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Navitas Semiconductor Corporation (Nasdaq: NVTS) is a leading innovator in the power semiconductor industry, headquartered in El Segundo, California. The company is renowned for its groundbreaking introduction of the world’s first and fastest AllGaN™ power ICs, which revolutionize high-frequency, high-efficiency, and high-density power electronics. These GaNFast™ power ICs integrate gallium nitride (GaN) power with drive, control, and protection mechanisms, enabling faster charging, higher power density, and significant energy savings across various markets including mobile, consumer, enterprise, eMobility, and new energy.
Formed in 2014, Navitas leverages over 150 years of combined expertise in power semiconductors and holds more than 250 patents. The company’s patented GaN technology spans core device, circuit, packaging, and system technologies, further reinforced by extensive trade secrets, access to over $100 million of R&D equipment, and ongoing collaboration with the Hughes Research Lab (HRL).
Navitas operates globally across key markets such as China, Europe, the United States, and other parts of Asia. A significant portion of its revenue is generated from China. The company focuses on creating ultra-efficient GaN semiconductors that replace legacy silicon power chips, delivering superior high-frequency and high-efficiency characteristics. This shift is pivotal in the fast adoption of electric vehicles (EVs), the transition to renewable energy sources, and advancements in data center technologies.
Recent achievements include the establishment of a joint lab with SHINRY in Shenzhen. This collaboration promises to accelerate the development of advanced battery-electric and fuel-cell vehicle power platforms, leveraging Navitas' leading-edge GaN technology. Furthermore, Navitas has introduced a 3.2kW data center power platform and plans to develop even more powerful systems to meet the escalating demands of AI data centers.
Financially, Navitas concluded 2023 with record revenue growth, doubling its annual revenue. The company’s robust customer pipeline includes significant new wins in AI data centers, home appliances, solar inverters, and satellite internet projects, positioning it well for continued growth in 2024 and beyond. For the first quarter of 2024, the company projects net revenues of $23 million and maintains a focus on expanding its footprint in various high-growth markets.
Navitas prides itself on sustainability, being the first semiconductor company to be CarbonNeutral®-certified. The company’s product range includes complementary GeneSiC™ power devices optimized for high-power, high-voltage, and high-reliability applications. With a dedication to innovation and a strong commitment to environmental responsibility, Navitas continues to push the boundaries of power semiconductor technology.
Navitas Semiconductor (Nasdaq: NVTS), a leading power semiconductor company specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in an upcoming CICC investor call. The event is scheduled for Wednesday, December 11th at 6pm US Pacific time (9pm US Eastern, December 12th at 10am Beijing/Shanghai/Hong Kong time).
The group call will feature presentations from Gene Sheridan (CEO), Todd Glickman (CFO), and Charles Zha (VP, GM Navitas China). Interested participants can register by contacting Carla Lai at the CICC Research Department.
Navitas Semiconductor (NVTS) will showcase breakthrough technologies at CES 2025 in Las Vegas, focusing on AI data centers, EVs, and mobile applications. The company will present several innovations including the world's only 650V bi-directional GaNFast power ICs, an 8.5 kW AI data center power supply achieving 98% efficiency, and the highest power density AI power supply at 137 W/in3.
Key highlights include automotive-qualified Gen-3 Fast SiC MOSFETs, GaNSlim integrated solutions for mobile devices, and SiCPAK high-power modules for EV charging. The company's technologies aim to advance the transition from legacy silicon to next-generation GaN and SiC power semiconductors, potentially saving over 6,000 megatons of CO2 per year by 2050.
Navitas Semiconductor (NVTS) has appointed Dr. Ranbir Singh to its board of directors. Dr. Singh, formerly Executive Vice President at Navitas and founder/CEO of GeneSiC Semiconductor, brings over 20 years of Silicon Carbide (SiC) innovation experience, including 8 years at Wolfspeed. As a recognized leader in power electronics, he holds numerous accolades, including over 200 published papers and 40 US patents.
