Vishay Intertechnology 80 V Symmetric Dual MOSFET Delivers Best in Class RDS(ON) in PowerPAIR® 3x3FS to Increase Power Density, Efficiency, and Thermal Performance
- Introducing new 80V symmetric dual n-channel power MOSFET, SiZF4800LDT, in a compact package
- Reduces board space by 50% compared to two discrete devices in the PowerPAK 1212 package
- Enhances power density, efficiency, and thermal performance for industrial and telecom applications
- Offers low on-resistance, high continuous drain current, and improved thermal dissipation
- Unique pin configuration simplifies PCB layout and minimizes parasitic inductance
- Competitor comparison shows superior performance in various parameters
- Samples and production quantities available with lead times of 26 weeks
- None.
Insights
The introduction of Vishay Intertechnology's new 80 V symmetric dual n-channel power MOSFET represents a significant advancement in power conversion technology. The integration of high and low side TrenchFET Gen IV MOSFETs into a single PowerPAIR 3x3FS package is a substantial innovation that optimizes space without compromising performance. The reduction in on-resistance to 18.5 mΩ at 4.5 V, which is 16% lower than that of the closest competitor, indicates a notable improvement in the efficiency of power conversion systems. Additionally, the MOSFET's thermal performance is enhanced by flip-chip technology, which provides superior thermal dissipation with 54% lower thermal resistance compared to competing devices. This improved thermal management enables a higher continuous drain current of 36 A, 38% above the nearest competitor, which could potentially lead to increased reliability and longevity of the devices in which they are used.
From a market perspective, the release of the SiZF4800LDT by Vishay Intertechnology could have a favorable impact on their market positioning within the semiconductor industry. The device's space-saving features and simplified design could appeal to manufacturers of industrial and telecom equipment, potentially leading to increased adoption rates. The 50% reduction in PCB space required could be particularly advantageous for applications where space is at a premium, such as in compact industrial motor drives and portable power tools. The extended lead time of 26 weeks may suggest anticipation of high demand or a strategic move to manage production capacity. Vishay's positioning as 'The DNA of tech' and its extensive portfolio in various high-demand markets such as automotive and telecommunications could further solidify its reputation for innovation and quality, potentially influencing stock market performance positively if the new product gains significant market traction.
Considering the current global supply chain environment, the introduction of the SiZF4800LDT MOSFET could have implications for electronic component supply chains. The device's ability to replace two discrete devices with a single package can streamline the procurement process and reduce supply chain complexity for manufacturers. This simplification could lead to cost savings and improved inventory management for companies integrating these components into their products. However, the 26-week lead time also highlights the ongoing challenges in the semiconductor supply chain, potentially exacerbated by increased demand for such advanced components. Companies interested in incorporating this new MOSFET into their designs will need to plan accordingly and may need to adjust their inventory strategies to accommodate the extended lead times.
Requiring 50 % Less PCB Space Than Discrete Devices in the PowerPAK® 1212, Space-Saving Device Reduces Component Counts and Simplifies Designs
MALVERN, Pa., Feb. 28, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR® 3x3FS package. For power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency while enhancing thermal performance, reducing component counts, and simplifying designs.
The dual MOSFET released today can be used in place of two discrete devices typically specified in the PowerPAK® 1212 package, saving 50 % board space. The device provides designers with a space-saving solution for synchronous buck converters, point of load (POL) converters, and half- and full-bridge power stages for DC/DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the SiZF4800LDT form an optimized combination for 50 % duty cycles, while its logic level turn-on at 4.5 V simplifies circuit driving.
To increase power density, the MOSFET offers best in class on-resistance down to 18.5 mΩ typical at 4.5 V. This is 16 % lower than the closest competing device in the same package dimensions. For increased efficiency in high frequency switching applications, the SiZF4800LDT offers a low on-resistance times total gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 131mΩ*nC.
The device’s flip-chip technology enhances thermal dissipation, resulting in 54 % lower thermal resistance compared to competing MOSFETs. The SiZF4800LDT’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36 A, which is 38 % higher than the closest competing device. The MOSFET features a unique pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimize parasitic inductance. The SiZF4800LDT is 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free.
Competitor Comparison Table:
| Part number | SiZF4800LDT (New) | Competitor | SiZF4800LDT Performance improved | ||
| Package | PowerPAIR 3x3FS | PowerPAIR 3x3FS | |||
| Dimensions (mm) | 3.3 x 3.3 x 0.75 | 3.3 x 3.3 x 0.75 | - | ||
| Configuration | Symmetric dual | Symmetric dual | - | ||
| VDS (V) | 80 | 80 | - | ||
| VGS (V) | ± 20 | ± 20 | - | ||
| RDS(on) (mΩ) @ 4.5 VGS | Typ. | 18.5 | 22 | +16 | % |
| Max. | 23.8 | 29 | +18 | % | |
| Qg (nC) @ 4.5 VGS | Typ. | 7.1 | 6.0 | - | |
| FOM | - | 131 | 132 | +1 | % |
| ID (A) | Max. | 36 | 26 | +38 | % |
| RthJC (C/W) | Max. | 2.2 | 4.8 | +54 | % |
Samples and production quantities of the SiZF4800LDT are available now, with lead times of 26 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.™ Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech™ is a trademark of Vishay Intertechnology. PowerPAIR, PowerPAK and TrenchFET are registered trademarks of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product datasheet:
http://www.vishay.com/ppg?62251 (SiZF4800LDT)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720315108938
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
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