An email has been sent to your address with instructions for changing your password.
There is no user registered with this email.
Sign Up
To create a free account, please fill out the form below.
Thank you for signing up!
A confirmation email has been sent to your email address. Please check your email and follow the instructions in the message to complete the registration process. If you do not receive the email, please check your spam folder or contact us for assistance.
Welcome to our platform!
Oops!
Something went wrong while trying to create your new account. Please try again and if the problem persist, Email Us to receive support.
Media Alert: Atomera to Present at IEEE ISPSD 2022 Conference
Rhea-AI Impact
(Low)
Rhea-AI Sentiment
(Neutral)
Tags
conferences
Rhea-AI Summary
Atomera Incorporated (Nasdaq: ATOM) is set to present both in-person and virtually at the upcoming event on May 23, showcasing their work on Mears Silicon Technology™ (MST®).
The poster, titled “Source Engineering on Oxygen-Inserted Si Channel for Gate Length Scaling of Low-Voltage Switch Devices,” demonstrates a 100% increase in drive current through gate-length scaling of a 5V analog MOSFET down to 0.25um. This innovation achieves industry-leading resistance specifications while maintaining device reliability.
Positive
None.
Negative
None.
Atomera Incorporated (Nasdaq: ATOM):
WHO:
Yi-Ann Chen et al. of Atomera Incorporated (Nasdaq: ATOM), a semiconductor materials and technology licensing company
WHAT:
Both in-person and virtual presentation of Atomera’s poster, entitled
“Source Engineering on Oxygen-Inserted Si Channel for Gate Length Scaling
of Low-Voltage Switch Devices.”
This presentation will discuss using MST®-enabled (also referred to as “Oxygen-Inserted Silicon”) source engineering for gate-length scaling of low-voltage power switch devices. These results were demonstrated on silicon fabricated at an automotive-qualified foundry by shrinking the gate length of a baseline 5V analog MOSFET down to 0.25um, leading to a 100% increase in drive current compared to baseline devices. The result is the industry’s best RSP for both NMOS (< 0.8mOhm-mm2) and PMOS (1.8mOhm-mm2) switch devices, while maintaining all required device operations and reliability metrics. Atomera’s poster will highlight the benefits of MST integration in the channel for precise dopant diffusion control and electron mobility enhancements, and show how the team was able to successfully demonstrate the benefits of the MST-enabled channel source engineering for gate-length scaling of low-voltage power switch devices.
Atomera Incorporated, one of America’s top 100 Best Small Companies in 2022 ranked by Forbes, is a semiconductor materials and technology licensing company focused on deploying its proprietary, silicon-proven technology into the semiconductor industry. Atomera has developed Mears Silicon Technology™ (MST®), which increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor industry roadmap. More information can be found at www.atomera.com.
