Vishay Intertechnology 60 V and 80 V N-Channel MOSFETs in PowerPAK® 8x8L Deliver Best in Class RDS(ON) Down to 0.65 mΩ

Rhea-AI Summary

Vishay Intertechnology has launched two new n-channel TrenchFET^® MOSFETs: SiJH600E and SiJH800E, designed for enhanced power density, efficiency, and board-level reliability in telecom and industrial applications. The devices feature 60 V and 80 V ratings, ultra low on-resistance of 0.65 mΩ and 1.22 mΩ, and operate at temperatures up to +175 °C. Their compact PowerPAK 8x8L package is 60% smaller than standard D²PAK, supporting mechanical stress relief. These advances result in significant energy savings and improved thermal performance.

Positive

• Launch of SiJH600E and SiJH800E MOSFETs enhances product line.
• Ultra low on-resistance of 0.65 mΩ (SiJH600E) and 1.22 mΩ (SiJH800E) boosts efficiency.
• High continuous drain currents of 373 A and 288 A improve power density.
• Compact size (60% smaller than D²PAK) allows space-saving solutions.
• High temperature operation of +175 °C ensures reliability in demanding applications.

Negative

• None.

Compact Devices Feature Bond Wireless Construction and Gullwing Leads for Increased Board-Level Reliability

MALVERN, Pa., Jan. 31, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new n-channel TrenchFET^® MOSFETs that increase power density, efficiency, and board-level reliability in telecom and industrial applications. To achieve these design goals, the 60 V SiJH600E and 80 V SiJH800E combine ultra low on-resistance with high temperature operation to +175 °C and high continuous drain current handling. Their space-saving PowerPAK^® 8x8L package promotes board-level reliability with its bond wireless construction and gullwing leads for mechanical stress relief.

The ultra low on-resistance of the SiJH600E and SiJH800E — 0.65 mΩ and 1.22 mΩ typical at 10 V, respectively — is 54 % and 52 % lower than same-generation devices in the PowerPAK SO-8. This translates into energy savings by minimizing power losses due to conduction.

For increased power density, the SiJH600E and SiJH800E deliver continuous drain current of 373 A and 288 A, respectively, in a package that is 60 % smaller and 57 % thinner than the D²PAK. To save board space, each MOSFET can also be used in place of two PowerPAK SO-8 devices in parallel.

Device Specification Table:

Part Number	VDS (V)	ID (A)	RDS(ON) @ 10 V (mΩ)	Rthjc (°C/W)
SiJH600E	60	373	0.65	0.36
SiJH800E	80	288	1.22	0.36

With high temperature operation to +175 °C, the Vishay Siliconix devices released today provide ruggedness and reliability for synchronous rectification in power supplies, motor drive control, battery management, and power tool applications. Lead (Pb)-free, halogen-free, and RoHS-compliant, the devices are 100 % Rg and UIS tested.

Package Comparison Table:

Package	Length (mm)	Width (mm)	Thickness (mm)	Dimension (LxW mm²)
PowerPAK 8x8L	8.0	7.9	1.8	63.2
D²PAK (TO-263)	15.2	10	4.4	152

Samples of the SiJH600E and SiJH800E are available now. Information on production lead times and quantities is available from Vishay or our distribution partners.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.™ Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech™ is a trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

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Link to product datasheets:
https://www.vishay.com/ppg?63073 (SIJH600E)
https://www.vishay.com/ppg?63064 (SIJH800E)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720296190462

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com

FAQ

What are the key features of Vishay's new SiJH600E and SiJH800E MOSFETs?

The SiJH600E and SiJH800E MOSFETs feature ultra low on-resistance of 0.65 mΩ and 1.22 mΩ, high continuous drain currents of 373 A and 288 A, and operate at temperatures up to +175 °C.

How do the new MOSFETs from Vishay compare in size to traditional packages?

The new MOSFETs are 60% smaller and 57% thinner than standard D²PAK packages, allowing for greater design flexibility and space savings.

What applications are targeted by Vishay's new MOSFETs?

The SiJH600E and SiJH800E MOSFETs are designed for telecom, industrial applications, synchronous rectification in power supplies, motor drive control, battery management, and power tools.

When were the new MOSFETs launched by Vishay Intertechnology?

The new SiJH600E and SiJH800E MOSFETs were launched on January 31, 2022.

What is the significance of the low on-resistance in Vishay's MOSFETs?

The ultra low on-resistance significantly reduces power losses due to conduction, resulting in energy savings and improved efficiency in electronic designs.