STMicroelectronics unveils new generation of silicon carbide power technology tailored for next-generation EV traction inverters
STMicroelectronics has unveiled its fourth generation STPOWER silicon carbide (SiC) MOSFET technology, optimized for electric vehicle (EV) traction inverters. The new technology offers improved power efficiency, power density, and robustness, with plans to introduce multiple SiC innovations through 2027. The Generation 4 technology will be available in 750V and 1200V classes, bringing SiC advantages to mid-size and compact EVs.
Key features include:
- Smaller die size (12-15% reduction compared to Generation 3)
- Lower on-resistance (RDS(on))
- Faster switching speeds
- Enhanced robustness in Dynamic Reverse Bias conditions
ST aims to complete qualification of the 1200V class in Q1 2025, with commercial availability to follow. The technology is also suitable for high-power industrial applications, including solar inverters, energy storage, and datacenters.
STMicroelectronics ha presentato la sua quarta generazione di tecnologia MOSFET in carburo di silicio (SiC) STPOWER, ottimizzata per inverter di trazione per veicoli elettrici (EV). La nuova tecnologia offre una migliore efficienza energetica, densità di potenza e robustezza, con piani per introdurre numerose innovazioni SiC entro il 2027. La tecnologia di quarta generazione sarà disponibile nelle classi 750V e 1200V, portando i vantaggi del SiC ai veicoli elettrici di medie e compatte dimensioni.
Le caratteristiche principali includono:
- Dimensione del die più piccola (riduzione del 12-15% rispetto alla generazione 3)
- Resistenza ON più bassa (RDS(on))
- Velocità di commutazione più elevate
- Robustezza migliorata in condizioni di Bias Inverso Dinamico
ST mira a completare la qualificazione della classe 1200V nel primo trimestre del 2025, con la disponibilità commerciale a seguire. La tecnologia è anche adatta per applicazioni industriali ad alta potenza, inclusi inverter solari, sistemi di stoccaggio energetico e data center.
STMicroelectronics ha presentado su cuarta generación de tecnología MOSFET de carburo de silicio (SiC) STPOWER, optimizada para inversores de tracción de vehículos eléctricos (EV). La nueva tecnología ofrece una mejor eficiencia energética, densidad de potencia y robustez, con planes para introducir múltiples innovaciones de SiC hasta 2027. La tecnología de la Generación 4 estará disponible en las clases de 750V y 1200V, llevando las ventajas del SiC a vehículos eléctricos de tamaño medio y compacto.
Las características clave incluyen:
- Tamaño de chip más pequeño (reducción del 12-15% en comparación con la Generación 3)
- Menor resistencia en estado ON (RDS(on))
- Mayor velocidad de conmutación
- Robustez mejorada en condiciones de Inversión Dinámica de Sesgo
ST tiene como objetivo completar la calificación de la clase de 1200V en el primer trimestre de 2025, con la disponibilidad comercial que seguirá. La tecnología también es adecuada para aplicaciones industriales de alta potencia, incluidos inversores solares, almacenamiento de energía y centros de datos.
STMicroelectronics는 전기차(EV) 트랙션 인버터에 최적화된 4세대 STPOWER 실리콘 카바이드(SiC) MOSFET 기술을 공개했습니다. 새로운 기술은 전력 효율성, 전력 밀도 및 견고성을 향상시키며, 2027년까지 여러 개의 SiC 혁신을 도입할 계획입니다. 4세대 기술은 750V 및 1200V 클래스로 제공되어 중형 및 콤팩트 EV에 SiC의 이점을 제공합니다.
주요 특징은 다음과 같습니다:
- 더 작은 다이 크기 (3세대 대비 12-15% 감소)
- 더 낮은 온 저항 (RDS(on))
- 더 빠른 스위칭 속도
- 다이나믹 리버스 바이어스 조건에서 향상된 견고성
ST는 2025년 1분기까지 1200V 클래스의 자격을 완료할 계획이며, 상업적 가용성은 이후에 제공될 예정입니다. 이 기술은 태양광 인버터, 에너지 저장 및 데이터 센터를 포함한 고출력 산업 응용 분야에도 적합합니다.
STMicroelectronics a dévoilé sa quatrième génération de technologie MOSFET en carbure de silicium (SiC) STPOWER, optimisée pour les inverseurs de traction de véhicules électriques (EV). La nouvelle technologie offre une efficacité énergétique, une densité de puissance et une robustesse améliorées, avec des projets d'introduire plusieurs innovations SiC d'ici 2027. La technologie de la génération 4 sera disponible dans les classes 750V et 1200V, apportant les avantages du SiC aux EV de taille moyenne et compacte.
