Samsung Electronics and Nova Jointly awarded the Vladimir Ukraintsev Award at the SPIE Advanced Lithography conference
Nova (Nasdaq: NVMI) and Samsung Electronics have been jointly awarded the Vladimir Ukraintsev Award for 'Collaborations in Metrology' at SPIE's 2024 Advanced Lithography + Patterning Conference. The recognition comes for their co-authored paper on chalcogenide alloy layer monitoring using advanced technologies.
The award-winning research demonstrates a novel approach to monitoring the thickness of chalcogenide Ovonic Threshold Switching (OTS) layer, a critical parameter in Selector-Only Memory (SOM) process control. The solution combines Spectral Interferometry, Raman Spectroscopy, and Machine Learning algorithms to achieve precise monitoring and control of the chalcogenide layer.
Dr. Shay Wolfling, Nova's Chief Technology Officer, highlighted how this collaboration demonstrates Nova's ability to leverage innovative technologies for advanced semiconductor device process control.
Nova (Nasdaq: NVMI) e Samsung Electronics sono stati premiati congiuntamente con il Premio Vladimir Ukraintsev per le 'Collaborazioni in Metrologia' durante la Conferenza SPIE 2024 sulla Litografia Avanzata + Patterning. Il riconoscimento è stato conferito per il loro articolo co-autore riguardante il monitoraggio degli strati di lega di calco-genide utilizzando tecnologie avanzate.
La ricerca premiata dimostra un approccio innovativo per il monitoraggio dello spessore dello strato di Chalcogenide Ovonic Threshold Switching (OTS), un parametro critico nel controllo del processo della Selector-Only Memory (SOM). La soluzione combina Interferometria Spettrale, Spettroscopia Raman e algoritmi di Apprendimento Automatico per ottenere un monitoraggio e un controllo precisi dello strato di calco-genide.
Il Dr. Shay Wolfling, Chief Technology Officer di Nova, ha sottolineato come questa collaborazione dimostri la capacità di Nova di sfruttare tecnologie innovative per il controllo avanzato dei processi dei dispositivi semiconduttori.
Nova (Nasdaq: NVMI) y Samsung Electronics han sido galardonados conjuntamente con el Premio Vladimir Ukraintsev por 'Colaboraciones en Metrología' en la Conferencia de Litografía Avanzada + Patrones de SPIE 2024. El reconocimiento se otorga por su artículo coautorado sobre el monitoreo de capas de aleación de calco-genido utilizando tecnologías avanzadas.
La investigación premiada demuestra un enfoque novedoso para monitorizar el grosor de la capa de Chalcogenide Ovonic Threshold Switching (OTS), un parámetro crítico en el control del proceso de Selector-Only Memory (SOM). La solución combina Interferometría Espectral, Espectroscopía Raman y algoritmos de Aprendizaje Automático para lograr un monitoreo y control precisos de la capa de calco-genido.
El Dr. Shay Wolfling, Director de Tecnología de Nova, destacó cómo esta colaboración demuestra la capacidad de Nova para aprovechar tecnologías innovadoras para el control avanzado de procesos de dispositivos semiconductores.
노바 (Nasdaq: NVMI)와 삼성전자는 SPIE 2024 고급 리소그래피 + 패터닝 컨퍼런스에서 '계측 분야의 협력'에 대해 블라디미르 우크라인체프 상을 공동 수상했습니다. 이 인정은 첨단 기술을 사용한 칼코겐화합물 합금 층 모니터링에 대한 공동 저자 논문에 대해 주어졌습니다.
수상한 연구는 선택기 전용 메모리 (SOM) 프로세스 제어에서 중요한 매개변수인 칼코겐화합물 오보닉 스레숄드 스위칭 (OTS) 층의 두께를 모니터링하는 새로운 접근 방식을 보여줍니다. 이 솔루션은 스펙트럴 간섭계, 라만 분광법 및 기계 학습 알고리즘을 결합하여 칼코겐화합물 층의 정밀한 모니터링 및 제어를 달성합니다.
노바의 최고 기술 책임자(CTO)인 셰이 울플링 박사는 이 협력이 노바가 첨단 반도체 장치 프로세스 제어를 위해 혁신적인 기술을 활용할 수 있는 능력을 보여준다고 강조했습니다.
