Navitas and BRUSA Announce Development Partnership to Accelerate EV Adoption
Navitas Semiconductor and BRUSA HyPower AG have announced a technology partnership aimed at accelerating electric vehicle (EV) adoption using Navitas' Gallium Nitride (GaN) power integrated circuits (ICs). This collaboration aims to reduce the size and weight of power electronics in EV charging, addressing key barriers to EV adoption such as range anxiety and long charging times. Navitas estimates that their GaN technology could lead to up to 70% energy savings, faster charging, and a potential $250 revenue per EV by 2026. Additionally, adoption of GaN could accelerate EV rollout by up to three years, significantly cutting road sector emissions by 2050.
- Partnership aims to accelerate EV adoption through advanced GaN power ICs.
- Navitas estimates up to 70% energy savings and 3x faster charging.
- Potential revenue generation of $250 per EV in 2026.
- GaN technology could enable EVs to hit the market 3 years earlier, reducing emissions.
- None.
DUBLIN, Sept. 23, 2021 /PRNewswire/ -- Navitas Semiconductor, the industry leader in GaN power integrated circuits ("ICs") and BRUSA HyPower AG (BRUSA), a global leading provider of smart power electronic components and systems for motive and stationary applications announced a technology development partnership to accelerate EV adoption of Navitas GaN power ICs to reduce the size and weight of power electronic components that are used for EV charging.
Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power or 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and GaN drive plus protection and control to deliver simple, small, fast and efficient performance. GaN power ICs dominate flagship mobile fast chargers and are progressing into higher-power markets.
Dr Bernhard Budaker, vice president at BRUSA, recently introduced the company's technology roadmap and how the company is planning to develop the next generation of on-board chargers and DC-DC converters adopting new generation of GaN power semiconductor technology.
"BRUSA HyPower is convinced that Gallium Nitride – or GaN - will enable us to further improve our products. The main advantages of Navitas GaN power ICs, are simplicity of driving high-speed switching performance, increased reliability and compact form factor," said Dr. Budaker. "The technological insights provided by Navitas enable us to conduct advanced engineering projects and to ensure that BRUSA HyPower stays ahead of the competition."
"BRUSA's leading-edge insight and comprehensive review of next-generation technologies highlights how GaN power ICs help to overcome three obstacles to EV adoption: range anxiety, long charging time and cost," said Gene Sheridan, Navitas' co-founder and CEO. "With up to
DNV – an independent, international environmental research company - estimated that the adoption of EVs worldwide could be accelerated up to 3-years earlier by adopting GaN, saving
About BRUSA HyPower
BRUSA HyPower is a carve out legal entity of BRUSA Elektronik AG, a company founded in 1985. The company has focused on developing highly efficient power electronics for electric mobility. Today it is an acclaimed market leader in its field.
Josef Brusa, President of the Board of Directors, is convinced: "The future of mobility is electric. We have been working towards this since BRUSA was founded and now the technology is about to make a decisive breakthrough."
Today, BRUSA develops and produces technologies and products, of which the company is convinced of their long-term benefits for the environment and society.
About Navitas
Navitas Semiconductor Limited is the industry leader in GaN power IC's, founded in 2014. Navitas has a strong and growing team of power semiconductor industry experts with a combined 300 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 130 Navitas patents are issued or pending, and over 25 million GaNFast power ICs have been shipped with zero reported GaN field failures. On May 7th, 2021, Navitas announced plans to "Go Public at an Enterprise Value of
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com
+1-978-289-2364
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SOURCE Navitas Semiconductor
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