Industrial-Grade Silicon Carbide MOSFET from Diodes Incorporated Enables Higher Power Density

Rhea-AI Summary

Diodes Incorporated (NASDAQ: DIOD) has unveiled its new DMWS120H100SM4 N-channel SiC MOSFET, designed for applications requiring higher efficiency and power density, such as industrial motor drives and EV chargers. This MOSFET operates at 1200V and supports drain currents up to 37A while maintaining low thermal conductivity. It features a low R_DS(ON) of 80mΩ and a gate charge of 52nC, enhancing efficiency. Notably, it is the first SiC MOSFET available in a TO247-4 package, optimizing switching performance. The device is priced at $21.50 in 20-piece quantities.

Positive

• Introduction of the DMWS120H100SM4 SiC MOSFET, addressing high demand for efficiency.
• Operates at high voltage (1200V) and supports drain currents up to 37A.
• Low R_DS(ON) of 80mΩ minimizes conduction losses, enhancing efficiency.
• First SiC MOSFET in a TO247-4 package, optimizing performance.

Negative

• None.

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (Diodes) (Nasdaq: DIOD) introduces the latest addition to its portfolio of Silicon Carbide (SiC) products: the DMWS120H100SM4 N-channel SiC MOSFET. This device addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data center and telecom power supplies, DC-DC converters, and electric vehicle (EV) battery chargers.

The DMWS120H100SM4 operates at a high voltage (1200V) and drain current (up to 37A) while maintaining low thermal conductivity (R_θJC = 0.6°C/W), making it well-suited for applications running in harsh environments. This MOSFET has a low R_DS(ON) (typical) of only 80mΩ (for a 15V gate drive) to minimize conduction losses and provide higher efficiency. In addition, the device has a gate charge of only 52nC to reduce switching losses and lower the package temperature.

This product is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimize the switching performance, thereby enabling even higher power densities.

The DMWS120H100SM4 is available at $21.50 in 20-piece quantities.

About Diodes Incorporated

Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Our broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 32 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com.

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.

All other trademarks are the property of their respective owners.

©2023 Diodes Incorporated. All Rights Reserved.

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Company Contact:

Diodes Incorporated

Emily Yang

SVP, Worldwide Sales and Marketing

P: 972-987-3900

Contact Us

Investor Relations Contact:

Shelton Group

Leanne K. Sievers

President

P: 949-224-3874

E: lsievers@sheltongroup.com

Source: Diodes Incorporated (P)

FAQ

What is the DMWS120H100SM4 MOSFET introduced by Diodes?

The DMWS120H100SM4 is an N-channel SiC MOSFET designed for high efficiency and power density applications.

What are the operating specifications of the DMWS120H100SM4?

It operates at 1200V and can handle drain currents up to 37A.

What applications are suited for the DMWS120H100SM4 MOSFET?

It is suitable for industrial motor drives, solar inverters, data center power supplies, and electric vehicle battery chargers.

What is the price of the DMWS120H100SM4 MOSFET?

The DMWS120H100SM4 is priced at $21.50 for a quantity of 20 pieces.

What is unique about the DMWS120H100SM4 MOSFET?

It is the first SiC MOSFET available in a TO247-4 package, optimizing switching performance.