Toyoda Gosei Succeeds in Making Larger GaN Substrates for Next-Generation Power Devices

Rhea-AI Summary

Toyoda Gosei Co., Ltd. and Osaka University have successfully developed a method to produce over 6-inch gallium nitride (GaN) substrates, the largest in the world. This innovation, funded by the Japanese Ministry of the Environment, aims to enhance the efficiency of GaN power devices used in various industries and support carbon neutrality efforts. By utilizing the sodium flux method for crystal growth, the collaboration seeks to improve substrate quality for mass production, thereby reducing power loss in renewable energy solutions and electric vehicles.

Positive

• Successful development of >6-inch GaN substrates enhancing productivity.
• Supports carbon neutrality efforts through reduced power loss.
• Collaboration with Osaka University and Japanese Ministry of the Environment.

Negative

• None.

New technology will contribute to an energy-saving society

KIYOSU, Japan--(BUSINESS WIRE)-- Toyoda Gosei Co., Ltd. (TOKYO: 7282), together with Osaka University, has succeeded in increasing the diameter of substrates for gallium nitride (GaN) power devices¹.

>6 inch GaN substrate (GaN seed crystal) (Graphic: Business Wire)

Power devices are widely used for power control in industrial machinery, automobiles, home electronics and more. As society moves toward carbon neutrality, the practical application and widespread use of next-generation power devices is promising as a means of reducing power loss when controlling large volumes of power in renewable energy equipment and electric vehicles. GaN power devices are one means for doing this, and higher quality and larger diameter GaN substrates are needed in the development of these devices to achieve higher productivity (cost reductions).

In a project headed by the Japanese Ministry of the Environment,² Toyoda Gosei and Osaka University have employed a method of growing GaN crystals in liquid metal of sodium and gallium (sodium flux method) to fabricate a high quality GaN substrate (GaN seed crystal) of over 6 inches, the world’s largest level. They will next conduct quality assessments for mass production of 6-inch substrates, and continue improving quality and increasing diameter size (more than 6 inches).

¹ Toyoda Gosei is leveraging its expertise in GaN semiconductors (blue LEDs and UV-C LEDs) in developing next-generation power devices.

² The technology innovation project to create future societies and lifestyles; this is a large project that includes verification of CO₂ reductions from social implementation of applied products based on the development of GaN substrates.

View source version on businesswire.com: https://www.businesswire.com/news/home/20220314005004/en/

Toyoda Gosei Co., Ltd.

Public Relations

Chihiro Suzuki

inquiry@mail.toyoda-gosei.co.jp

Source: Toyoda Gosei Co., Ltd.

FAQ

What is Toyoda Gosei's recent innovation in GaN technology?

Toyoda Gosei has developed a method to produce over 6-inch gallium nitride (GaN) substrates, the largest worldwide, to improve power device efficiency.

How does Toyoda Gosei's GaN substrate development contribute to carbon neutrality?

The innovation is aimed at reducing power loss in renewable energy systems and electric vehicles, aiding in the pursuit of carbon neutrality.

When did Toyoda Gosei announce its GaN substrate development?

The announcement was made in a press release dated March 14, 2022.

What is the significance of the >6-inch GaN substrates?

These substrates are crucial for improving the quality and productivity of GaN power devices, which are key for industrial and renewable energy applications.

Who funded the collaboration between Toyoda Gosei and Osaka University?

The project is supported by the Japanese Ministry of the Environment.