EPC and Analog Devices Collaborate to Deliver up to 2 MHz Switching Frequency for the Highest Density DC-DC Converters Using GaN FETs
Analog Devices and EPC have introduced the EPC9160, a new reference design featuring the LTC7890 synchronous GaN buck controller, optimized for driving EPC's eGaN FETs. This innovative design supports switching frequencies up to 2 MHz, allowing for high power density and cost-effective DC-DC conversion. The EPC9160 handles input voltages from 9 V to 24 V, providing outputs of 3.3 V or 5 V at 15 A continuous current. With its compact dimensions of 23 mm x 22 mm, it is aimed at automotive, computing, industrial, consumer, and telecom applications, emphasizing efficiency with over 93% performance.
- EPC9160 offers up to 2 MHz switching frequency for high power density.
- Compact design of 23 mm x 22 mm enables applications in space-constrained environments.
- Efficiency exceeds 93% for the 5 V output at 24 V input.
- Supports dual output at 15 A continuous current, enhancing versatility.
- None.
EPC and
EPC and Analog Devices Collaborate on Reference Design for High Density DC-DC Converters Using GaN FETs (Graphic: Business Wire)
The high density and thickness of the design plus the 2 MHz switching frequency make this solution ideal for automotive console applications, where 2 MHz switching frequency is preferred, and computing, industrial, consumer, and telecom power systems requiring small size and a very thin profile. eGaN® FETs provide the fast switching, high efficiency and small size that can meet the stringent power density requirements of these leading-edge applications.
The EPC9160 reference design uses the EPC2055 enhancement-mode GaN FET and the LTC7890 two-phase analog buck controller with integrated GaN drivers.
- The LTC7890 100 V low Iq, dual, 2-phase synchronous step-down controller is fully optimized to drive EPC eGaN FETs and integrates a half bridge driver and smart bootstrap diode. It offers optimized near-zero deadtime or programmable deadtime and programmable switching frequency up to 3 MHz. The quiescent current of 5 uA (VIN = 48 V, VOUT = 5 V, CH1 only) enables very low standby power consumption and excellent light load efficiency.
- The EPC2055 40 V eGaN FETs offers 3 mOhm max RDS(on), 6.6 nC QG, 0.7 nC QGD, 1.3 nC QOSS and zero QRR in a super small 2.5 mm x 1.5 mm footprint and can deliver up to 29 A continuous current and 161 A peak current. The excellent dynamic parameters allow very small switching losses at 2 MHz switching frequency.
The efficiency of the EPC9160 is greater than
“The Analog Device’s LTC7890 is designed to fully exploit the high performance of EPC’s eGaN FETs for high power density solutions,” said
Price and Availability
The EPC9160 demonstration board from EPC is priced
For more information on the LTC789 from Analog contact
About EPC
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
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FAQ
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