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Coherent Expands Silicon Carbide 200 mm n-Type Epitaxial Wafer Production

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Coherent Corp. (NYSE: COHR) has launched its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers), with shipments of 350 micron and 500 micron thickness substrates and epi-wafers already underway. As a manufacturer of both SiC substrates and epitaxial wafers, Coherent aims to deliver exceptional quality, performance, and reliability.

The new 200 mm SiC epi-wafers feature advanced thickness and doping uniformity, supporting the production of superior SiC power semiconductors. This transition from 150 mm to 200 mm diameter wafers addresses the growing demand for SiC semiconductors in electric and hybrid vehicles, energy infrastructure, and high-power EV chargers.

The larger wafers offer a 1.8x increase in usable area, potentially enhancing productivity and reducing costs for SiC device manufacturers. The implementation of 200 mm tooling aligns with the industry's drive for greater performance and reduced operational costs.

Coherent Corp. (NYSE: COHR) ha lanciato i suoi wafer epitassiali in carburo di silicio da 200 mm (wafer SiC epi), con spedizioni di substrati e wafer epi di spessore di 350 micron e 500 micron già in corso. Come produttore sia di substrati SiC che di wafer epitassiali, Coherent punta a garantire qualità, prestazioni e affidabilità eccezionali.

I nuovi wafer SiC epi da 200 mm presentano una avanzata uniformità di spessore e drogaggio, supportando la produzione di superiori semiconduttori di potenza in SiC. Questa transizione da wafer di diametro 150 mm a 200 mm risponde alla crescente domanda di semiconduttori in SiC per veicoli elettrici e ibridi, infrastrutture energetiche e caricatori EV ad alta potenza.

I wafer più grandi offrono un aumento dell'1,8x nell'area utilizzabile, con il potenziale di migliorare la produttività e ridurre i costi per i produttori di dispositivi SiC. L'implementazione di strumenti da 200 mm si allinea alla spinta dell'industria verso prestazioni superiori e costi operativi ridotti.

Coherent Corp. (NYSE: COHR) ha lanzado sus obleas epitaxiales de carburo de silicio de 200 mm (oblea SiC epi), con envíos de sustratos y obleas epi de 350 micrones y 500 micrones de grosor ya en marcha. Como fabricante tanto de sustratos SiC como de obleas epitaxiales, Coherent tiene como objetivo ofrecer una calidad, rendimiento y fiabilidad excepcionales.

Las nuevas obleas SiC epi de 200 mm presentan una avanzada uniformidad de grosor y dopaje, lo que apoya la producción de semiconductores de potencia en SiC de primera calidad. Esta transición de obleas de 150 mm a 200 mm de diámetro responde a la creciente demanda de semiconductores en SiC para vehículos eléctricos e híbridos, infraestructura energética y cargadores de EV de alta potencia.

Las obleas más grandes ofrecen un aumento de 1.8x en el área utilizable, lo que potencialmente mejora la productividad y reduce los costos para los fabricantes de dispositivos SiC. La implementación de herramientas de 200 mm se alinea con el esfuerzo de la industria para un mayor rendimiento y costos operativos reducidos.

Coherent Corp. (NYSE: COHR)는 200mm 실리콘 카바이드 에피웨이퍼 (SiC 에피웨이퍼)를 출시했으며, 350마이크론 및 500마이크론 두께의 기판과 에피웨이퍼의 배송이 이미 시작되었습니다. SiC 기판과 에피웨이퍼 모두를 제조하는 Coherent는 탁월한 품질, 성능 및 신뢰성을 제공하는 것을 목표로 하고 있습니다.

새로운 200mm SiC 에피웨이퍼는 부피와 도핑의 균일성이 개선되어 있으며, 고성능 SiC 전력 반도체의 생산을 지원합니다. 이는 150mm에서 200mm 직경의 웨이퍼로의 전환으로, 전기 및 하이브리드 차량, 에너지 인프라 및 고전력 EV 충전기에 대한 SiC 반도체 수요가 증가하는 것을 반영합니다.

