SK hynix Begins Volume Production of the World's First 12-Layer HBM3E
SK hynix has begun mass production of the world's first 12-layer HBM3E product with 36GB capacity, the largest in existing HBM. The company plans to supply these products to customers by the end of the year. This achievement comes six months after delivering the 8-layer HBM3E product in March.
Key features of the 12-layer HBM3E include:
- 50% increased capacity at the same thickness as the previous 8-layer product
- DRAM chips made 40% thinner
- Memory operation speed of 9.6 Gbps
- 10% higher heat dissipation performance
SK hynix aims to maintain its leadership in the AI memory market with this product, addressing the growing needs of AI companies.
SK hynix ha avviato la produzione di massa del primo prodotto al mondo con 12 strati HBM3E con una capacità di 36GB, il più grande esistente nell'HBM. L'azienda prevede di fornire questi prodotti ai clienti entro la fine dell'anno. Questo traguardo arriva sei mesi dopo la consegna del prodotto HBM3E a 8 strati a marzo.
Le principali caratteristiche del 12-strati HBM3E includono:
- Capacità aumentata del 50% mantenendo lo stesso spessore del prodotto a 8 strati precedente
- Chip DRAM realizzati con uno spessore inferiore del 40%
- Velocità operativa della memoria di 9.6 Gbps
- Performance di dissipazione del calore superiore del 10%
SK hynix mira a mantenere la sua leadership nel mercato della memoria per AI con questo prodotto, soddisfacendo le crescenti esigenze delle aziende AI.
SK hynix ha comenzado la producción en masa del primer producto HBM3E de 12 capas del mundo con una capacidad de 36GB, el más grande en el HBM existente. La compañía planea suministrar estos productos a los clientes para finales de año. Este logro se produce seis meses después de la entrega del producto HBM3E de 8 capas en marzo.
Las características clave del HBM3E de 12 capas incluyen:
- Aumento del 50% en la capacidad manteniendo el mismo grosor que el producto de 8 capas anterior
- Chip DRAM fabricados un 40% más delgados
- Velocidad de operación de memoria de 9.6 Gbps
- Rendimiento de disipación de calor un 10% superior
SK hynix busca mantener su liderazgo en el mercado de memoria para IA con este producto, atendiendo a las crecientes necesidades de las empresas de IA.
SK hynix는 세계 최초의 12층 HBM3E 제품을 대량 생산하기 시작했습니다. 이 제품은 36GB 용량으로, 현재 HBM 중 가장 큰 용량을 가집니다. 회사는 올해 말까지 고객에게 이 제품을 공급할 계획입니다. 이번 성과는 3월에 8층 HBM3E 제품을 전달한 지 6개월 만에 이루어진 것입니다.
12층 HBM3E의 주요 특징은 다음과 같습니다:
- 이전 8층 제품과 동일한 두께로 50% 증가한 용량
- 40% 더 얇아진 DRAM 칩
- 9.6 Gbps의 메모리 작동 속도
- 10% 향상된 열 방출 성능
SK hynix는 이 제품으로 AI 메모리 시장에서의 리더십을 유지하면서 AI 기업의 증가하는 수요를 충족하는 것을 목표로 하고 있습니다.
SK hynix a commencé la production de masse du premier produit HBM3E au monde avec 12 couches d'une capacité de 36 Go, le plus grand HBM existant. L'entreprise prévoit de fournir ces produits aux clients d'ici la fin de l'année. Ce succès intervient six mois après la livraison du produit HBM3E à 8 couches en mars.
Les principales caractéristiques du HBM3E à 12 couches incluent :
- Capacité augmentée de 50 % avec la même épaisseur que le produit à 8 couches précédent
- Puce DRAM fabriquée 40 % plus mince
- Vitesse de fonctionnement de la mémoire de 9,6 Gbps
- Performance de dissipation thermique supérieure de 10 %
SK hynix vise à maintenir sa position de leader sur le marché de la mémoire AI avec ce produit, répondant aux besoins croissants des entreprises AI.
