Media Alert: Atomera to Deliver Presentation on Applications of Oxygen Inserted Epitaxy at PRiME 2024
Atomera Incorporated (Nasdaq: ATOM), a semiconductor materials and technology licensing company, announces that its Chief Technology Officer and Founder, Robert J. Mears, will deliver a presentation titled 'Applications of Oxygen Inserted Epitaxy' at PRiME 2024. The event is scheduled for October 11, 2024, from 10:40 a.m. to 11:10 a.m. (HST) in Room 320 of the Hawaii Convention Center, Honolulu.
The presentation will focus on Oxygen Inserted (OI) Epitaxy, a class of Atomera's MST® film, and its advanced applications in the semiconductor industry. Mears will discuss how OI silicon epitaxy supports cutting-edge nanosheet and power devices, enabling interface engineering for increased mobility in Gate All Around transistors and dopant profile engineering for various semiconductor applications.
Atomera Incorporated (Nasdaq: ATOM), un'azienda di materiali semiconduttori e licenze tecnologiche, annuncia che il suo Chief Technology Officer e Fondatore, Robert J. Mears, terrà una presentazione intitolata 'Applicazioni dell'Epitassia con Ossigeno Inserito' al PRiME 2024. L'evento è programmato per 11 Ottobre 2024, dalle 10:40 alle 11:10 (HST) nella Sala 320 del Hawaii Convention Center, Honolulu.
La presentazione si concentrerà sull'Epitassia con Ossigeno Inserito (OI), una classe di film MST® di Atomera, e le sue applicazioni avanzate nell'industria dei semiconduttori. Mears discuterà di come l'epitassia di silicio OI supporti dispositivi all'avanguardia come i nanosheet e i dispositivi di potenza, abilitando l'ingegneria dell'interfaccia per una maggiore mobilità nei transistor Gate All Around e l'ingegneria del profilo dei dopanti per varie applicazioni semiconduttori.
Atomera Incorporated (Nasdaq: ATOM), una empresa de materiales semiconductores y licencias tecnológicas, anuncia que su Director de Tecnología y Fundador, