110 GHz 대역폭, 2 dB 미만의 삽입 손실, 30 dBm 전력 처리 등 전례 없는 성능 지표를 달성했습니다.
이 혁신은 RFSOI CMOS 솔루션 대비 15-20 dB의 선형성 향상을 보여주며, Tower를 5G, 미래 6G, 위성통신(SatCom), 밀리미터파 응용 분야의 RF 프론트엔드 기술 개발 최전선에 위치시킵니다.
Tower Semiconductor (NASDAQ/TASE : TSEM) et pSemi ont remporté le prix Industry Paper Competition lors du IEEE International Microwave Symposium (IMS) 2025 pour leur article révolutionnaire sur la technologie des commutateurs RF. La recherche primée met en avant la technologie de commutateurs RF PCM de Tower, qui a atteint des performances inédites, notamment une large bande passante de DC à 110 GHz, une perte d'insertion inférieure à 2 dB et une gestion de puissance de 30 dBm.
Cette innovation démontre une amélioration de 15-20 dB en linéarité par rapport aux solutions RFSOI CMOS, positionnant Tower à la pointe du développement des technologies frontales RF pour la 5G, la future 6G, SatCom et les applications ondes millimétriques.
Tower Semiconductor (NASDAQ/TASE: TSEM) und pSemi haben den Industry Paper Competition Award auf dem IEEE International Microwave Symposium (IMS) 2025 für ihre bahnbrechende Arbeit zur RF-Schaltertechnologie gewonnen. Die preisgekrönte Forschung präsentiert die PCM RF-Schaltertechnologie von Tower, die beispiellose Leistungswerte erreichte, darunter DC-110 GHz Bandbreite, weniger als 2 dB Einfügedämpfung und 30 dBm Leistungsaufnahme.
Die Innovation zeigt eine 15-20 dB Verbesserung der Linearität im Vergleich zu RFSOI-CMOS-Lösungen und positioniert Tower an der Spitze der Entwicklung von RF-Frontend-Technologien für 5G, zukünftiges 6G, SatCom und Millimeterwellenanwendungen.
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Award-winning paper showcases breakthroughs in wideband RF switch performance, reinforcing Tower’s leadership in advanced RF front-end innovation
MIGDAL HAEMEK, Israel — July 08, 2025 — Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, today announced receipt of the Industry Paper Competition Award at the 2025 IEEE International Microwave Symposium (IMS) for their co-authored paper with pSemi — “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers”. The paper was presented on June 19, 2025, during IMS’s session on Innovative RF Switches, Varactor and Modulator Technologies, and won the Best Paper Award in its category.
The award recognizes Tower’s PCM RF switch as a significant innovation and advancement in RF switch technology, capable of delivering a record-breaking combination of bandwidth (DC–110 GHz), insertion loss (<2 dB), power handling (30 dBm), and linearity (+15–20 dB improvement over RFSOI CMOS solutions) — results that have not been achieved by any other RF switch technology. Enabled by Tower’s proprietary BEOL integration and integrated digital control, this combination of ultra-low-loss wideband performance, power handling, and full CMOS integration simplifies implementation for end users and enables advanced circuits for 5G, future 6G, SatCom, beamforming, and millimeter-wave applications.
“We’re honored to receive this recognition,” said Dr. Ed Preisler, Vice President and General Manager of the RF Business Unit. “This achievement reinforces our commitment to advancing RF front-end integration for the next wave of wireless devices and highlights the power of strategic partnerships like ours with pSemi.”
"We are honored to be recognized by IMS alongside Tower Semiconductor," said Rodd Novak, Vice President, Sales and Marketing, pSemi. "This award reflects our team's dedication to pushing the boundaries of wideband RF switch research and design."
For additional information about the Company’s RF platform offering, visit here.
About Tower Semiconductor
Tower Semiconductor Ltd. (NASDAQ/TASE: TSEM), the leading foundry of high-value analog semiconductor solutions, provides technology, development, and process platforms for its customers in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor focuses on creating a positive and sustainable impact on the world through long-term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, displays, integrated power management (BCD and 700V), photonics, and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as process transfer services including development, transfer, and optimization, to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor owns one operating facility in Israel (200mm), two in the U.S. (200mm), two in Japan (200mm and 300mm) which it owns through its
Safe Harbor Regarding Forward-Looking Statements
This press release includes forward-looking statements, which are subject to risks and uncertainties. Actual results may vary from those projected or implied by such forward-looking statements. A complete discussion of risks and uncertainties that may affect the accuracy of forward-looking statements included in this press release or which may otherwise affect Tower’s business is included under the heading “Risk Factors” in Tower’s most recent filings on Forms 20-F, F-3, F-4 and 6-K, as were filed with the Securities and Exchange Commission (the “SEC”) and the Israel Securities Authority. Tower does not intend to update, and expressly disclaim any obligation to update, the information contained in this release.
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Tower Semiconductor Company Contact: Orit Shahar | +972-74-7377440 | oritsha@towersemi.com
Tower Semiconductor Investor Relations Contact: Liat Avraham | +972-4-6506154 | liatavra@towersemi.com
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