Micron Announces Shipment of 1γ (1-gamma) DRAM: Pioneering Memory Technology Advancements for Future Compute Needs
Micron Technology (MU) has announced it is the first in the industry to ship samples of its 1γ (1-gamma) sixth-generation DRAM node-based DDR5 memory. The new 16Gb DDR5 DRAM offers up to 9200MT/s speed capabilities, delivering a 15% speed increase and over 20% power reduction compared to its predecessor.
The 1γ DRAM node features include enhanced performance for AI workloads, significant power savings through next-generation high-K metal gate CMOS technology, and improved bit-density output with over 30% more bits-per-wafer compared to the previous generation. The technology will be implemented across Micron's memory portfolio, serving various applications from data centers to Edge AI devices.
The company has begun shipping samples to ecosystem partners and select customers, with AMD and Intel already starting validation processes for the new memory technology.
Micron Technology (MU) ha annunciato di essere la prima azienda del settore a spedire campioni della sua memoria DDR5 basata sul nodo DRAM di sesta generazione 1γ (1-gamma). Il nuovo DRAM DDR5 da 16Gb offre fino a 9200MT/s di capacità di velocità, garantendo un aumento della velocità del 15% e una riduzione del consumo energetico di oltre il 20% rispetto al suo predecessore.
Le caratteristiche del nodo DRAM 1γ includono prestazioni migliorate per i carichi di lavoro di intelligenza artificiale, significativi risparmi energetici grazie alla tecnologia CMOS a gate metallico ad alta K di nuova generazione, e output di densità di bit migliorato con oltre il 30% di bit in più per wafer rispetto alla generazione precedente. La tecnologia sarà implementata in tutto il portafoglio di memorie di Micron, servendo varie applicazioni dai data center ai dispositivi Edge AI.
L'azienda ha iniziato a spedire campioni ai partner dell'ecosistema e a clienti selezionati, con AMD e Intel che hanno già avviato i processi di validazione per la nuova tecnologia di memoria.
Micron Technology (MU) ha anunciado que es la primera en la industria en enviar muestras de su memoria DDR5 basada en el nodo DRAM de sexta generación 1γ (1-gamma). El nuevo DRAM DDR5 de 16Gb ofrece hasta 9200MT/s de capacidad de velocidad, lo que proporciona un aumento de velocidad del 15% y una reducción de potencia de más del 20% en comparación con su predecesor.
Las características del nodo DRAM 1γ incluyen mejor rendimiento para cargas de trabajo de IA, ahorros significativos de energía a través de la tecnología CMOS de puerta metálica de alta K de próxima generación, y salida de densidad de bits mejorada con más del 30% de bits por oblea en comparación con la generación anterior. La tecnología se implementará en todo el portafolio de memorias de Micron, atendiendo diversas aplicaciones desde centros de datos hasta dispositivos Edge AI.
La empresa ha comenzado a enviar muestras a socios del ecosistema y clientes seleccionados, con AMD e Intel ya iniciando procesos de validación para la nueva tecnología de memoria.
마이크론 테크놀로지 (MU)는 업계 최초로 1γ (1-gamma) 6세대 DRAM 노드 기반 DDR5 메모리 샘플을 발송했다고 발표했습니다. 새로운 16Gb DDR5 DRAM은 최대 9200MT/s의 속도 능력을 제공하며, 이전 모델에 비해 15%의 속도 증가와 20% 이상의 전력 절감을 실현합니다.
1γ DRAM 노드의 특징으로는 AI 작업 부하에 대한 향상된 성능, 차세대 고-K 금속 게이트 CMOS 기술을 통한 상당한 전력 절감, 그리고 이전 세대에 비해 30% 이상의 비트 밀도 출력을 개선한 점이 있습니다. 이 기술은 마이크론의 메모리 포트폴리오 전반에 걸쳐 구현되어 데이터 센터에서 Edge AI 장치에 이르는 다양한 애플리케이션에 서비스를 제공합니다.
회사는 생태계 파트너 및 선택된 고객에게 샘플을 발송하기 시작했으며, AMD와 Intel은 이미 새로운 메모리 기술에 대한 검증 프로세스를 시작했습니다.
Micron Technology (MU) a annoncé qu'elle est la première dans l'industrie à expédier des échantillons de sa mémoire DDR5 basée sur le nœud DRAM de sixième génération 1γ (1-gamma). Le nouveau DRAM DDR5 de 16Gb offre jusqu'à 9200MT/s de capacités de vitesse, offrant une augmentation de vitesse de 15 % et une réduction de la consommation d'énergie de plus de 20 % par rapport à son prédécesseur.
Les caractéristiques du nœud DRAM 1γ incluent des performances améliorées pour les charges de travail d'IA, des économies d'énergie significatives grâce à la technologie CMOS à porte métallique haute K de nouvelle génération, et une sortie de densité de bits améliorée avec plus de 30 % de bits en plus par wafer par rapport à la génération précédente. La technologie sera mise en œuvre dans l'ensemble du portefeuille de mémoire de Micron, servant diverses applications allant des centres de données aux dispositifs Edge AI.