SK hynix hat mit der Massenaus Produktion des weltweit ersten HBM3E-Produkts mit 12 Schichten und einer Kapazität von 36 GB begonnen, was die größte Kapazität im bestehenden HBM darstellt. Das Unternehmen plant, diese Produkte bis Ende des Jahres an Kunden zu liefern. Dieser Erfolg kommt sechs Monate nach der Auslieferung des HBM3E-Produkts mit 8 Schichten im März.
Die wichtigsten Merkmale des 12-Schichten HBM3E umfassen:
- 50 % erhöhte Kapazität bei der gleichen Dicke wie das vorherige 8-Schichten-Produkt
- DRAM-Chips, die um 40 % dünner sind
- Speichergeschwindigkeit von 9,6 Gbps
- 10 % höhere Wärmeableitungsleistung
SK hynix strebt an, mit diesem Produkt seine Führungsposition im AI-Speichermarkt zu behaupten und die wachsenden Bedürfnisse von AI-Unternehmen zu adressieren.
- World's first 12-layer HBM3E with 36GB capacity
- 50% increase in capacity compared to previous 8-layer product
- Highest memory speed available at 9.6 Gbps
- 10% higher heat dissipation performance
- Plans to supply mass-produced products to customers within the year
- None.
- The company plans to supply the highest-performing, highest-capacity 12-layer HBM3E to customers by the end of the year
- DRAM chips made
40% thinner to increase capacity by50% at the same thickness as the previous 8-layer product - The company to continue HBM's success with outstanding product performance and competitiveness
[1] Previously, the maximum capacity of HBM3E was 24GB from eight vertically stacked 3GB DRAM chips. |
[2] HBM (High Bandwidth Memory): This high-value, high-performance memory vertically interconnects multiple DRAM chips and dramatically increases data processing speed in comparison to traditional DRAM products. HBM3E is the extended version of HBM3, the fourth generation product that succeeds the previous generations of HBM, HBM2 and HBM2E. |
The company plans to supply mass-produced products to customers within the year, proving its overwhelming technology once again six months after delivering the HBM3E 8-layer product to customers for the first time in the industry in March this year.
SK hynix is the only company in the world that has developed and supplied the entire HBM lineup from the first generation (HBM1) to the fifth generation (HBM3E), since releasing the world's first HBM in 2013. The company plans to continue its leadership in the AI memory market, addressing the growing needs of AI companies by being the first in the industry to mass-produce the 12-layer HBM3E.
According to the company, the 12-layer HBM3E product meets the world's highest standards in all areas that are essential for AI memory including speed, capacity and stability. SK hynix has increased the speed of memory operations to 9.6 Gbps, the highest memory speed available today. If 'Llama 3 70B'[3], a Large Language Model (LLM), is driven by a single GPU equipped with four HBM3E products, it can read 70 billion total parameters 35 times within a second.
[3] Llama 3: Open-source LLM released by Meta in April 2024, with 3 sizes in total: 8B (Billion), 70B, and 400B. |
SK hynix has increased the capacity by
The company also solved structural issues that arise from stacking thinner chips higher by applying its core technology, the Advanced MR-MUF[5] process. This allows to provide
[4] TSV (Through Silicon Via): This advanced packaging technology links upper and lower chips with an electrode that vertically passes through thousands of fine holes on DRAM chips. |
[5] MR-MUF (Mass Reflow Molded Underfill): The process of stacking semiconductor chips, injecting liquid protective materials between them to protect the circuit between chips, and hardening them. The process has proved to be more efficient and effective for heat dissipation, compared with the method of laying film-type materials for each chip stack. SK hynix's advanced MR-MUF technology is critical to securing a stable HBM mass production as it provides good warpage control and reduces the pressure on the chips being stacked. |
"SK hynix has once again broken through technological limits demonstrating our industry leadership in AI memory," said Justin Kim, President (Head of AI Infra) at SK hynix. "We will continue our position as the No.1 global AI memory provider as we steadily prepare next-generation memory products to overcome the challenges of the AI era."
About SK hynix Inc.
SK hynix Inc., headquartered in
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SOURCE SK hynix Inc.
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