더 큰 웨이퍼는 사용 가능한 면적을 1.8배 증가시킵니다, 이는 SiC 장치 제조업체들의 생산성 향상과 비용 절감 가능성을 높입니다. 200mm 도구의 도입은 업계의 더 높은 성능 및 운영 비용 절감 목표와 일치합니다.

Coherent Corp. (NYSE: COHR) a lancé ses wafers épitaxiaux en carbure de silicium de 200 mm (wafers SiC epi), avec des expéditions de substrats et de wafers epi de 350 microns et 500 microns d'épaisseur déjà en cours. En tant que fabricant à la fois de substrats SiC et de wafers épitaxiaux, Coherent vise à fournir une qualité, des performances et une fiabilité exceptionnelles.

Les nouveaux wafers SiC epi de 200 mm présentent une uniformité avancée de l’épaisseur et du dopage, soutenant la production de semi-conducteurs de puissance SiC de haute qualité. Cette transition des wafers de 150 mm à 200 mm de diamètre répond à la demande croissante de semi-conducteurs SiC dans les véhicules électriques et hybrides, les infrastructures énergétiques et les chargeurs EV haute puissance.

Les wafers plus grands offrent une augmentation de 1,8 fois de la surface utilisable, ce qui pourrait améliorer la productivité et réduire les coûts pour les fabricants de dispositifs SiC. La mise en œuvre d'outils de 200 mm est en ligne avec l'aspiration de l'industrie à des performances supérieures et à une réduction des coûts opérationnels.

Coherent Corp. (NYSE: COHR) hat seine 200 mm Siliziumcarbid-Epitaxie-Wafer (SiC Epi-Wafer) auf den Markt gebracht, wobei bereits Lieferungen von Substraten und Epi-Wafern mit einer Dicke von 350 Mikrometer und 500 Mikrometer stattfinden. Als Hersteller sowohl von SiC-Substraten als auch von epitaxialen Wafern hat Coherent das Ziel, außergewöhnliche Qualität, Leistung und Zuverlässigkeit zu gewährleisten.

Die neuen 200 mm SiC Epi-Wafer bieten eine verbesserte Gleichmäßigkeit der Dicke und Doping, die die Produktion von hochwertigen SiC-Leistungs-Halbleitern unterstützt. Dieser Übergang von 150 mm auf 200 mm Durchmesserwafer reagiert auf die steigende Nachfrage nach SiC-Halbleitern in Elektro- und Hybridfahrzeugen, Energieinfrastrukturen und Hochleistungs-EV-Ladegeräten.

Die größeren Wafer bieten eine 1,8-fache Vergrößerung der nutzbaren Fläche, was potenziell die Produktivität steigern und die Kosten für SiC-Gerätehersteller senken kann. Die Implementierung von 200 mm Werkzeugen steht im Einklang mit dem Bestreben der Branche nach höherer Leistung und reduzierten Betriebskosten.

Positive
  • Launch of 200 mm silicon carbide epitaxial wafers
  • 1.8x increase in usable area per wafer compared to 150 mm
  • Potential for enhanced productivity and reduced costs for SiC device manufacturers
  • Addresses growing demand in electric vehicles and energy infrastructure sectors
Negative
  • None.

Insights

Coherent's expansion into 200 mm SiC epi-wafer production marks a significant technological advancement in the semiconductor industry. The transition from 150 mm to 200 mm wafers offers a 1.8x increase in usable area, which translates to higher yields and improved cost efficiency for device manufacturers. This move aligns with the growing demand for SiC semiconductors in critical sectors like electric vehicles, energy infrastructure and high-power EV chargers.

The company's ability to manufacture both SiC substrates and epitaxial wafers in-house gives them a competitive edge in quality control and integration. The focus on advanced thickness and doping uniformity suggests potential improvements in device performance and reliability. This development could accelerate the adoption of SiC devices in power electronics applications, potentially disrupting traditional silicon-based solutions.

