GlobalFoundries GaN Chip Manufacturing Advances with $9.5 Million U.S. Federal Funding
GlobalFoundries (GFS) has secured an additional $9.5 million in federal funding from the U.S. government to advance its gallium nitride (GaN) semiconductor manufacturing in Essex Junction, Vermont. This funding supports GF's progress toward large-scale production of GaN chips, which are important for high-performance and energy-efficient RF and high-power control applications in automobiles, datacenters, IoT, aerospace, and defense sectors.
The funding, awarded by the U.S. Department of Defense's Trusted Access Program Office (TAPO), will be used for new tools, equipment, and prototyping capabilities. Since 2020, GF has received over $80 million in total U.S. government funding for GaN development. The company recently expanded its GaN capabilities by acquiring Tagore Technology's GaN Power portfolio and establishing the GF Kolkata Power Center in India.
GlobalFoundries (GFS) ha ottenuto un ulteriore 9,5 milioni di dollari in finanziamenti federali dal governo degli Stati Uniti per promuovere la produzione di semiconduttori in nitruro di gallio (GaN) a Essex Junction, Vermont. Questo finanziamento sostiene i progressi di GF verso la produzione su larga scala di chip GaN, che sono fondamentali per applicazioni RF e di controllo ad alta potenza, ad alte prestazioni e ad alta efficienza energetica nei settori automobilistico, dei datacenter, IoT, aerospaziale e della difesa.
Il finanziamento, assegnato dall'Ufficio del Programma di Accesso Fidato (TAPO) del Dipartimento della Difesa degli Stati Uniti, verrà utilizzato per nuovi strumenti, attrezzature e capacità di prototipazione. Dal 2020, GF ha ricevuto oltre 80 milioni di dollari in finanziamenti totali dal governo degli Stati Uniti per lo sviluppo del GaN. Recentemente, l'azienda ha ampliato le sue capacità nel GaN acquisendo il portafoglio di potenza GaN di Tagore Technology e stabilendo il GF Kolkata Power Center in India.
GlobalFoundries (GFS) ha asegurado 9,5 millones de dólares adicionales en financiación federal del gobierno de EE.UU. para avanzar en la fabricación de semiconductores de nitruro de galio (GaN) en Essex Junction, Vermont. Este financiamiento apoya el progreso de GF hacia la producción a gran escala de chips GaN, que son importantes para aplicaciones de control de RF y de alta potencia de alto rendimiento y eficiencia energética en los sectores automotriz, centros de datos, IoT, aeroespacial y defensa.
La financiación, otorgada por la Oficina del Programa de Acceso Confiable (TAPO) del Departamento de Defensa de EE.UU., se utilizará para nuevas herramientas, equipos y capacidades de prototipado. Desde 2020, GF ha recibido más de 80 millones de dólares en financiamiento total del gobierno de EE.UU. para el desarrollo de GaN. Recientemente, la empresa amplió sus capacidades de GaN al adquirir el portafolio de potencia GaN de Tagore Technology y establecer el GF Kolkata Power Center en India.
GlobalFoundries (GFS)는 미국 정부로부터 950만 달러의 추가 연방 자금을 확보하여 버몬트주 에섹스 정션에서 질화갈륨(GaN) 반도체 제조를 발전시키고 있습니다. 이 자금은 GF가 자동차, 데이터 센터, IoT, 항공 우주, 방위 분야에서 고성능 및 에너지 효율이 높은 RF 및 고전력 제어 애플리케이션을 위한 GaN 칩의 대규모 생산을 향한 진전을 지원합니다.
이 자금은 미국 국방부의 신뢰할 수 있는 접근 프로그램 사무소(TAPO)에서 수여되었으며, 새로운 도구, 장비 및 프로토타이핑 능력을 위해 사용될 것입니다. 2020년 이후, GF는 GaN 개발을 위한 총 미국 정부 자금으로 8000만 달러 이상을 받았습니다. 최근 회사는 타고르 테크놀로지의 GaN 전력 포트폴리오를 인수하고 인도에 GF 콜카타 전력 센터를 설립하여 GaN 능력을 확장했습니다.
GlobalFoundries (GFS) a obtenu 9,5 millions de dollars de financement fédéral supplémentaire du gouvernement américain pour faire avancer sa fabrication de semi-conducteurs en nitrure de gallium (GaN) à Essex Junction, Vermont. Ce financement soutient les progrès de GF vers une production à grande échelle de puces GaN, importantes pour des applications de contrôle RF et haute puissance à haute performance et écoénergétiques dans les secteurs automobile, des centres de données, IoT, aérospatial et de la défense.
Le financement, accordé par le Bureau du Programme d'Accès Fiable (TAPO) du Département de la Défense des États-Unis, sera utilisé pour de nouveaux outils, équipements et capacités de prototypage. Depuis 2020, GF a reçu plus de 80 millions de dollars en financement total du gouvernement américain pour le développement du GaN. Récemment, l'entreprise a élargi ses capacités en GaN en acquérant le portefeuille de puissance GaN de Tagore Technology et en établissant le GF Kolkata Power Center en Inde.
