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Navitas Semiconductor Corp (NVTS) drives innovation in next-generation power electronics through its GaN and SiC semiconductor solutions. This news hub provides investors and industry professionals with essential updates on technological breakthroughs, strategic partnerships, and market developments.
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Navitas Semiconductor (NASDAQ:NVTS), a leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in several key investor events throughout August 2025.
The company will host its own 'Electrify Events' series focused on 'Powering Next-Generation AI Data Centers' on August 8, featuring discussions on data center architectures and power technologies. Additionally, NVTS management will participate in four major industry conferences: the Needham Virtual Semiconductor Conference (Aug 20), Evercore Semiconductor Conference (Aug 26), Jefferies Technology Conference (Aug 27), and Deutsche Bank Technology Conference (Aug 28).
[]Navitas Semiconductor (Nasdaq: NVTS) reported Q2 2025 financial results with revenue of $14.5 million, down from $20.5 million in Q2 2024. The company announced a strategic shift focusing on AI data centers and energy infrastructure, supported by a collaboration with NVIDIA and a $100 million capital raise through the sale of 20 million common shares.
Key developments include a new partnership with Powerchip for 8" GaN manufacturing, targeting lower costs and increased capacity. The company estimates a $2.6B market potential by 2030 for GaN and SiC technologies in AI data centers. For Q3 2025, Navitas expects revenues of $10.0 million ±$0.5 million with a non-GAAP gross margin of 38.5% ±50 basis points.
Navitas Semiconductor (Nasdaq: NVTS) announced that its GaNSense Control ICs will power Xiaomi's next-generation 90W GaN charger. The ultra-compact charger sets new industry standards, measuring just 34 × 45 × 34 mm and weighing only 65 grams - approximately half the size and a third the weight of typical GaN chargers.
The charger incorporates Navitas' NV9580 GaNSense Control power IC and NV9701 synchronous rectification controller IC, combining 4th generation GaN power with high-frequency control functionality. The technology delivers enhanced efficiency, reduced component count, and superior voltage breakdown protection up to 800V.
Navitas Semiconductor (Nasdaq: NVTS) has scheduled its Q2 2025 financial results announcement for Monday, August 4th, 2025, after market close. The company will host a conference call and webcast at 2:00 PM Pacific / 5:00 PM Eastern to discuss the results.
Investors and analysts can join via toll-free numbers (888) 596-4144 or (646) 968-2525 using Conference ID 8274952. A live webcast will be available, and a replay can be accessed through the company's Investor Relations website.
Navitas Semiconductor (NASDAQ:NVTS), a leading pure-play next-generation power semiconductor company specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announced its participation in the upcoming CJS Securities 25th Annual "New Ideas" Summer Conference.
CEO Gene Sheridan will deliver a presentation on July 10th, 2025, from 10:00 to 10:45 ET and participate in one-on-one meetings at the Metropolis Country Club in White Plains, NY. Interested parties can request registration by contacting info@cjs-securities.com.
Navitas Semiconductor (Nasdaq: NVTS) has announced a strategic partnership with Powerchip Semiconductor Manufacturing Corporation (PSMC) to initiate production and continue development of 200mm GaN-on-silicon technology. The production will take place at Powerchip's Fab 8B facility in Zhunan Science Park, Taiwan, utilizing an improved 180nm CMOS process.
The partnership will manufacture Navitas' GaN portfolio with voltage ratings from 100V to 650V, targeting growing demand in 48V infrastructure, AI data centers, and EVs. Initial device qualification is expected in Q4 2025, with 100V family production starting in 1H26. The 650V devices will transition from TSMC to Powerchip over the next 12-24 months.
This collaboration follows Navitas' recent partnerships with NVIDIA for 800V HVDC architectures, Enphase for next-generation IQ9 with GaNFast ICs, and Changan Automobile for GaN-based on-board chargers.
[ "Partnership enables improved manufacturing capabilities with advanced 180nm CMOS process", "Expected improvements in performance, power efficiency, integration, and cost", "Expansion of production capacity through additional manufacturing partner", "Strategic positioning for growing markets including AI data centers, EVs, and solar", "Recent partnerships secured with major companies (NVIDIA, Enphase, Changan)" ]Navitas Semiconductor (Nasdaq: NVTS) has received the 'Outstanding Technical Collaboration Award' from VREMT Energy, a Geely subsidiary. The companies established a joint R&D Laboratory to advance EV power-system development using Navitas' GaNFast and GeneSiC semiconductor technologies.
Key achievements include the introduction of the industry's first automotive 'AEC-Plus' qualified SiC MOSFETs in HV-T2PaK package and automotive-grade GaNSafe ICs with AEC-Q100 and AEC-Q101 qualifications. These technologies enable improved efficiency, weight, and size for EV components, supporting major automotive OEMs including Volvo, ZEEKR, and SMART.