onsemi to Acquire Silicon Carbide JFET Technology to Enhance Its Power Portfolio for AI Data Centers
onsemi has announced an agreement to acquire Qorvo's Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, for $115 million in cash. The acquisition is expected to expand onsemi's market opportunity by $1.3 billion within 5 years.
The deal will enhance onsemi's EliteSiC power portfolio, specifically addressing high energy efficiency needs in AI data center power supply units. SiC JFETs offer the lowest on-resistance per chip area, using less than half of any other technology, and are compatible with off-the-shelf drivers. These benefits enable faster development, reduced energy consumption, and lower system costs.
The transaction is expected to close in Q1 2025, subject to customary conditions.
onsemi ha annunciato un accordo per acquisire il business della tecnologia Transistor a Giunzione in Carburo di Silicio (SiC JFET) di Qorvo, comprensivo della controllata United Silicon Carbide, per 115 milioni di dollari in contanti. Si prevede che questa acquisizione espanda le opportunità di mercato di onsemi di 1,3 miliardi di dollari in 5 anni.
L'accordo potenzierà il portafoglio di potenza EliteSiC di onsemi, in particolare rispondendo alle esigenze di alta efficienza energetica delle unità di alimentazione dei centri dati AI. I SiC JFET offrono la resistenza on più bassa per area del chip, utilizzando meno della metà di qualsiasi altra tecnologia, e sono compatibili con i driver standard. Questi vantaggi consentono uno sviluppo più rapido, un consumo energetico ridotto e costi di sistema inferiori.
Si prevede che la transazione si chiuda nel primo trimestre del 2025, soggetto a condizioni abituali.
onsemi ha anunciado un acuerdo para adquirir el negocio de tecnología de Transistor de Efecto de Campo de Unión de Carburo de Silicio (SiC JFET) de Qorvo, incluyendo la subsidiaria United Silicon Carbide, por 115 millones de dólares en efectivo. Se espera que esta adquisición amplíe la oportunidad de mercado de onsemi en 1.3 mil millones de dólares en 5 años.
El acuerdo mejorará el portafolio de potencia EliteSiC de onsemi, abordando específicamente las necesidades de alta eficiencia energética en las unidades de suministro de energía para centros de datos de IA. Los SiC JFET ofrecen la más baja resistencia on por área de chip, utilizando menos de la mitad de cualquier otra tecnología, y son compatibles con controladores disponibles comercialmente. Estos beneficios permiten un desarrollo más rápido, un menor consumo de energía y costos de sistema reducidos.
Se espera que la transacción se cierre en el primer trimestre de 2025, sujeto a condiciones habituales.
onsemi는 Qorvo의 실리콘 카바이드 접합 전계 효과 트랜지스터 (SiC JFET) 기술 사업을 1억 1500만 달러에 현금으로 인수하는 계약을 발표했습니다. 이번 인수는 5년 내 13억 달러의 시장 기회를 확장할 것으로 예상됩니다.
이번 계약은 고효율 에너지 수요를 충족하기 위해 onsemi의 EliteSiC 전력 포트폴리오를 강화할 것입니다. SiC JFET는 칩 면적당 가장 낮은 온 저항을 제공하며, 다른 어떤 기술보다도 절반 미만을 사용하고, 기성품 드라이버와 호환됩니다. 이러한 이점은 더 빠른 개발, 감소된 에너지 소비 및 낮은 시스템 비용을 가능하게 합니다.
이번 거래는 일반적인 조건에 따라 2025년 1분기에 완료될 것으로 예상됩니다.
onsemi a annoncé un accord pour acquérir l'activité technologique de Transistors à Effet de Champ à Jonction en Carbure de Silicium (SiC JFET) de Qorvo, y compris la filiale United Silicon Carbide, pour 115 millions de dollars en espèces. Cette acquisition devrait élargir les opportunités de marché d'onsemi de 1,3 milliard de dollars d'ici 5 ans.
Cette opération va renforcer le portefeuille de puissance EliteSiC d'onsemi, répondant spécifiquement aux besoins d'efficacité énergétique élevée dans les unités d'alimentation des centres de données en IA. Les SiC JFET offrent la plus faible résistance on par surface de puce, utilisant moins de la moitié de toute autre technologie, et sont compatibles avec des pilotes standards. Ces avantages permettent un développement plus rapide, une consommation d'énergie réduite et des coûts systèmes inférieurs.
La transaction devrait se clôturer au premier trimestre 2025, sous réserve des conditions habituelles.
onsemi hat eine Vereinbarung bekannt gegeben, das Technologiebusiness von Qorvos Siliziumcarbid-Junction-Feldeffekttransistor (SiC JFET) zu übernehmen, einschließlich der Tochtergesellschaft United Silicon Carbide, für 115 Millionen Dollar in bar. Es wird erwartet, dass die Übernahme die Marktchancen von onsemi um 1,3 Milliarden Dollar innerhalb von 5 Jahren erweitert.