Les caractéristiques clés incluent :
- Taille de die réduite (réduction de 12-15% par rapport à la génération 3)
- Résistance ON plus faible (RDS(on))
- Vitesse de commutation plus rapide
- Robustesse améliorée dans des conditions de Polarité Inversée Dynamique
ST vise à terminer la qualification de la classe 1200V au premier trimestre 2025, avec une disponibilité commerciale qui suivra. La technologie est également adaptée pour des applications industrielles à haute puissance, y compris les onduleurs solaires, le stockage d'énergie et les centres de données.
STMicroelectronics hat seine vierte Generation der STPOWER Siliziumkarbid (SiC) MOSFET-Technologie vorgestellt, die für Traction-Inverter von Elektrofahrzeugen (EV) optimiert ist. Die neue Technologie bietet verbesserte Stromeffizienz, Leistungsdichte und Robustheit, mit Plänen, bis 2027 mehrere SiC-Innovationen einzuführen. Die Technologie der Generation 4 wird in den Klassen 750V und 1200V verfügbar sein und bringt die Vorteile von SiC in mittelgroße und kompakte EVs.
Die wichtigsten Merkmale sind:
- Kleinere Die-Größe (12-15% Reduzierung im Vergleich zur Generation 3)
- Niedrigere Durchgangswiderstände (RDS(on))
- Schnellere Schaltgeschwindigkeiten
- Erhöhte Robustheit unter dynamischen Rückwärtsbias-Bedingungen
ST plant, die Qualifizierung der 1200V-Klasse im ersten Quartal 2025 abzuschließen, mit anschließender kommerzieller Verfügbarkeit. Die Technologie ist auch für leistungsstarke industrielle Anwendungen geeignet, einschließlich Solarwechselrichtern, Energiespeicher und Rechenzentren.
- Introduction of fourth generation STPOWER SiC MOSFET technology with improved efficiency and performance
- Expansion of SiC technology to mid-size and compact EVs, potentially increasing market adoption
- 12-15% reduction in average die size compared to Generation 3, allowing for more compact designs
- Planned introduction of further advanced SiC technology innovations through 2027
- Vertical integration strategy with new SiC substrate manufacturing facility in Catania starting production in 2026
- None.
Insights
STMicroelectronics' unveiling of its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology marks a significant advancement in power semiconductor technology. This new generation brings substantial improvements in power efficiency, power density and robustness, particularly optimized for EV traction inverters.
Key technical advancements include:
- Lower on-resistance (RDS(on)), reducing conduction losses
- Faster switching speeds, decreasing switching losses
- Enhanced robustness in Dynamic Reverse Bias (DRB) conditions
12-15% smaller die size compared to Generation 3
These improvements will enable more compact and efficient power converters, important for EVs and industrial applications. The planned introduction of 750V and 1200V classes by 2025 will cater to both 400V and 800V EV systems, potentially accelerating the adoption of SiC technology in mid-size and compact EVs.
STMicroelectronics' new SiC MOSFET technology positions the company to capitalize on the growing EV and industrial power markets. The EV market, in particular, presents a significant opportunity as automakers seek to improve efficiency and reduce costs to achieve mass-market adoption.
Key market implications:
- Expansion of SiC technology from premium to mid-size and compact EVs
- Potential for increased market share in the competitive SiC power device sector
- Diversification into high-growth industrial applications (solar inverters, energy storage, datacenters)
ST's vertically integrated manufacturing strategy, including the upcoming SiC substrate facility in Catania, strengthens its supply chain resilience. This could be a important differentiator in securing long-term contracts with major EV manufacturers. The company's roadmap through 2027, including a promised "radical innovation," suggests a strong commitment to maintaining technological leadership in this space.
STMicroelectronics unveils new generation of silicon carbide power technology tailored for next-generation EV traction inverters
- Smaller, more efficient products to ramp-up in volumes through 2025 across 750V and 1200V classes, will bring the advantages of silicon carbide beyond premium models to mid-size and compact electric vehicles.
- ST plans to introduce multiple silicon carbide technology innovations through 2027, including a radical innovation.
Geneva, Switzerland, September 24, 2024 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, is introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. The Generation 4 technology brings new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains. The company plans to introduce further advanced SiC technology innovations through 2027 as a commitment to innovation.
“STMicroelectronics is committed to driving the future of electric mobility and industrial efficiency through our cutting-edge silicon carbide technology. We continue to advance SiC MOSFET technology with innovations in the device, advanced packages, and power modules,” said Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors Group. "Together with our vertically integrated manufacturing strategy, we are delivering industry leading SiC technology performance and a resilient supply chain to meet the growing needs of our customers and contribute to a more sustainable future."
