Mitsubishi Electric Develops 200Gbps (112Gbaud PAM4) EML Chip Supporting Four CWDM Signals

Rhea-AI Summary

Mitsubishi Electric Corporation has announced the development of a new 200Gbps electro-absorption modulator laser diode (EML) chip, which doubles the speed of its existing model. This advancement is driven by a proprietary hybrid waveguide structure. The chip supports coarse wavelength division multiplexing, allowing data centers to achieve 800Gbps with four chips or 1.6Tbps with eight chips. This performance enhancement aims to meet increasing data traffic demands from video distribution and cloud computing. The chip will be showcased at the Optical Fiber Communication Conference in San Diego from March 5-9.

Positive

• Development of a 200Gbps EML chip, doubling the previous model's speed.
• Enhanced transmission capacity of up to 1.6Tbps using multiple chips.
• Expected to address increasing data traffic from video and cloud services.

Negative

• None.

Will enable data centers to realize up to 800Gbps/1.6Tbps

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a 200Gbps (112Gbaud four-level pulse-amplitude modulation (PAM4)) electro-absorption modulator laser diode (EML) chip that doubles the speed of the company's existing 100Gbps EML chip thanks to a proprietary hybrid waveguide structure. Support for coarse wavelength division multiplexing (CWDM) of four wavelengths realizes 800Gbps transmission using four chips or 1.6Tbps using eight chips.
The greatly improved performance is expected to raise the transmission speed of optical transceivers used in data centers to respond to mushrooming data-traffic demand due to the rapid growth of video distribution services and cloud computing.
Mitsubishi Electric will present its new chip at the Optical Fiver Communication Conference and Exhibition (OFC) 2023 in San Diego, USA this March 5-9.

Product Features
1)	Improved operational speed, extinction ratio and optical output due to unique structure
	-	High-speed operation of up to 200Gbps, high extinction ratio and high output power are achieved with Mitsubishi Electric’s unique hybrid waveguide structure, which combines a buried heterostructure laser diode for high optical-output power and a high-mesa waveguide electro absorption modulator.

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Customer Inquiries

Semiconductor & Device Marketing Div.B

Mitsubishi Electric Corporation

www.MitsubishiElectric.com/semiconductors/

Media Inquiries

Takeyoshi Komatsu

Public Relations Division

Mitsubishi Electric Corporation

Tel: +81-3-3218-2346

prd.gnews@nk.MitsubishiElectric.co.jp

www.MitsubishiElectric.com/news/

Source: Mitsubishi Electric Corporation

FAQ

What is the significance of Mitsubishi Electric's new 200Gbps EML chip?

The new 200Gbps EML chip doubles the speed of existing models, significantly enhancing data transmission capabilities for data centers.

How much data can be transmitted using Mitsubishi Electric's new chip?

The chip can support up to 800Gbps with four chips or 1.6Tbps with eight chips.

When and where will Mitsubishi Electric showcase its new EML chip?

Mitsubishi Electric will present the new EML chip at the Optical Fiber Communication Conference in San Diego from March 5-9.

What technologies enable the higher speeds in Mitsubishi Electric's new chip?

The chip utilizes a proprietary hybrid waveguide structure to achieve improved operational speed and output.

What market demand is Mitsubishi Electric's new chip addressing?

The chip is designed to meet the increasing data traffic demands driven by the growth of video distribution services and cloud computing.