Magnachip Unveils Its First 8th-Generation MXT LV MOSFET Designed with Super-Short Channel FET II
Magnachip Semiconductor (NYSE: MX) has unveiled its first 8th-generation MXT LV MOSFET designed with Super-Short Channel FET II technology for smartphone battery protection circuits. The new 12V Dual N-channel MOSFET (MDWC12D024PERH) features a 22% reduction in RSS(on) compared to the previous generation, leading to decreased power loss, faster charging times, and a 12% lower internal temperature in fast charging mode.
This high-efficiency MOSFET is optimized for premium smartphones, particularly those with on-device AI capabilities. Market research firm Omdia projects on-device AI smartphone shipments to grow at a 50% annual rate from 2024 to 2028, reaching 606 million units in 2028. Magnachip plans to continue developing innovative high-density cell trench technology and launch advanced power solutions for smartphones, smartwatches, and earphones in the second half of 2024.
Magnachip Semiconductor (NYSE: MX) ha presentato il suo primo MOSFET MXT LV di ottava generazione progettato con la tecnologia Super-Short Channel FET II per circuiti di protezione della batteria degli smartphone. Il nuovo MOSFET Dual N-channel da 12V (MDWC12D024PERH) offre una riduzione del 22% in RSS(on) rispetto alla generazione precedente, portando a una riduzione delle perdite di potenza, tempi di ricarica più rapidi e una temperatura interna inferiore del 12% in modalità di ricarica rapida.
Questo MOSFET ad alta efficienza è ottimizzato per smartphone premium, in particolare per quelli con capacità AI on-device. La società di ricerche di mercato Omdia prevede che le spedizioni di smartphone con AI on-device cresceranno a un tasso annuo del 50% dal 2024 al 2028, raggiungendo 606 milioni di unità nel 2028. Magnachip prevede di continuare a sviluppare tecnologie innovative per celle ad alta densità e lanciare soluzioni di potenza avanzate per smartphone, smartwatch e auricolari nella seconda metà del 2024.
Magnachip Semiconductor (NYSE: MX) ha revelado su primer MOSFET MXT LV de octava generación diseñado con la tecnología Super-Short Channel FET II para circuitos de protección de baterías de smartphones. El nuevo MOSFET Dual N-channel de 12V (MDWC12D024PERH) presenta una reducción del 22% en RSS(on) en comparación con la generación anterior, lo que deriva en una disminución de la pérdida de energía, tiempos de carga más rápidos y una temperatura interna un 12% más baja en modo de carga rápida.
Este MOSFET de alta eficiencia está optimizado para smartphones premium, especialmente aquellos con capacidades de IA en el dispositivo. La firma de investigación de mercado Omdia proyecta que los envíos de smartphones con IA en el dispositivo crecerán a un rate anual del 50% de 2024 a 2028, alcanzando 606 millones de unidades en 2028. Magnachip planea continuar desarrollando tecnologías innovadoras de celdas de trinchera de alta densidad y lanzar soluciones de energía avanzadas para smartphones, smartwatches y auriculares en la segunda mitad de 2024.
Magnachip 반도체(NYSE: MX)가 스마트폰 배터리 보호 회로를 위해 Super-Short Channel FET II 기술로 설계된 최초의 8세대 MXT LV MOSFET을 공개했습니다. 새로운 12V 듀얼 N채널 MOSFET(MDWC12D024PERH)은 이전 세대에 비해 RSS(on)의 22% 감소를 특징으로 하여 전력 손실 감소, 더 빠른 충전 시간, 빠른 충전 모드에서 12% 낮은 내부 온도를 실현했습니다.
이 고효율 MOSFET은 특히 장치 내 AI 기능을 갖춘 프리미엄 스마트폰에 최적화되어 있습니다. 시장 조사 회사 Omdia는 장치 내 AI 스마트폰 출하량이 2024년부터 2028년까지 연간 50%의 성장률을 기록하며 2028년에는 6억 6천 만 대에 이를 것으로 예상하고 있습니다. Magnachip은 2024년 하반기에 스마트폰, 스마트워치 및 이어폰을 위한 고급 전력 솔루션을 출시하고 고밀도 셀 트렌치 기술을 지속적으로 개발할 계획입니다.
Magnachip Semiconductor (NYSE : MX) a dévoilé son premier MOSFET MXT LV de huitième génération conçu avec la technologie Super-Short Channel FET II pour les circuits de protection des batteries de smartphone. Le nouveau MOSFET double N-channel de 12V (MDWC12D024PERH) présente une réduction de 22 % en RSS(on) par rapport à la génération précédente, entraînant une réduction des pertes de puissance, des temps de charge plus rapides et une température interne inférieure de 12 % en mode de charge rapide.
Ce MOSFET haute efficacité est optimisé pour les smartphones haut de gamme, en particulier ceux dotés de fonctionnalités IA sur l'appareil. La société de recherche de marché Omdia prévoit que les expéditions de smartphones dotés d'IA sur l'appareil vont croître à un taux annuel de 50 % entre 2024 et 2028, atteignant 606 millions d'unités en 2028. Magnachip prévoit de continuer à développer des technologies innovantes de tranchées de cellules haute densité et de lancer des solutions d'alimentation avancées pour smartphones, montres intelligentes et écouteurs dans la seconde moitié de 2024.
Magnachip Semiconductor (NYSE: MX) hat seinen ersten 8. Generation MXT LV MOSFET vorgestellt, der mit der Super-Short Channel FET II-Technologie für Battereschutzschaltungen von Smartphones entwickelt wurde. Der neue 12V Dual N-Channel MOSFET (MDWC12D024PERH) weist eine 22%ige Reduktion des RSS(on) im Vergleich zur vorherigen Generation auf, was zu geringeren Energieverlusten, schnelleren Ladezeiten und einer um 12% niedrigeren Temperatur im Schnellladebetrieb führt.
