SiC Schottky Diodes from Diodes Incorporated Deliver Industry-Leading FOM and System Efficiency
Diodes Incorporated (DIOD) has expanded its silicon carbide (SiC) portfolio with five new 650V SiC Schottky diodes, rated from 4A to 12A. The DSCxxA065LP series features industry-leading figure-of-merit (FOM) and is housed in the T-DFN8080-4 package.
The diodes are designed for high-efficiency power switching applications including DC-DC and AC-DC conversion, renewable energy, data centers (particularly for AI workloads), and industrial motor drives. Key features include negligible switching losses, low forward voltage, and industry-lowest reverse leakage at 20µA (max).
The compact T-DFN8080-4 package (8mm x 8mm x 1mm) includes a large underside heat pad for reduced thermal resistance. Pricing ranges from $1.25 to $2.40 per unit in 2,500-piece quantities across the series.
Diodes Incorporated (DIOD) ha ampliato il suo portafoglio di carburo di silicio (SiC) con cinque nuovi diodi Schottky SiC da 650V, con correnti nominali da 4A a 12A. La serie DSCxxA065LP offre un indice di merito (FOM) tra i migliori del settore ed è contenuta nel package T-DFN8080-4.
I diodi sono progettati per applicazioni di commutazione di potenza ad alta efficienza, tra cui conversione DC-DC e AC-DC, energie rinnovabili, data center (in particolare per carichi di lavoro AI) e azionamenti industriali per motori. Le caratteristiche principali includono perdite di commutazione trascurabili, bassa tensione diretta e la più bassa corrente di dispersione inversa del settore, pari a 20µA (massimo).
Il compatto package T-DFN8080-4 (8mm x 8mm x 1mm) integra un ampio pad termico inferiore per ridurre la resistenza termica. Il prezzo varia da 1,25 a 2,40 dollari per unità, per ordini di 2.500 pezzi lungo tutta la serie.
Diodes Incorporated (DIOD) ha ampliado su portafolio de carburo de silicio (SiC) con cinco nuevos diodos Schottky SiC de 650V, con corrientes nominales de 4A a 12A. La serie DSCxxA065LP cuenta con una figura de mérito (FOM) líder en la industria y viene en el encapsulado T-DFN8080-4.
Los diodos están diseñados para aplicaciones de conmutación de potencia de alta eficiencia, incluyendo conversión DC-DC y AC-DC, energías renovables, centros de datos (especialmente para cargas de trabajo de IA) y accionamientos industriales de motores. Las características clave incluyen pérdidas de conmutación insignificantes, baja tensión directa y la más baja corriente de fuga inversa de la industria, con un máximo de 20µA.
El compacto encapsulado T-DFN8080-4 (8mm x 8mm x 1mm) incluye una gran almohadilla térmica inferior para reducir la resistencia térmica. Los precios oscilan entre $1.25 y $2.40 por unidad en cantidades de 2,500 piezas a lo largo de la serie.
Diodes Incorporated (DIOD)는 4A에서 12A까지 정격인 5개의 새로운 650V 실리콘 카바이드(SiC) 쇼트키 다이오드로 SiC 제품군을 확장했습니다. DSCxxA065LP 시리즈는 업계 최고 수준의 성능 지수(FOM)를 자랑하며 T-DFN8080-4 패키지에 탑재되어 있습니다.
이 다이오드들은 DC-DC 및 AC-DC 변환, 재생 에너지, 데이터 센터(특히 AI 워크로드용), 산업용 모터 구동 등 고효율 전력 스위칭 애플리케이션을 위해 설계되었습니다. 주요 특징으로는 무시할 수 있는 스위칭 손실, 낮은 순방향 전압, 업계 최저 수준인 최대 20µA의 역방향 누설 전류가 있습니다.
컴팩트한 T-DFN8080-4 패키지(8mm x 8mm x 1mm)는 열 저항을 줄이기 위한 넓은 하단 히트 패드를 포함합니다. 가격은 시리즈 전반에 걸쳐 2,500개 단위 구매 시 개당 $1.25에서 $2.40 사이입니다.
Diodes Incorporated (DIOD) a élargi sa gamme de carbure de silicium (SiC) avec cinq nouveaux diodes Schottky SiC 650V, allant de 4A à 12A. La série DSCxxA065LP présente un indice de performance (FOM) parmi les meilleurs du secteur et est logée dans un boîtier T-DFN8080-4.
Ces diodes sont conçues pour des applications de commutation de puissance haute efficacité, incluant la conversion DC-DC et AC-DC, les énergies renouvelables, les centres de données (notamment pour les charges de travail IA) et les entraînements moteurs industriels. Les caractéristiques principales comprennent des pertes de commutation négligeables, une faible tension directe et la plus faible fuite inverse du secteur, avec un maximum de 20µA.