For investors, this positions Coherent as a key player in the rapidly growing SiC market, which is important for next-generation power electronics. The expansion could lead to increased market share and revenue growth, especially as the automotive and renewable energy sectors continue to expand their use of SiC technology.

Coherent's strategic move into 200 mm SiC epi-wafer production is well-timed with market trends. The global SiC market is projected to grow at a CAGR of over 30% in the coming years, driven by demand in electric vehicles and renewable energy sectors. By offering larger wafers, Coherent is addressing a critical industry need for cost reduction and increased production capacity.

This expansion could significantly impact Coherent's market position. As one of the few companies capable of producing both SiC substrates and epi-wafers at 200 mm, they're well-positioned to capture a larger market share. The move also aligns with the industry's push towards larger wafer sizes, which could become a standard in the near future.

Investors should note that while this development is promising, the SiC market is highly competitive with players like Wolfspeed and STMicroelectronics also investing heavily in capacity expansion. Coherent's success will depend on their ability to scale production efficiently and maintain quality standards. The potential for increased revenue and market share makes this a positive development for the company's long-term growth prospects.

PITTSBURGH, Sept. 26, 2024 (GLOBE NEWSWIRE) -- Coherent Corp. (NYSE: COHR), a global leader in materials, networking, and laser technologies, announced today the launch of its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers). Substrate and epi-wafer shipments from the company at 350 micron and 500 micron thickness are now underway.

As a dedicated manufacturer of both SiC substrates and epitaxial wafers, Coherent combines these elements to deliver exceptional quality, performance, and reliability. The new 200 mm SiC epi-wafers are engineered with cutting-edge thickness and doping uniformity, setting new industry standards and supporting the production of superior SiC power semiconductors.

“With our advanced technology, we are not only enhancing the quality of SiC devices but also addressing the growing demand for 200 mm for efficient power-conversion components in critical sectors,” said Gary Ruland, Vice President and General Manager of the SiC Materials Business Unit.

SiC devices are integral to power conversion in electric and hybrid vehicles, energy infrastructure, and high-power EV chargers. The transition from 150 mm to 200 mm diameter wafers responds to the increasing demand for SiC semiconductors, allowing manufacturers to produce more devices per wafer. This shift is expected to enhance productivity and reduce the cost of SiC devices, benefiting a wide range of applications.

By adopting larger wafers, SiC device manufacturers can achieve higher yields and improved cost efficiency because of a 1.8x increase in usable area per wafer. The implementation of state-of-the-art 200 mm tooling brings additional advantages while aligning with the industry’s drive for greater performance and reduced operational costs.

For additional information about Coherent silicon carbide epitaxial wafers or other innovative products, please visit coherent.com.

About Coherent
Coherent empowers market innovators to define the future through breakthrough technologies, from materials to systems. We deliver innovations that resonate with our customers in diversified applications for the industrial, communications, electronics, and instrumentation markets. Coherent has research and development, manufacturing, sales, service, and distribution facilities worldwide. For more information, please visit us at coherent.com.

Media Contact:

Amy Wilson
Corporate Communications & Investor Relations
corporate.communications@coherent.com


FAQ

What new product has Coherent Corp (COHR) launched in September 2024?

Coherent Corp (COHR) has launched 200 mm silicon carbide epitaxial wafers (SiC epi-wafers) in September 2024.

What are the thickness options available for Coherent's new 200 mm SiC epi-wafers?

Coherent's new 200 mm SiC epi-wafers are available in 350 micron and 500 micron thickness options.

How does the 200 mm wafer compare to the previous 150 mm wafer in terms of usable area?

The 200 mm wafer offers a 1.8x increase in usable area compared to the previous 150 mm wafer.

What industries are expected to benefit from Coherent's new 200 mm SiC epi-wafers?

Industries expected to benefit include electric and hybrid vehicles, energy infrastructure, and high-power EV chargers.

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