L'entreprise a commencé à expédier des échantillons à des partenaires de l'écosystème et à des clients sélectionnés, AMD et Intel ayant déjà commencé les processus de validation pour la nouvelle technologie de mémoire.
Micron Technology (MU) hat angekündigt, dass sie die erste in der Branche ist, die Muster ihres 1γ (1-gamma) DRAM-Knotens der sechsten Generation basierten DDR5-Speichers versendet. Der neue 16Gb DDR5 DRAM bietet bis zu 9200MT/s Geschwindigkeitsfähigkeiten, was eine Geschwindigkeitssteigerung von 15% und eine Reduzierung des Stromverbrauchs um über 20% im Vergleich zu seinem Vorgänger bedeutet.
Die Merkmale des 1γ DRAM-Knotens umfassen verbesserte Leistung für KI-Arbeitslasten, erhebliche Energieeinsparungen durch die CMOS-Technologie mit Hoch-K-Metallgate der nächsten Generation und verbesserte Bit-Dichte-Ausgabe mit über 30% mehr Bits pro Wafer im Vergleich zur vorherigen Generation. Die Technologie wird in das gesamte Speicherportfolio von Micron integriert und bedient verschiedene Anwendungen von Rechenzentren bis hin zu Edge-AI-Geräten.
Das Unternehmen hat begonnen, Muster an Partner des Ökosystems und ausgewählte Kunden zu versenden, wobei AMD und Intel bereits mit Validierungsprozessen für die neue Speichertechnologie begonnen haben.
- First-to-market with 1γ DRAM node technology
- 15% speed increase in DDR5 performance
- 20% power reduction compared to previous generation
- 30% more bits-per-wafer output efficiency
- Early validation partnership with major CPU manufacturers (AMD, Intel)
- None.
Insights
Micron's 1γ DRAM: A Technical and Financial Inflection Point
Micron's announcement of the industry's first 1γ (1-gamma) DRAM node marks a significant technological leap that strengthens the company's competitive position in the
The 1γ node delivers three critical advantages that directly impact Micron's bottom line:
- The
30%+ increase in bits-per-wafer output substantially improves manufacturing economics, potentially boosting gross margins by 200-300 basis points once at scale - The
20%+ power reduction addresses a critical constraint in AI systems, where thermal limitations often cap memory capacity - The
15% performance improvement enables Micron to command premium pricing for high-end applications
Micron's first-mover advantage with 1γ technology provides a 6-9 month competitive edge over Samsung and SK Hynix. This timing is particularly advantageous as it aligns with the accelerating deployment of AI infrastructure, where memory bandwidth and capacity are increasingly critical bottlenecks.
The strategic deployment of EUV lithography in this node represents a pivotal manufacturing shift. While requiring substantial capital investment, EUV enables more precise patterning that improves yields and reduces manufacturing complexity. This translates to better cost structures once at volume production.
Micron's global manufacturing strategy for 1γ DRAM is particularly noteworthy given current geopolitical tensions. By implementing this technology across multiple sites, Micron creates supply chain resilience that customers increasingly value, potentially commanding slight premiums for supply assurance.
The validation from AMD and Intel signals strong customer acceptance, suggesting rapid design-in cycles that could accelerate revenue realization. This positions Micron to capture share in high-margin segments like data center and AI accelerators.
While the announcement doesn't specify volume production timing, typical ramps suggest meaningful revenue contribution beginning in late 2025, with full margin benefits realized by mid-2026. This positions Micron to potentially outperform the memory industry's growth rate by 300-500 basis points during this period.
For investors, this technology advancement represents a key catalyst that strengthens Micron's competitive moat in an increasingly differentiated memory market, where technical capabilities now matter more than raw capacity. The long-term implications extend beyond immediate financial metrics to Micron's strategic positioning in the AI-driven computing landscape.
Micron delivers superior performance and power efficiency to data center, client and mobile platforms with the industry’s first high performance 1γ node
BOISE, Idaho, Feb. 25, 2025 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced it is the first in the industry to ship samples of its 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. This 1γ DRAM milestone builds on Micron’s previous 1α (1-alpha) and 1β (1-beta) DRAM node leadership to deliver innovations that will power future computing platforms from the cloud to industrial and consumer applications to Edge AI devices like AI PCs, smartphones and automobiles. The Micron 1γ DRAM node will first be leveraged in its 16Gb DDR5 DRAM and over time will be integrated across Micron’s memory portfolio to meet the industry’s accelerating demand for high-performance, energy-efficient memory solutions for AI. Designed to offer speed capabilities of up to 9200MT/s, the 16Gb DDR5 product provides up to a
Media Snippet accompanying this announcement is available by clicking on this link.
Why this matters:
With the introduction of AI across the data center and the edge, the demand for memory has never been greater. Micron’s transition to the 1γ DRAM node helps address the key challenges customers are looking to resolve:
- Enhanced performance — Micron 1γ-based DRAM provides improved performance that will support the scaling of compute across a variety of memory offerings from data centers to edge devices to meet the demands of future AI workload requirements.