Dieser hocheffiziente MOSFET ist optimiert für Premium-Smartphones, insbesondere für solche mit integrierten KI-Funktionen. Das Marktforschungsunternehmen Omdia prognostiziert, dass die Auslieferungen von Smartphones mit KI-Funktionen von 2024 bis 2028 um 50% jährlich zunehmen werden, mit einem Anstieg auf 606 Millionen Einheiten im Jahr 2028. Magnachip plant, die Entwicklung innovativer Hochdichte-Zellen-Trench-Technologie fortzusetzen und im zweiten Halbjahr 2024 fortschrittliche Leistungslösungen für Smartphones, Smartwatches und Kopfhörer auf den Markt zu bringen.
- Introduction of proprietary Super-Short Channel FET II technology, reducing RSS(on) by 22%
- Decreased power loss and faster charging times for smartphones
- 12% lower internal temperature in fast charging mode
- Optimized for premium smartphones with on-device AI capabilities
- Planned launch of advanced power solutions for various devices in H2 2024
- None.
Magnachip's unveiling of its 8th-generation MXT LV MOSFET with Super-Short Channel FET II technology marks a significant advancement in power management for smartphones, particularly those with on-device AI capabilities. The 22% reduction in RSS(on) compared to the previous generation is a substantial improvement that addresses critical issues in modern smartphone design:
- Decreased power loss, potentially extending battery life
- Shorter charging times, a key selling point for consumers
- 12% lower internal temperature during fast charging, which could enhance device longevity and safety
The timing of this release aligns well with the projected growth in on-device AI smartphones, which Omdia forecasts to reach 606 million units by 2028, growing at a
However, investors should note that while this technological advancement is impressive, Magnachip faces stiff competition in the semiconductor space. The company's ability to secure design wins with major smartphone manufacturers will be important for translating this innovation into revenue growth. Additionally, the cyclical nature of the semiconductor industry and potential supply chain disruptions remain risk factors to consider.
The introduction of Magnachip's 8th-generation MXT LV MOSFET is a timely response to the evolving demands of smartphone technology, particularly in the realm of on-device AI. This advancement addresses several key challenges in mobile device design:
- Power Efficiency: The reduced RSS(on) translates to lower power consumption, which is important for AI-intensive applications that can quickly drain batteries.
- Thermal Management: The
12% reduction in internal temperature during fast charging is significant, as it could allow for more aggressive charging protocols without compromising device safety or longevity. - Device Performance: By enabling faster charging and cooler operation, this MOSFET could indirectly support longer periods of peak performance for AI tasks without thermal throttling.
The focus on battery protection circuits is particularly noteworthy as smartphones continue to push the boundaries of processing power and battery capacity. As on-device AI becomes more prevalent, managing power draw and heat dissipation will be critical differentiators for smartphone manufacturers.
However, it's important to recognize that while this component is crucial, it's just one piece of the complex ecosystem required for on-device AI. The success of Magnachip in this market will depend on how well their solution integrates with other cutting-edge components and AI architectures being developed by smartphone OEMs.
Magnachip's new 12V MXT LV MOSFET features high power efficiency and is optimized for a wide range of battery protection applications in premium smartphones, particularly on-device AI smartphones. (Graphic: Business Wire)
Magnachip has introduced its proprietary Super-Short Channel FET II (SSCFET® II) technology for the first time in the Company’s new 12V Dual N-channel MOSFET (MDWC12D024PERH). SSCFET® II is Magnachip's latest design technology that significantly reduces the channel length, thereby lowering the 2)RSS(on).
Compared to the previous generation product of the same size, the RSS(on) of this product is reduced by approximately
With global smartphone manufacturers enhancing AI capabilities in smartphones, the importance of MOSFET products is growing. Magnachip's new 12V MXT LV MOSFET features high power efficiency and is optimized for a wide range of battery protection applications in premium smartphones, particularly on-device AI smartphones.
According to market research firm Omdia, shipments of on-device AI smartphones are expected to grow at an average annual rate of
"Following the development of Super-Short Channel FET I technology and the successful product rollout early last year, Magnachip has now introduced an upgraded Super-Short Channel FET II technology,” said YJ Kim, CEO of Magnachip. “We plan to continue developing innovative high-density cell trench technology and launch advanced power solutions targeting smartphones, smartwatches and earphones throughout the second half of this year."
Magnachip’s New 8th-Generation MXT LV MOSFET |
||||
Product |
VSS [V] |
2)RSS(on) [mΩ] @VGS=3.8V |
Package |
|
Max. |
Typ. |
|||
MDWC12D024PERH |
12 |
2.4 |
1.95 |
WLCSP |
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1)MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs
2)RSS(on): On resistance, the resistance value between sources of two protected MOSFETs during operation (ON)
Related Links
Power Solutions > MXT MOSFETs > 12V
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Magnachip Expands Its 7th-Generation MXT LV MOSFET Line-Up for Battery Protection Circuits of Mobile Devices
About Magnachip Semiconductor
Magnachip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communication, Internet of Things (“IoT”), consumer, computing, industrial and automotive applications. The Company provides a broad range of standard products to customers worldwide. Magnachip, with more than 40 years of operating history, owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.
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Min A KIM
Senior manager of Public Relations
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mina3.kim@magnachip.com
Source: Magnachip Semiconductor Corporation
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