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Navitas Semiconductor Corporation (Nasdaq: NVTS) is a leading innovator in the power semiconductor industry, headquartered in El Segundo, California. The company is renowned for its groundbreaking introduction of the world’s first and fastest AllGaN™ power ICs, which revolutionize high-frequency, high-efficiency, and high-density power electronics. These GaNFast™ power ICs integrate gallium nitride (GaN) power with drive, control, and protection mechanisms, enabling faster charging, higher power density, and significant energy savings across various markets including mobile, consumer, enterprise, eMobility, and new energy.
Formed in 2014, Navitas leverages over 150 years of combined expertise in power semiconductors and holds more than 250 patents. The company’s patented GaN technology spans core device, circuit, packaging, and system technologies, further reinforced by extensive trade secrets, access to over $100 million of R&D equipment, and ongoing collaboration with the Hughes Research Lab (HRL).
Navitas operates globally across key markets such as China, Europe, the United States, and other parts of Asia. A significant portion of its revenue is generated from China. The company focuses on creating ultra-efficient GaN semiconductors that replace legacy silicon power chips, delivering superior high-frequency and high-efficiency characteristics. This shift is pivotal in the fast adoption of electric vehicles (EVs), the transition to renewable energy sources, and advancements in data center technologies.
Recent achievements include the establishment of a joint lab with SHINRY in Shenzhen. This collaboration promises to accelerate the development of advanced battery-electric and fuel-cell vehicle power platforms, leveraging Navitas' leading-edge GaN technology. Furthermore, Navitas has introduced a 3.2kW data center power platform and plans to develop even more powerful systems to meet the escalating demands of AI data centers.
Financially, Navitas concluded 2023 with record revenue growth, doubling its annual revenue. The company’s robust customer pipeline includes significant new wins in AI data centers, home appliances, solar inverters, and satellite internet projects, positioning it well for continued growth in 2024 and beyond. For the first quarter of 2024, the company projects net revenues of $23 million and maintains a focus on expanding its footprint in various high-growth markets.
Navitas prides itself on sustainability, being the first semiconductor company to be CarbonNeutral®-certified. The company’s product range includes complementary GeneSiC™ power devices optimized for high-power, high-voltage, and high-reliability applications. With a dedication to innovation and a strong commitment to environmental responsibility, Navitas continues to push the boundaries of power semiconductor technology.
Navitas Semiconductor (Nasdaq: NVTS), a leading company in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its participation in the 13th Annual Roth Technology Conference. The event will take place on November 19th & 20th, 2025, at the Hard Rock Hotel in New York. Todd Glickman, CFO, and Stephen Oliver, VP Investor Relations, will be available for one-on-one meetings with investors. Interested parties can arrange meetings through Roth Capital Partners.
Navitas Semiconductor (NVTS) has unveiled the world's first 8.5 kW power supply unit (PSU) for AI and hyperscale data centers, achieving 98% efficiency through combined GaN and SiC technologies. The PSU features high-power GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved PFC and topologies, reducing component count by 25% compared to competitors. The unit operates at 180-264 Vac input, provides 54V output, and maintains a temperature range of -5°C to 45°C. The innovative design addresses power demands for next-generation AI servers, particularly those running NVIDIA's Blackwell GPUs, as currently 95% of data centers lack adequate power support.
Navitas Semiconductor (NVTS) reported Q3 2024 revenue of $21.7 million, slightly down from $22.0 million in Q3 2023. The company announced record sales in GaN mobile fast-chargers and introduced a new low-voltage GaN platform for 48V AI data centers, EV, and robotics markets. A strategic partnership with Infineon Technologies was established for customer dual sourcing. The company implemented a cost-reduction plan expected to save $2 million per quarter, including a 14% workforce reduction. Q4 2024 revenue guidance is set at $18.0-20.0 million with an expected non-GAAP gross margin of 40% ±50bps.
Navitas Semiconductor (Nasdaq: NVTS) will showcase groundbreaking power semiconductor innovations at CPEEC & CPSSC 2024 in Xi'an. The company will present the world's first 8.5 kW OCP AI data center power supply using GaNSafe and Gen-3 Fast SiC MOSFETs, alongside the highest power density 4.5 kW AI data center power supply. Their 'IntelliWeave' patented digital control achieves PFC peak efficiencies of 99.3% and reduces power losses by 30%. The company will also display a 6.6kW 2-in-1 EV on-board charger and introduce the new GaNSlim family for applications up to 500W, featuring autonomous EMI control and loss-less sensing.