Nova (Nasdaq: NVMI) et Samsung Electronics ont été conjointement récompensés par le Prix Vladimir Ukraintsev pour les 'Collaborations en Métrologie' lors de la Conférence SPIE 2024 sur la Lithographie Avancée + le Pattemage. Cette reconnaissance est attribuée pour leur article coécrit sur le suivi des couches d'alliage de chalcogénure utilisant des technologies avancées.
La recherche primée démontre une approche novatrice pour surveiller l'épaisseur de la couche de Chalcogénure Ovonic Threshold Switching (OTS), un paramètre critique dans le contrôle des processus de la Mémoire Sélecteur-Only (SOM). La solution combine Interférométrie Spectrale, Spectroscopie Raman et algorithmes d'Apprentissage Automatique pour atteindre un suivi et un contrôle précis de la couche de chalcogénure.
Dr. Shay Wolfling, Directeur Technique de Nova, a souligné comment cette collaboration démontre la capacité de Nova à tirer parti des technologies innovantes pour le contrôle avancé des processus des dispositifs semi-conducteurs.
Nova (Nasdaq: NVMI) und Samsung Electronics wurden gemeinsam mit dem Vladimir Ukraintsev Award für 'Zusammenarbeit in der Metrologie' auf der SPIE 2024 Konferenz für fortgeschrittene Lithografie + Musterung ausgezeichnet. Die Auszeichnung erfolgt für ihr gemeinsames Paper über das Monitoring von Chalcogenidlegierungen unter Verwendung fortschrittlicher Technologien.
Die preisgekrönte Forschung zeigt einen neuartigen Ansatz zur Überwachung der Dicke der Chalcogenid Ovonic Threshold Switching (OTS) Schicht, einem kritischen Parameter in der Prozesskontrolle von Selector-Only Memory (SOM). Die Lösung kombiniert Spektrale Interferometrie, Raman-Spektroskopie und maschinelles Lernen, um eine präzise Überwachung und Kontrolle der Chalcogenidschicht zu erreichen.
Dr. Shay Wolfling, Chief Technology Officer von Nova, betonte, wie diese Zusammenarbeit die Fähigkeit von Nova demonstriert, innovative Technologien für die fortschrittliche Prozesskontrolle von Halbleitergeräten zu nutzen.
- Recognition of Nova's technological leadership through prestigious industry award
- Strategic collaboration with Samsung Electronics, a major industry player
- Successful development of innovative metrology solution for advanced semiconductor manufacturing
- None.
REHOVOT,
The award was granted to Nova and Samsung on the opening day of the 2025 conference. The paper is a result of continuous collaboration between the companies to explore innovative approaches to metrology in advanced chip manufacturing. The paper demonstrates the application of Nova's novel technologies in advanced process control by utilizing its unique and differentiated solutions.
The thickness of the chalcogenide Ovonic Threshold Switching (OTS) layer is one of the most critical parameters for the Selector-Only Memory (SOM) process control. In this work, we successfully demonstrated an alternative approach to enable precise monitoring and control of the chalcogenide layer using hybrid metrology consisting of Spectral Interferometry, Raman Spectroscopy and Machine Learning algorithms. The paper details how these advanced techniques were applied to achieve accurate thickness monitoring, ensuring optimal performance and reliability of SOM devices.
"We are honored to receive this prestigious award in collaboration with Samsung Electronics," said Dr. Shay Wolfling, Chief Technology Officer of Nova. "This collaboration showcases Nova's capability to leverage its unique innovative technologies, facilitating process control in the most advanced semiconductor devices. We continue to expand our solutions and enhance synergies within our portfolio, in collaboration with our leading customers, to address the growing challenges in advanced node manufacturing."
About Nova
Nova is a leading innovator and key provider of material, optical and chemical metrology solutions for advanced process control in semiconductor manufacturing. Nova delivers continuous innovation by providing state-of-the-art, high-performance metrology solutions for effective process control throughout the semiconductor fabrication lifecycle. Nova's product portfolio, which combines high-precision hardware and cutting-edge software, provides its customers with deep insight into developing and producing the most advanced semiconductor devices. Nova's unique capability to deliver innovative solutions enables its customers to improve performance, enhance product yields, and accelerate time to market. Nova acts as a partner to semiconductor manufacturers from its offices worldwide. Additional information may be found on Nova's website link - https://www.novami.com/.
Nova is traded on the Nasdaq and TASE, Nasdaq ticker symbol NVMI.
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