Teledyne e2v HiRel Partners with Integra Technologies Inc. to Launch 100V GaN/SiC RF Power Technology for High Reliability Aerospace & Defense Applications
Teledyne e2v HiRel Electronics has announced the introduction of High Reliability qualified 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors developed by Integra Technologies. The new IGN1011S3600 model can deliver 3.6 kW at frequencies of 1,030 and 1,090 MHz, with greater than 19 dB of gain and efficiency up to 75%. This advancement aims to meet the increasing demand for higher power density RF devices, particularly for military and space applications. Further screening and qualifications will ensure operational longevity in harsh environments.
- Introduction of High Reliability qualified 100V GaN/SiC power transistors from Integra Technologies.
- The new IGN1011S3600 model delivers 3.6 kW at 1,030 and 1,090 MHz with over 19 dB gain.
- Efficiency of up to 75% improves system functionality while reducing the need for complicated circuitry.
- Targeted for military and new space applications, enhancing market position.
- None.
Teledyne e2v HiRel Electronics, a leading provider of high reliability semiconductor solutions, today announced that it will be offering High Reliability qualified versions of California-based Integra Technologies, Inc. (Integra) new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors.
Teledyne e2v HiRel 100V RF GaN on SiC Power Transistor (Photo: Business Wire)
Integra’s newly announced 100V RF GaN/SiC gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50V and 65V GaN technologies. Teledyne will qualify Integra’s first 100V product, the IGN1011S3600, which offers 3.6 kW at 1,030 and 1,090 MHz, greater than 19 dB of gain and up to
“Our most demanding customers are requesting higher power density RF power devices,” said Brad Little, VP and General Manager of Teledyne e2v HiRel. “Adding additional screening and qualifications for the new devices will assure long operational life in even the harshest environments.”
FEATURES
- GaN/SiC HEMT Technology
- Ideal for L-band Avionics IFF & SSR Systems
- Operation at 1,030 and 1,090 MHz
- Output Power >3600 W
- Pre-matched Input Impedance
-
High Efficiency - up to
75% during the RF pulse -
100% RF Tested - RoHS and REACH Compliant
ABOUT TELEDYNE E2V HIREL ELECTRONICS
Teledyne e2v HiRel innovations lead developments in space, transportation, defense, and industrial markets. Teledyne e2v’s unique approach involves listening to the market and to the application challenges of customers and partnering with our customers to provide innovative standard, semi-custom or fully custom solutions, bringing increased value to their systems. Teledyne e2v HiRel Electronics is part of the Teledyne Defense Electronics Group. www.tdehirel.com
ABOUT INTEGRA TECHNOLOGIES, INC.
Founded in 1997, Integra is a leading innovator of RF and Microwave high power semiconductor and pallet solutions for mission-critical applications, including state-of-the-art radar, electronic warfare, and advanced communications systems. www.integratech.com.
View source version on businesswire.com: https://www.businesswire.com/news/home/20210714005120/en/
FAQ
What is the new product announced by Teledyne e2v?
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