Navitas Semiconductor (NVTS) announces groundbreaking developments in GaN and SiC technologies to be showcased at electronica 2024. The highlight is the world's first 8.5 kW power supply for AI data centers, utilizing GaNSafe power ICs and Gen-3 Fast SiC MOSFETs. The Gen-3 Fast GeneSiC MOSFETs deliver up to 25°C lower case temperature and 3x longer life compared to competitors. The company will also display GaNSense Motor Drives ICs, 650V bi-directional GaN demonstrator, and SiCPAK modules for various high-power applications. According to Yole Group, GaN and SiC products are expected to capture 30% of the power semiconductor market by 2027.
Navitas Semiconductor (NVTS) has announced it will release its third quarter 2024 financial results after market close on Monday, November 4th, 2024. The company will host a conference call and webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern time to discuss the results and answer questions from financial analysts. Investors can access the call via toll-free numbers (800) 715-9871 or (646) 307-1963 using Conference ID 2158932. A webcast replay will be available in the Investor Relations section of Navitas' website.
Navitas Semiconductor (Nasdaq: NVTS) is set to introduce 'IntelliWeave', a patented digital control technique for improving AI data center power supply efficiency, at the IEEE Energy Conversion Congress and Expo (ECCE) this month. IntelliWeave combines next-generation GaN and SiC semiconductors with innovative control strategies to achieve:
- Peak efficiencies up to 99.3% in Power Factor Control (PFC)
- 30% reduction in power losses compared to existing solutions
- Precision current sharing and ultra-fast dynamic response
- Zero voltage switching across the full-load range
The technology has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU. Navitas' Director, Tao Wei, will present on this novel digital control at ECCE 2024 in Phoenix, Arizona on October 21st.
Navitas Semiconductor (Nasdaq: NVTS) has announced GaNSlim™, a new generation of highly-integrated gallium nitride (GaN) power ICs. These devices offer the highest level of integration and thermal performance, simplifying and speeding up the development of small form factor, high-power-density applications up to 500 W.
Key features of GaNSlim include:
- Integrated drive, control, and protection
- Integrated EMI control and loss-less current sensing
- High thermal performance proprietary DPAK-4L package
- Ultra-low startup current below 10 µA
- Autonomous turn-on/off slew rate control
- Over-temperature protection and auto sleep-mode
Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting. The NV614x GaNSlim family is rated at 700 V with RDS(ON) ratings from 120 mΩ to 330 mΩ, available for both isolated and non-isolated topologies, and comes with a twenty-year warranty.
Navitas Semiconductor (Nasdaq: NVTS) has announced the availability of its high-power GaNSafe family in a TOLT (Transistor Outline Leaded Top-side cooling) package. This new offering is designed for demanding, high-power applications such as AI data centers, solar/energy storage, and industrial markets. The GaNSafe family integrates control, drive, sensing, and critical protection features, making it the world's safest GaN with short-circuit protection, 2kV ESD protection, and programmable slew rate control.
The TOLT packaging enhances thermal dissipation, allowing for reduced operating temperature and increased current capability. Suitable for applications from 1 kW to 22 kW, the 650 V GaNSafe in TOLT packaging is available with RDS(ON)MAX ranging from 25 to 98 mΩ. Navitas will also offer reference design platforms for applications including data center power supplies and EV on-board chargers.
Navitas Semiconductor (Nasdaq: NVTS) has announced the release of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L and TOLL surface-mount packages. These Gen-3 Fast SiC MOSFETs, featuring Navitas' proprietary 'trench-assisted planar' technology, offer superior performance for electric vehicle (EV) applications. Key benefits include:
- Up to 25°C lower case temperatures than conventional devices
- Up to 3x longer operating life in high-stress EV environments
- Optimized for fastest switching speed and highest efficiency
- Support for increased power density in EV systems
The new MOSFETs cater to both 400V (650V-rated) and 800V (1,200V-rated) EV architectures, with RDS(ON) ratings ranging from 20 to 55 mΩ and 18 to 135 mΩ respectively. The TOLL package for 400V EVs offers significant improvements in thermal resistance, PCB footprint, and size compared to D2PAK-7L.
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