Le boîtier compact T-DFN8080-4 (8mm x 8mm x 1mm) intègre un large pad thermique inférieur pour réduire la résistance thermique. Les prix varient de 1,25 $ à 2,40 $ l’unité pour des quantités de 2 500 pièces sur toute la série.
Diodes Incorporated (DIOD) hat sein Portfolio an Siliziumkarbid (SiC) mit fünf neuen 650V SiC-Schottky-Dioden erweitert, die von 4A bis 12A ausgelegt sind. Die DSCxxA065LP-Serie bietet eine branchenführende Gütezahl (FOM) und ist im T-DFN8080-4-Gehäuse untergebracht.
Die Dioden sind für hoch effiziente Leistungsschaltanwendungen konzipiert, darunter DC-DC- und AC-DC-Wandlung, erneuerbare Energien, Rechenzentren (insbesondere für KI-Workloads) und industrielle Motorantriebe. Zu den Hauptmerkmalen gehören vernachlässigbare Schaltverluste, niedrige Durchlassspannung und der branchenweit niedrigste Rückwärtsleckstrom von maximal 20µA.
Das kompakte T-DFN8080-4-Gehäuse (8 mm x 8 mm x 1 mm) verfügt über eine große unterseitige Wärmeableitungsfläche zur Verringerung des thermischen Widerstands. Die Preise liegen bei Abnahme von 2.500 Stück je nach Typ zwischen 1,25 und 2,40 US-Dollar pro Einheit.
- Industry-leading figure-of-merit (FOM) performance
- Lowest reverse leakage in industry at 20µA max, reducing heat dissipation and operating costs
- Compact package design with improved thermal efficiency
- Strategic positioning for high-growth markets (AI data centers, renewable energy)
- None.
Insights
Diodes Inc's expansion into the silicon carbide (SiC) market represents a strategic move to capture share in the high-growth power semiconductor segment. The introduction of these five new 650V SiC Schottky diodes positions DIOD in the premium end of the power electronics market where margins are typically higher than standard silicon components.
The technical specifications are particularly compelling - claiming industry-leading figure-of-merit (FOM) performance based on low capacitive charge and forward voltage. These aren't just incremental improvements; they directly translate to higher system efficiency in power-hungry applications like data centers and renewable energy systems.
What's most notable is DIOD's clear targeting of high-growth applications, especially data centers supporting AI workloads, which require exceptional power efficiency to manage thermal constraints and operating costs. The renewable energy and industrial motor drive applications represent additional substantial markets.
The pricing strategy (
This product launch strengthens Diodes' competitive positioning in the rapidly expanding SiC market, though quantitative revenue impact will depend on design win momentum and volume production ramp-up.
The technical specifications of these new SiC diodes reveal significant engineering advantages that translate directly to system-level benefits. The ultra-low reverse leakage current (20µA max) is particularly impressive, as this parameter directly impacts thermal performance and reliability in high-frequency switching applications.
The T-DFN8080-4 package choice demonstrates thoughtful thermal engineering. Its large underside heat pad significantly reduces thermal resistance - critical for SiC devices that often operate at higher power densities than silicon alternatives. The 8mm × 8mm × 1mm package footprint offers substantial space savings over traditional DPAK packages while improving thermal performance.
In practical applications, these performance metrics deliver three key benefits:
- Higher efficiency power conversion (reduced switching and conduction losses)
- Reduced cooling requirements (lower system cost and size)
- Improved reliability (from better thermal management)
For data centers processing AI workloads, the efficiency gains could be substantial. A
In renewable energy applications, these diodes would enhance inverter efficiency, potentially increasing energy harvest. The absence of reverse recovery current makes these ideal for soft-switching topologies increasingly common in modern power designs.
The industry-leading FOM, calculated as FOM=QC×VF, is attributed to:
- Negligible switching losses, thanks to the absence of reverse recovery current and low capacitive charge (QC), and
- Low forward voltage (VF) minimizing conduction losses, enhancing overall power efficiency.
These characteristics make them ideal for high-speed switching circuits.
The high-performance SiC diodes are also notable for their lowest reverse leakage (IR) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system stability and reliability, particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and operating expenses.
The compact and low-profile T-DFN8080-4 (typ. 8mm x 8mm x 1mm) surface mount package incorporates a large underside heat pad, which reduces thermal resistance. Requiring less board space and providing a larger heat pad, the T‑DFN8080-4 is an ideal alternative to the TO252 (DPAK). This benefits circuit designs by increasing power density, reducing overall solution size, and lowering the cooling budget.
The 4A DSC04A065LP, 6A DSC06A065LP, 8A DSC08A065LP, 10A DSC10A065LP, and 12A DSC12A065LP are available at
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of analog and discrete power solutions combined with leading-edge packaging technology to meet customers’ needs. Our broad range of application-specific products and solutions-focused sales, coupled with global operations including engineering, testing, manufacturing, and customer service, enable us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com.
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