Dr. Singh joined Navitas through the GeneSiC acquisition, which he founded in 2004. He holds degrees from the Indian Institute of Technology and North Carolina State University, where he was inducted into the ECE Alumni Hall of Fame in 2022. His appointment strengthens Navitas' position in next-generation power semiconductors, particularly in GaN power ICs and SiC technology.
Navitas Semiconductor (NVTS), a leader in next-generation power semiconductors specializing in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, announces participation in two upcoming investor events. The company will join the MESH Ventures Investor Call on December 2nd, 2024, featuring CEO Gene Sheridan and CFO Todd Glickman. Additionally, Navitas will attend the Needham 27th Annual Growth Conference on January 14-15th, 2025, in New York, which includes one-on-one meetings and a fireside chat hosted by Senior Analyst Quinn Bolton.
Navitas Semiconductor (NVTS) has been recognized in Deloitte's Technology Fast 500™ for the third consecutive year, achieving 571% revenue growth from 2020 to 2023. The growth was driven by strong demand for their advanced gallium nitride (GaN) and silicon carbide (SiC) power components across multiple markets. The company is expanding its presence in mobile fast chargers, AI data centers, and EV markets, with new product introductions including GaNSafe™, Gen-3 'Fast' SiC, and a 48V-focused range in partnership with Infineon. These innovations target applications from 20W to 20MW, addressing a market opportunity exceeding $22B annually.
Navitas Semiconductor (Nasdaq: NVTS), a leading company in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in the 13th Annual Roth Technology Conference. The event will take place on November 19th & 20th, 2025, at the Hard Rock Hotel in New York. Todd Glickman, CFO, and Stephen Oliver, VP Investor Relations, will be available for one-on-one meetings with investors. Interested parties can arrange meetings through Roth Capital Partners.
Navitas Semiconductor (NVTS) has unveiled the world's first 8.5 kW power supply unit (PSU) for AI and hyperscale data centers, achieving 98% efficiency through combined GaN and SiC technologies. The PSU features high-power GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved PFC and topologies, reducing component count by 25% compared to competitors. The unit operates at 180-264 Vac input, provides 54V output, and maintains a temperature range of -5°C to 45°C. The innovative design addresses power demands for next-generation AI servers, particularly those running NVIDIA's Blackwell GPUs, as currently 95% of data centers lack adequate power support.
Navitas Semiconductor (NVTS) reported Q3 2024 revenue of $21.7 million, slightly down from $22.0 million in Q3 2023. The company announced record sales in GaN mobile fast-chargers and introduced a new low-voltage GaN platform for 48V AI data centers, EV, and robotics markets. A strategic partnership with Infineon Technologies was established for customer dual sourcing. The company implemented a cost-reduction plan expected to save $2 million per quarter, including a 14% workforce reduction. Q4 2024 revenue guidance is set at $18.0-20.0 million with an expected non-GAAP gross margin of 40% ±50bps.
Navitas Semiconductor (Nasdaq: NVTS) will showcase groundbreaking power semiconductor innovations at CPEEC & CPSSC 2024 in Xi'an. The company will present the world's first 8.5 kW OCP AI data center power supply using GaNSafe and Gen-3 Fast SiC MOSFETs, alongside the highest power density 4.5 kW AI data center power supply. Their 'IntelliWeave' patented digital control achieves PFC peak efficiencies of 99.3% and reduces power losses by 30%. The company will also display a 6.6kW 2-in-1 EV on-board charger and introduce the new GaNSlim family for applications up to 500W, featuring autonomous EMI control and loss-less sensing.
Navitas Semiconductor (NVTS) announces groundbreaking developments in GaN and SiC technologies to be showcased at electronica 2024. The highlight is the world's first 8.5 kW power supply for AI data centers, utilizing GaNSafe power ICs and Gen-3 Fast SiC MOSFETs. The Gen-3 Fast GeneSiC MOSFETs deliver up to 25°C lower case temperature and 3x longer life compared to competitors. The company will also display GaNSense Motor Drives ICs, 650V bi-directional GaN demonstrator, and SiCPAK modules for various high-power applications. According to Yole Group, GaN and SiC products are expected to capture 30% of the power semiconductor market by 2027.
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