GlobalFoundries (GFS) hat zusätzliche 9,5 Millionen Dollar an Bundesmitteln von der US-Regierung gesichert, um die Herstellung von Halbleitern auf Galliumnitrid (GaN) in Essex Junction, Vermont, voranzutreiben. Diese Finanzierung unterstützt den Fortschritt von GF in Richtung einer großflächigen Produktion von GaN-Chips, die für hochleistungsfähige und energieeffiziente RF- und Hochleistungssteuerungsanwendungen in den Bereichen Automobilindustrie, Rechenzentren, IoT, Luft- und Raumfahrt sowie Verteidigung wichtig sind.
Die Finanzierung, die vom Trusted Access Program Office (TAPO) des US-Verteidigungsministeriums bereitgestellt wurde, wird für neue Werkzeuge, Ausrüstungen und Prototyping-Fähigkeiten verwendet. Seit 2020 hat GF über 80 Millionen Dollar an Gesamtkosten für die GaN-Entwicklung von der US-Regierung erhalten. Das Unternehmen hat kürzlich seine GaN-Fähigkeiten durch den Erwerb des GaN-Power-Portfolios von Tagore Technology und die Gründung des GF Kolkata Power Centers in Indien erweitert.
- Secured $9.5 million in federal funding for GaN chip development
- Total government funding exceeds $80 million since 2020
- Strategic acquisition of Tagore Technology's GaN Power portfolio
- Expansion of capabilities with new Kolkata Power Center
- None.
Insights
The
The total government funding of over
This development is particularly important given the growing demand for high-performance, energy-efficient semiconductors and the strategic importance of securing domestic semiconductor supply chains.
The DoD's investment through TAPO underscores the critical nature of GaN semiconductor technology for national security applications. GF's Vermont facility's status as a U.S.-accredited Trusted Foundry is particularly significant, as it enables the manufacture of sensitive components for defense systems under secure conditions.
The development of domestic GaN manufacturing capability addresses key supply chain vulnerabilities and reduces dependence on foreign semiconductor sources. This aligns with broader national security objectives to strengthen domestic semiconductor production, especially for defense-critical applications where GaN's superior performance characteristics in RF and high-power applications are essential.
Funding moves GF closer to large-scale production of next-generation gallium nitride chips for a range of RF and high-power applications
ESSEX JUNCTION, Vt., Dec. 04, 2024 (GLOBE NEWSWIRE) -- GlobalFoundries (Nasdaq: GFS) (GF) has received an additional
With the award, GF will continue to add new tools, equipment and prototyping capabilities to its market-leading GaN IP portfolio and reliability testing as the company moves closer to full-scale manufacturing of its 200mm GaN chips in Vermont. GF is committed to creating a fast and efficient path for customers to realize new innovative designs and products that leverage the unique efficiency and power management benefits of GaN chip technology.
“GF is proud of its leadership in GaN chip technology, which is positioned to make game-changing advances across multiple end-markets and enable new generations of devices with more energy-efficient RF performance and faster-charging, longer-lasting batteries,” said Nicholas Sergeant, vice president of IoT and aerospace and defense at GF. “We appreciate the U.S. government’s partnership and ongoing support of our GaN program. Realizing full-scale GaN chip manufacturing will be a catalyst for innovation, for both our commercial and government partners, and will add resilience and strengthen the semiconductor supply chain.”
The new funding, awarded by the U.S. Department of Defense’s Trusted Access Program Office (TAPO), represents the latest federal investment to support GF’s GaN program in Vermont.
“This strategic investment in critical technologies strengthens our domestic ecosystem and national security, and ensures these assets are readily available and secure for DoD utilization. In concert with key partners, this approach fortifies defense systems, empowering resilience and responsiveness,” said Dr. Nicholas Martin, Director at Defense Microelectronics Activity.
In total, including the new award, GF has received more than
Vermont is a U.S.-accredited Trusted Foundry and the global hub of GF’s GaN program, with longstanding leadership in 200mm semiconductor manufacturing. In July 2024, GF acquired Tagore Technology’s Gallium Nitride Power portfolio and created the GF Kolkata Power Center in Kolkata, India. The center is closely aligned with and supports GF’s facility in Vermont, and is helping advance GF’s research, development and leadership in GaN chip manufacturing.
About GF
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors the world relies on to live, work and connect. We innovate and partner with customers to deliver more power-efficient, high-performance products for the automotive, smart mobile devices, internet of things, communications infrastructure and other high-growth markets. With our global manufacturing footprint spanning the U.S., Europe, and Asia, GF is a trusted and reliable source for customers around the world. Every day, our talented and diverse team delivers results with an unyielding focus on security, longevity, and sustainability. For more information, visit www.gf.com.
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Forward-looking Information
This news release may contain forward-looking statements, which involve risks and uncertainties. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. GF undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law.
Media Contact:
Michael Mullaney
michael.mullaney@gf.com
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