II-VI Incorporated Expands Silicon Carbide Manufacturing Footprint for Power Electronics in Electric Vehicles and Clean Energy Applications
II-VI Incorporated (NASDAQ: IIVI) announced the expansion of its silicon carbide (SiC) wafer finishing capabilities in Fuzhou, China, to support the increasing demand for electric vehicles (EVs) and clean energy applications. The new facility will enhance production of conductive SiC substrates, crucial for improving EV efficiency by approximately 10% per charge. With China projected to account for over 40% of global EV sales, II-VI plans to boost its SiC production capacity significantly in the next 5 to 10 years, leveraging innovations including 200 mm conductive substrates.
- Expansion of SiC wafer finishing in Fuzhou, enhancing production capabilities.
- Projected increase in global SiC capacity over the next 5 to 10 years.
- SiC substrates improve EV efficiency by 10% on a single charge.
- None.
PITTSBURGH, April 15, 2021 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it has expanded its silicon carbide (SiC) wafer finishing manufacturing footprint in China to serve the largest worldwide market for electric vehicles (EVs) and for clean energy applications.
Spurred by increasing regulatory requirements for lower emissions of greenhouse gases and the decreasing cost of lithium-ion batteries, the market for EVs is growing rapidly and driving the demand for power electronics that are based on silicon carbide, a wide-bandgap material that increases the driving range of EVs by about
“According to recent industry reports, China is expected to continue to be the world’s largest electric car market at over
In addition to EVs, power electronics based on SiC enable high efficiency in inverters for solar and wind energy generation, as well as in smart-grid power switching, due to reduced switching losses, high power density, better heat dissipation, and increased bandwidth capability, compared with existing devices based on silicon.
The backend SiC wafer processing performed at II-VI’s new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing, cleaning, and inspection, all performed in Class 100 and 1000 cleanrooms. The facility is part of II-VI’s already announced plan to ramp its SiC substrate manufacturing capacity by five to ten times over five years, including with 200 mm diameter substrates. II-VI maintains a large manufacturing operations and product development presence in China in the cities of Fuzhou, Guangzhou, Shanghai, Shenzhen, Suzhou, and Wuxi.
About II-VI Incorporated
II-VI Incorporated, a global leader in engineered materials and optoelectronic components, is a vertically integrated manufacturing company that develops innovative products for diversified applications in communications, materials processing, aerospace & defense, semiconductor capital equipment, life sciences, consumer electronics, and automotive markets. Headquartered in Saxonburg, Pennsylvania, the Company has research and development, manufacturing, sales, service, and distribution facilities worldwide. The Company produces a wide variety of application-specific photonic and electronic materials and components, and deploys them in various forms, including integrated with advanced software to support our customers. For more information, please visit us at www.ii-vi.com.
CONTACT: | Mark Lourie | |
Vice President, Corporate Communications | ||
corporate.communications@ii-vi.com | ||
www.ii-vi.com/contact-us |
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