Vishay Intertechnology 30 V N-Channel MOSFET With Source Flip Technology Delivers Best in Class RDS(ON) Down to 0.71 mΩ in PowerPAK® 1212-F
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Insights
The introduction of Vishay Intertechnology's new 30 V n-channel TrenchFET Gen V power MOSFET represents a significant advancement in semiconductor technology, particularly for power conversion applications. The device's enhanced power density and thermal performance are critical for industries that require efficient energy management and miniaturization of components.
From a technical perspective, the source flip technology and the center gate design are noteworthy innovations. These features enable more efficient thermal dissipation and facilitate the parallelization of devices, respectively. The improvement in the figure of merit (FOM) by 35% over previous generations indicates a substantial enhancement in the device's efficiency, which could lead to reduced operational costs and improved performance for end products.
For the business sector, this product launch could potentially lead to increased market share in the semiconductor industry for Vishay. The ability to offer a product with lower on-resistance and better thermal performance could make Vishay a preferred supplier for manufacturers in the industrial, computer, consumer and telecom sectors. However, the 26-week lead time for production quantities could impact the speed at which these benefits are realized.
The announcement of the SiSD5300DN with its improved specifications is poised to have an impact on supply chain dynamics within the semiconductor industry. A lead time of 26 weeks is indicative of the complex manufacturing processes involved in producing such advanced components. This timeframe may affect the ability of companies to quickly integrate the new MOSFET into their products, potentially leading to planning challenges for those dependent on rapid iteration and product development cycles.
Additionally, the device's compliance with RoHS and being halogen-free aligns with the increasing demand for environmentally friendly components, which could influence supply chain decisions and procurement strategies. Companies may need to reassess their suppliers to meet sustainability goals and Vishay's commitment to these standards could provide them with a competitive edge.
The release of the SiSD5300DN could have financial implications for Vishay Intertechnology and its stakeholders. The stock market typically reacts to product launches that signify technological leadership, especially in high-growth sectors like computing and telecommunications. Vishay's ability to offer a product with lower on-resistance and improved thermal performance is likely to be well-received by investors, as it suggests potential for increased sales and market penetration.
However, investors should monitor the company's ability to scale production and meet demand, especially given the noted lead time. The financial impact will also depend on the adoption rate of the new MOSFET by manufacturers and the competitive response from other semiconductor companies. It is crucial to analyze future financial statements and earnings calls for mentions of the SiSD5300DN's sales performance and its contribution to Vishay's overall revenue growth.
Device Offers High Power Density and Improved Thermal Performance in 3.3 mm x 3.3 mm PowerPAK® 1212-F Package With Center Gate Design
MALVERN, Pa., Feb. 14, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and enhanced thermal performance for industrial, computer, consumer, and telecom applications. Featuring source flip technology in the 3.3 mm by 3.3 mm PowerPAK® 1212-F package, the Vishay Siliconix SiSD5300DN provides best in class on-resistance of 0.71 mΩ at 10 V and on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 42 mΩ*nC.
Occupying the same footprint as the PowerPAK 1212-8S, the device released today offers 18 % lower on-resistance to increase power density, while its source flip technology reduces thermal resistance by 63 °C/W to 56 °C/W. In addition, the SiSD5300DN’s FOM represents a 35 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
PowerPAK 1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimizes the extent of the switching area, which helps to reduce the impact of trace noise. In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36 mm² to 4.13 mm², enabling a commensurate improvement in thermal performance. The PowerPAK 1212-F’s center gate design also simplifies parallelization of multiple devices on a single-layer PCB.
The source flip PowerPAK 1212-F package of the SiSD5300DN is especially suitable for applications such as secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. Typical end products include welding equipment and power tools; servers, edge devices, supercomputers, and tablets; lawnmowers and cleaning robots; and radio base stations.
The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Key Specification Table:
| PowerPAK 1212-F | PowerPAK 1212-8S |
| Package size: 3.3 mm x 3.3 mm | Package size: 3.3 mm x 3.3 mm |
| Source pad dimension: 4.13 mm² | Source pad dimension: 0.36 mm² |
| Thermal resistance: 56 °C/W | Thermal resistance: 63 °C/W |
| Lowest available on-resistance in Gen V technology: SiSD5300DN: 0.87 mΩ (maximum) | Lowest available on-resistance in Gen V technology: SiSS54DN: 1.06 mΩ (maximum) |
Samples and production quantities of the SiSD5300DN are available now, with lead times of 26 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech®. Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Links to product datasheet:
http://www.vishay.com/ppg?62220 (SiSD5300DN)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720314591460
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
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