Der Deal wird das EliteSiC-Power-Portfolio von onsemi verbessern, insbesondere um die Bedürfnisse an einer hohen Energieeffizienz in den Stromversorgungen von KI-Rechenzentren zu adressieren. SiC JFETs bieten den niedrigsten Einschaltwiderstand pro Chipfläche, nutzen weniger als die Hälfte jeder anderen Technologie und sind mit gängigen Treibern kompatibel. Diese Vorteile ermöglichen eine schnellere Entwicklung, einen geringeren Energieverbrauch und niedrigere Systemkosten.
Die Transaktion wird voraussichtlich im ersten Quartal 2025 abgeschlossen, vorbehaltlich der üblichen Bedingungen.
- Expected market opportunity expansion of $1.3 billion within 5 years
- Technology acquisition enhances existing EliteSiC power portfolio
- SiC JFETs offer superior performance with lowest on-resistance per chip area
- Compatible with existing off-the-shelf drivers, reducing development costs
- Cash outlay of $115 million required for acquisition
- Deal completion delayed until Q1 2025
Insights
The
The timing aligns with the exponential growth in AI computing demands, positioning onsemi to capture market share in critical power supply components. The technology's ability to reduce energy consumption while improving performance addresses a key pain point for data center operators facing rising energy costs. The deal's structure, using cash, indicates strong financial health and minimal impact on the balance sheet given onsemi's market cap of
The acquisition of SiC JFET technology is technically significant as it addresses important power efficiency challenges in AI data centers. The technology's key advantage lies in its superior on-resistance per chip area, requiring less than half the space of competing solutions. This translates to better power density and thermal performance, critical factors in data center operations where space and cooling costs are major concerns.
The compatibility with existing silicon-based transistor drivers is particularly valuable, as it allows for faster market adoption without requiring extensive redesigns of current systems. This technological advantage positions onsemi well in the emerging markets for EV battery disconnects and solid-state circuit breakers, where high voltage handling capability is essential.
This acquisition strengthens onsemi's competitive position in the rapidly growing SiC power semiconductor market. The timing is strategic as AI infrastructure buildout is accelerating globally, driving demand for more efficient power solutions. The ability to address both AI data center power supplies and emerging EV applications diversifies the company's market exposure while leveraging similar core technology.
The projected
Acquisition of SiC JFET business and United Silicon Carbide subsidiary from Qorvo expected to expand company’s market opportunity by
SiC JFETs offer the lowest on-resistance per chip area, using less than half of any other technology. They also allow for the use of typical off-the-shelf drivers, which have been deployed with silicon-based transistors for decades. Together, these benefits result in faster development, reduced energy consumption and lower system costs, providing significant value to power supply designers and data center operators.
“As AI workloads become more complex and energy-intensive, the importance of reliable SiC JFETs that deliver high energy efficiency and are able to handle high voltages will continue to increase,” said Simon Keeton, group president and general manager of the Power Solutions Group, onsemi. “With the addition of Qorvo’s industry leading SiC JFET technology, our intelligent power portfolio offers our customers yet another solution to optimize energy consumption and increase power density.”
The transaction is subject to customary closing conditions and is expected to be finalized in the first quarter of 2025.
More Information:
About onsemi
onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner and smarter world. onsemi is recognized as a Fortune 500® company and included in the Nasdaq-100 Index® and S&P 500® index. Learn more about onsemi at www.onsemi.com.
onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders.
Caution Regarding Forward-Looking Statements:
This press release includes “forward-looking statements,” as that term is defined in Section 27A of the Securities Act of 1933, as amended, and Section 21E of the Securities Exchange Act of 1934, as amended. All statements, other than statements of historical facts, included or incorporated in this press release could be deemed forward-looking statements, particularly statements about the impact of the announced acquisition of the SiC JFET technology division. Forward-looking statements are often characterized by the use of words such as “believes,” “estimates,” “expects,” “projects,” “may,” “will,” “intends,” “plans,” “anticipates,” “should” or similar expressions or by discussions of strategy, plans or intentions. All forward-looking statements in this document are made based on our current expectations, forecasts, estimates and assumptions and involve risks, uncertainties and other factors that could cause results or events to differ materially from those expressed in the forward-looking statements. Certain factors that could affect our future results or events are described under Part I, Item 1A “Risk Factors” in the 2023 Annual Report on Form 10-K filed with the Securities and Exchange Commission (“SEC”) on February 5, 2024 (the “2023 Form 10-K”) and from time to time in our other SEC reports. Readers are cautioned not to place undue reliance on forward-looking statements. We assume no obligation to update such information, which speaks only as of the date made, except as may be required by law. Investing in our securities involves a high degree of risk and uncertainty, and you should carefully consider the trends, risks and uncertainties described in this document, our 2023 Form 10-K and other reports filed with or furnished to the SEC before making any investment decision with respect to our securities. If any of these trends, risks or uncertainties actually occurs or continues, our business, financial condition or operating results could be materially adversely affected, the trading prices of our securities could decline, and you could lose all or part of your investment. All forward-looking statements attributable to us or persons acting on our behalf are expressly qualified in their entirety by this cautionary statement.
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Krystal Heaton
Director, Head of Public Relations
onsemi
(480) 242-6943
Krystal.Heaton@onsemi.com
Parag Agarwal
Vice President - Investor Relations & Corporate Development
onsemi
(602) 244-3437
investor@onsemi.com
Source: onsemi
FAQ
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