Infineon pioneers world's first 300 mm power gallium nitride (GaN) technology - an industry game-changer
Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) has developed the world's first 300 mm power gallium nitride (GaN) wafer technology, a groundbreaking achievement in high-volume manufacturing. This innovation will significantly drive the GaN-based power semiconductor market, offering 2.3 times more chips per wafer compared to 200 mm wafers.
GaN semiconductors are rapidly adopted in various applications, including AI systems, solar inverters, and motor-control systems. The 300 mm manufacturing process ensures improved device performance, efficiency, and customer supply stability. Infineon's success leverages existing 300 mm silicon production competencies, allowing for accelerated implementation and efficient capital use.
This breakthrough positions Infineon to shape the growing GaN market, estimated to reach several billion US-Dollars by the end of the decade. The company aims to achieve cost parity between GaN and silicon products, supporting its mission of decarbonization and digitalization.
Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) ha sviluppato la prima tecnologia di wafer di potenza in nitruro di gallio (GaN) da 300 mm al mondo, un risultato innovativo nella produzione ad alto volume. Questa innovazione guiderà significativamente il mercato dei semiconduttori di potenza a base di GaN, offrendo 2,3 volte più chip per wafer rispetto ai wafer da 200 mm.
I semiconduttori GaN sono rapidamente adottati in varie applicazioni, tra cui sistemi AI, inverter solari e sistemi di controllo motore. Il processo di produzione da 300 mm garantisce prestazioni migliorate del dispositivo, efficienza e stabilità nella fornitura ai clienti. Il successo di Infineon sfrutta le competenze esistenti nella produzione di silicio da 300 mm, consentendo un'implementazione accelerata e un uso efficiente del capitale.
Questa innovazione posiziona Infineon per influenzare il crescente mercato del GaN, stimato raggiungere diversi miliardi di dollari USA entro la fine del decennio. L'azienda mira a raggiungere la parità di costo tra prodotti GaN e silicio, supportando la sua missione di decarbonizzazione e digitalizzazione.
Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) ha desarrollado la primera tecnología de obleas de potencia de nitruro de galio (GaN) de 300 mm en el mundo, un logro revolucionario en la fabricación a gran escala. Esta innovación impulsará significativamente el mercado de semiconductores de potencia basados en GaN, ofreciendo 2,3 veces más chips por oblea en comparación con las obleas de 200 mm.
Los semiconductores de GaN se están adoptando rápidamente en varias aplicaciones, incluyendo sistemas de IA, inversores solares y sistemas de control de motores. El proceso de fabricación de 300 mm asegura un mejor rendimiento de los dispositivos, eficiencia y estabilidad en el suministro a los clientes. El éxito de Infineon aprovecha las competencias existentes en producción de silicio de 300 mm, permitiendo una implementación acelerada y un uso eficiente del capital.
Este avance posiciona a Infineon para dar forma al creciente mercado de GaN, que se estima alcanzará varios miles de millones de dólares estadounidenses para finales de la década. La empresa tiene como objetivo lograr paridad de costos entre productos de GaN y silicio, apoyando su misión de descarbonización y digitalización.
인피니언 테크놀로지스 AG (FSE: IFX) (OTCQX: IFNNY)는 세계 최초의 300mm 전력 질화갈륨(GaN) 웨이퍼 기술을 개발했습니다. 이는 대량 생산에서 전환점을 나타내는 혁신적인 성과입니다. 이 혁신은 GaN 기반 전력 반도체 시장을 크게 촉진시키며, 200mm 웨이퍼에 비해 웨이퍼당 2.3배 더 많은 칩을 제공할 것입니다.
GaN 반도체는 AI 시스템, 태양광 인버터, 모터 제어 시스템 등 다양한 응용 분야에서 빠르게 채택되고 있습니다. 300mm 제조 공정은 장치 성능, 효율성 및 고객 공급 안정성을 개선해줍니다. 인피니언의 성공은 기존 300mm 실리콘 생산 역량을 활용하여 빠른 구현과 효율적인 자본 사용을 가능하게 합니다.
이 혁신은 인피니언이 10년 말까지 수십억 달러에 달할 것으로 예상되는 성장하는 GaN 시장을 형성하는 데 기여하도록 포지셔닝합니다. 회사는 GaN과 실리콘 제품 간의 비용 평준화를 달성하여 탈탄소화 및 디지털화라는 사명을 지원할 계획입니다.
Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) a développé la première technologie de wafer en nitrure de gallium (GaN) de 300 mm au monde, une réalisation révolutionnaire dans la fabrication à grande échelle. Cette innovation stimulera considérablement le marché des semi-conducteurs de puissance à base de GaN, offrant 2,3 fois plus de puces par wafer par rapport aux wafers de 200 mm.
Les semi-conducteurs GaN sont rapidement adoptés dans diverses applications, y compris les systèmes d'IA, les onduleurs solaires et les systèmes de contrôle de moteur. Le processus de fabrication de 300 mm garantit une amélioration des performances des dispositifs, de l'efficacité et de la stabilité de l'approvisionnement pour les clients. Le succès d'Infineon repose sur les compétences existantes en production de silicium de 300 mm, permettant une mise en œuvre accélérée et une utilisation efficace du capital.
Cette avancée positionne Infineon pour façonner le marché croissant du GaN, dont la valeur est estimée à plusieurs milliards de dollars américains d'ici la fin de la décennie. L'entreprise vise à atteindre la parité des coûts entre les produits GaN et silicium, soutenant ainsi sa mission de décarbonisation et de numérisation.
Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) hat die weltweit erste 300-mm-Leistungs-Galliumnitrid (GaN)-Wafer-Technologie entwickelt, eine bahnbrechende Errungenschaft in der hochvolumigen Produktion. Diese Innovation wird den Markt für GaN-basierte Leistungshalbleiter erheblich vorantreiben und 2,3-mal mehr Chips pro Wafer im Vergleich zu 200-mm-Wafern bieten.
GaN-Halbleiter finden schnell Anwendung in verschiedenen Bereichen, darunter KI-Systeme, Solarwechselrichter und Motorsteuerungssysteme. Der 300-mm-Herstellungsprozess gewährleistet eine verbesserte Geräteleistung, Effizienz und Stabilität der Kundenzufuhr. Der Erfolg von Infineon nutzt die bestehenden Kompetenzen in der 300-mm-Siliziumproduktion und ermöglicht eine beschleunigte Implementierung sowie eine effiziente Kapitalnutzung.
Dieser Durchbruch positioniert Infineon, um den wachsenden GaN-Markt zu gestalten, dessen Wert bis Ende des Jahrzehnts auf mehrere Milliarden US-Dollar geschätzt wird. Das Unternehmen zielt darauf ab, Kostenparität zwischen GaN- und Siliziumprodukten zu erreichen und unterstützt somit seine Mission der Dekarbonisierung und Digitalisierung.
- Developed world's first 300 mm power GaN wafer technology
- 2.3 times more chips per wafer compared to 200 mm wafers
- Leverages existing 300 mm silicon manufacturing for capital efficiency
- Positions Infineon as a leader in the fast-growing GaN market
- Aims to achieve cost parity between GaN and silicon products
- None.
- Infineon will shape the rapidly growing GaN market with this groundbreaking GaN 300 mm technology
- Infineon leverages existing large scale 300 mm silicon manufacturing to maximize capital efficiency in GaN production
- 300 mm GaN will help achieve cost parity with silicon over time
- Picture is available at AP -
Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter offers 2.3 times more chips per wafer.
GaN-based power semiconductors find fast adoption in industrial, automotive, and consumer, computing & communication applications, including power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems. State-of-the art GaN manufacturing processes lead to improved device performance resulting in benefits in end customers' applications as it enables efficiency performance, smaller size, lighter weight, and lower overall cost. Furthermore, 300 mm manufacturing ensures superior customer supply stability through scalability.
"This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems," said Jochen Hanebeck, CEO of Infineon Technologies AG. "The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride."
Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach (
This pioneering technological success underlines Infineon's position as a global semiconductor leader in power systems and IoT. Infineon is implementing 300 mm GaN to strengthen existing and enabling new solutions and application fields with an increasingly cost-effective value proposition and the ability to address the full range of customer systems. Infineon will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in
A significant advantage of 300 mm GaN technology is that it can utilize existing 300 mm silicon manufacturing equipment, since gallium nitride and silicon are very similar in manufacturing processes. Infineon's existing high-volume silicon 300 mm production lines are ideal to pilot reliable GaN technology, allowing accelerated implementation and efficient use of capital. Fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on RDS(on) level, which means cost parity for comparable Si and GaN products.
300 mm GaN is another milestone in Infineon's strategic innovation leadership and supports Infineon's mission of decarbonization and digitalization.
About Infineon
Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,600 employees worldwide and generated revenue of about
Further information is available at www.infineon.com
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SOURCE Infineon Technologies AG
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