- Power savings — Micron’s 1γ node, using next-generation high-K metal gate CMOS technology paired with design optimizations, enables greater than
20% lower power, which leads to improved thermal profiles. - Improved bit-density output — Micron’s 1γ node, leveraging EUV lithography, design optimizations and process innovations, results in greater than
30% more bits-per-wafer output over the previous generation3 and the ability to scale memory supply efficiently.
“Micron’s expertise in developing proprietary DRAM technologies, combined with our strategic use of EUV lithography, has resulted in a robust portfolio of cutting-edge 1γ-based memory products poised to propel the AI ecosystem forward,” stated Scott DeBoer, executive vice president and chief technology & products officer at Micron. “The enhanced bit density output of the 1γ DRAM node underscores Micron’s manufacturing prowess and efficiency, enabling us to scale memory supply to meet the growing industry demand.”
Micron’s proven DRAM technology and manufacturing strategy over multiple generations has enabled the creation of this optimized 1γ node. The 1γ DRAM node innovation is supported by CMOS advancements, including next-generation high-K metal gate technology that improves the transistor performance for better speed capability, design optimization and feature size shrink, all of which unlock the benefits of power savings and performance scaling. Additionally, by optimally incorporating leading edge EUV lithography, along with advanced high aspect ratio etch technology and industry leading design innovations, the 1γ node delivers industry-leading bit density advantages. By developing the 1γ node for manufacturing across global sites, Micron is helping to ensure better technology and supply resiliency for the industry.
"Micron has once again led the industry in introducing the world’s most advanced memory technology. Micron's 1γ DRAM node is a groundbreaking achievement with its unmatched power efficiency and extraordinary performance,” said Sumit Sadana, executive vice president and chief business officer of Micron Technology. “Micron 1γ DRAM products are set to revolutionize the AI ecosystem by delivering scalable memory solutions across all segments, from data centers to the edge, enabling our customers to stay ahead of the rapidly evolving industry demands."
Transforming products from cloud to edge
Serving as the foundation for future products, the 1γ node will be integrated across the Micron memory portfolio:
- Data center — 1γ-based DDR5 memory solutions for the data center, which enable up to
15% faster performance, deliver increased energy efficiency and help enable continued server performance scaling allowing data centers to optimize within future rack-level power and thermal design. - Edge AI — 1γ low-power DRAM solutions offer improved power savings and increased bandwidth, enhancing the user experience with Edge AI solutions.
- AI PCs — 1γ DDR5 SODIMMs increase performance and reduce power usage by
20% ,4 extending battery life and improving the overall notebook user experience. - Mobile — 1γ LPDDR5X will enable exceptional AI experiences at the edge and continues Micron’s leadership in mobile technology.
- Automotive — 1γ-based LPDDR5X memory extends capacity, longevity and performance, while achieving speeds up to 9600MT/s.
- AI PCs — 1γ DDR5 SODIMMs increase performance and reduce power usage by
Industry quotes:
"We are excited to see Micron’s progress with their 1γ DRAM node and we have already begun validation efforts for Micron 1γ DDR5 memory,” said Amit Goel, Corporate Vice President, Server Platform Solutions Engineering, AMD. “Our close collaboration is crucial as we continue to advance the compute ecosystem with next-generation AMD EPYC products for the data center as well as consumer processors across our portfolio."
"Micron's 1γ node advancements bring solid power and density improvements to Intel servers and AI PCs. We are excited to see Micron's continued innovation in DRAM technology and look forward to augmenting server system performance and PC battery life based on these capacities," said Dr. Dimitrios Ziakas, vice president and general manager of Memory & IO Technologies at Intel Corporation. "Intel is working diligently through its rigorous server validation process for Micron's 1γ DDR5 memory samples, to deliver server systems with the highest quality and best-in-class experiences for our customers."
Qualified customers and partners may take part in the Micron Technology Enablement Program (TEP) for DDR5, which offers early access to technical information and to electrical and thermal models, as well as support to aid in the design, development and introduction of next-generation computing platforms.
Additional Resources:
About Micron Technology, Inc.
Micron Technology, Inc. is an industry leader in innovative memory and storage solutions, transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence (AI) and compute-intensive applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience. To learn more about Micron Technology, Inc. (Nasdaq: MU), visit micron.com.
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Micron Media Relations Contact
Kelly Sasso
Micron Technology, Inc.
+1 (208) 340-2410
ksasso@micron.com
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1 Increase in data rate speeds are based on expected future speeds for 1γ DDR5 memory offerings.
2 Power savings calculated based on power used in watts by 1γ-based DDR5 memory compared to 1β-based DDR5 memory.
3 Increased bits-per-wafer percentage calculation is based on the comparison between the 1β and 1γ process overall wafer bit density results.
4 Power savings calculated based on power used in watts by 1γ-based DDR5 SODIMM memory compared to 1β-based DDR5 SODIMM memory.
FAQ
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