As the market leader in SiC power MOSFETs, ST is driving further innovation to exploit SiC’s higher efficiency and greater power density compared to silicon devices. This latest generation of SiC devices is conceived to benefit future EV traction inverter platforms, with further advances in size and energy-saving potential. While the EV market continues to grow, challenges remain to achieve widespread adoption and car makers are looking to deliver more affordable electric cars. 800V EV bus drive systems based on SiC have enabled faster charging and reduced EV weight, allowing car makers to produce vehicles with longer driving ranges for premium models. ST’s new SiC MOSFET devices, which will be made available in 750V and 1200V classes, will improve energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs — key segments to help achieve mass market adoption. The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications.
Availability
ST has completed qualification of the 750V class of the fourth generation SiC technology platform and expects to complete qualification of the 1200V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750V and 1200V will follow, allowing designers to address applications operating from standard AC-line voltages up to high-voltage EV batteries and chargers.
Use cases
ST's Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range compared to silicon-based solutions. These benefits are critical for achieving widespread adoption of EVs and leading EV manufacturers are engaged with ST to introduce the Generation 4 SiC technology into their vehicles, enhancing performance and energy efficiency. While the primary application is EV traction inverters, ST's Generation 4 SiC MOSFETs are also suitable for use in high-power industrial motor drives, benefiting from the devices' improved switching performance and robustness. This results in more efficient and reliable motor control, reducing energy consumption and operational costs in industrial settings. In renewable energy applications, the Generation 4 SiC MOSFETs enhance the efficiency of solar inverters and energy storage systems, contributing to more sustainable and cost-effective energy solutions. Additionally, these SiC MOSFETs can be utilized in power supply units for server datacenters for AI, where their high efficiency and compact size are crucial for the significant power demands and thermal management challenges.
Roadmap
To accelerate the development of SiC power devices through its vertically integrated manufacturing strategy, ST is developing multiple SiC technology innovations in parallel to advance power device technologies over the next three years. The fifth generation of ST SiC power devices will feature an innovative high-power density technology based on planar structure. ST is at the same time developing a radical innovation that promises outstanding on-resistance RDS(on) value at high temperatures and further RDS(on) reduction, compared to existing SiC technologies.
ST will attend ICSCRM 2024, the annual scientific and industry conference exploring the newest achievements in SiC and other wide bandgap semiconductors. The event, from September 29 to October 04, 2024, in Raleigh, North Carolina will include ST technical presentations and an industrial keynote on ‘High volume industrial environment for leading edge technologies in SiC’. Find out more here: ICSCRM 2024 - STMicroelectronics.
Technical Note to Editors
The fourth generation SiC MOSFETs from STMicroelectronics represent a significant leap forward in power conversion technology compared to previous generations. These devices are engineered to deliver superior performance and robustness, addressing the stringent demands of future EV traction inverters. The Generation 4 SiC MOSFETs feature a significantly lower on-resistance (RDS(on)) measured against prior generations, minimizing conduction losses, and enhancing overall system efficiency. They offer faster switching speeds, which translate to lower switching losses, crucial for high-frequency applications and enabling more compact and efficient power converters. The Generation 4 technology provides extra robustness in Dynamic Reverse Bias (DRB) conditions, exceeding the AQG324 automotive standard, ensuring reliable operation under harsh conditions.
With Generation 4 ST continues to deliver outstanding RDS(on) x die-area figure of merit to ensure high current-handling capability with minimal losses. The average die size of Generation 4 devices is 12
As an industry leader in this technology, ST has already supplied STPOWER SiC devices for more than five million passenger cars worldwide in a range of EV applications including traction inverter, OBC (onboard charger), DC-DC converter, EV charging station, and e-compressor application, significantly enhancing the performance, efficiency, and range of NEVs. ST’s SiC strategy, as an integrated device manufacturer (IDM), ensures quality and security of supply to serve carmakers’ strategies for electrification. With the recently announced fully vertically integrated SiC substrate manufacturing facility in Catania, expected to start production in 2026, ST is moving quickly to support the rapid market transition towards e-mobility and higher efficiency in industrial applications.
For further information about ST’s SiC portfolio, please visit www.st.com/sic-mosfets
About STMicroelectronics
At ST, we are over 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are committed to achieving our goal to become carbon neutral on scope 1 and 2 and partially scope 3 by 2027. Further information can be found at www.st.com.
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