Renesas Unveils New-Generation Si IGBTs for Electric Vehicle Inverters

Rhea-AI Summary

Renesas Electronics Corporation (TSE: 6723) has unveiled a new generation of Si-IGBTs designed for electric vehicle inverters, expected to begin mass production in the first half of 2023. The AE5-generation IGBTs will reduce power losses by 10% compared to predecessor models, while being 10% smaller. Production will also ramp up in Kofu, Japan, to meet the increasing demand for power semiconductor products. These advancements aim to enhance EV efficiency and driving range, providing engineers with greater design flexibility.

Positive

• 10% reduction in power losses compared to AE4 products.
• New IGBTs support higher current density and have a more compact size.
• Improved performance and safety features for parallel operation.
• Expected to enhance the driving range of EVs.

Negative

• None.

New Power Product to Be Manufactured at Renesas’ Newly Established 300mm Kofu Factory

TOKYO--(BUSINESS WIRE)-- Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, announced the development of a new generation of Si-IGBTs (Silicon Insulated Gate Bipolar Transistors) which will be offered in a small footprint while providing low power losses. Aimed at next generation electric vehicle (EVs) inverters, AE5-generation IGBTs will be mass produced starting in the first half of 2023 on Renesas’ 200- and 300-mm wafer lines at the company’s factory in Naka, Japan. Additionally, Renesas will ramp up production starting in the first half of 2024 at its new power semiconductor 300-mm wafer fab in Kofu, Japan to meet the growing demand for power semiconductor products.

(Graphic: Business Wire)

The silicon based AE5 process for IGBTs achieve a 10% reduction in power losses compared to the current-generation AE4 products, a power savings that will help EV developers save battery power and increase driving range. In addition, the new products are approximately 10% smaller while maintaining high robustness. The new Renesas devices achieve the industry’s highest level of performance for IGBTs by optimally balancing low power loss and robustness trade offs. Moreover, the new IGBTs significantly improve performance and safety as modules by minimizing parameter variations among the IGBTs and providing stability when operating IGBTs in parallel. These features provide engineers greater flexibility to design smaller inverters that achieve high performance.

“Demand for automotive power semiconductors is rapidly growing, as EVs become more widely available," said Katsuya Konishi, Vice President of Renesas' Power System Business Division. “Renesas' IGBTs provide highly reliable, robust power solutions that build on our experience in manufacturing automotive-grade power products for the last seven years. With the latest devices soon to be in mass production, we are providing optimal features and cost performance for mid-range EV inverters that are expected to grow rapidly in the future."

Key Features of the New-Generation IGBTs (AE5)

• Four products targeting 400-800V inverters: 750V withstand voltage (220A and 300A) and 1200V withstand voltage (150A and 200A)
• Steady performance throughout the operating junction temperature (Tj) range from -40°C to 175°C
• Industry's highest performance level with an on-voltage Vce (saturation voltage) of 1.3V, a key value for minimizing power loss
• 10% higher current density compared to conventional products and small chip size (100mm²/300A) optimized for low power losses and high input resistance
• Stable parallel operation by reducing parameter variations to VGE(off) to ±0.5V
• Maintains reverse bias safe operating area (RBSOA) with a maximum Ic current pulse of 600A at 175°C junction temperatures, and a highly robust short circuit withstand time of 4µs at 400V.
• 50% reduction in the temperature dependence of gate resistance (Rg). This minimizes switching losses at high temperatures, spike voltage at low temperatures and short circuit withstand time, supporting high performance designs.
• Available as a bare die (wafer)
• Enables a reduction in inverter power losses, improving power efficiency by up to 6% compared to the current AE4 process at the same current density, allowing EVs to drive longer distances and use fewer batteries.

Inverter Solution for EVs
In EVs, the motors that power vehicles are controlled by inverters. Switching devices such as IGBTs are critical in minimizing power consumption for EVs, as inverters convert DC power to the AC power that electric vehicle motors require. To assist developers, Renesas offers the xEV Inverter Reference Solution, a working hardware reference design that combines an IGBT, microcontroller, power management IC (PMIC), gate driver IC, and fast recovery diode (FRD). Renesas also offers the xEV Inverter Kit, which is a hardware implementation of the reference design. In addition, Renesas provides a motor parameter calibration tool and the xEV Inverter Application Model and Software, which combines an application model and sample software for controlling the motor. These tools and support programs from Renesas are designed to help customers simplify their software development efforts. Renesas plans to add the new-generation IGBTs to these hardware and software development kits to enable even better power efficiency and performance in a smaller footprint.

Availability
Samples of the 750-withstand voltage version with 300A are available from Renesas today. Additional versions are planned for future release. More information about the new IGBTs can be found here: https://www.renesas.com/products/automotive-products/automotive-power-devices/automotive-igbt-0.

A blog article about the new product is also available on the website: The next generation IGBT/AE5 offers high efficiency and ease of use.

About Renesas Electronics Corporation
Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, Twitter, YouTube and Instagram.

(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.

View source version on businesswire.com: https://www.businesswire.com/news/home/20220830005283/en/

Media Contacts:

Americas

Akiko Ishiyama

Renesas Electronics Corporation

+ 1-408-887-9006

akiko.ishiyama.xf@renesas.com

Source: Renesas Electronics Corporation

FAQ

What is Renesas' new product related to?

Renesas has announced a new generation of Si-IGBTs designed for electric vehicle inverters.

When will mass production of the new IGBTs start?

Mass production of the new IGBTs is expected to begin in the first half of 2023.

How much reduction in power loss do the new IGBTs provide?

The new AE5-generation IGBTs provide a 10% reduction in power losses compared to the current-generation AE4 products.

What advantages do the new IGBTs offer for electric vehicles?

The new IGBTs are smaller and more efficient, significantly improving power efficiency and enhancing the driving range of EVs.

Where will the new IGBTs be manufactured?

The new IGBTs will be manufactured at Renesas’ factory in Naka, Japan, and will also ramp up production at the new 300-mm wafer fab in Kofu, Japan.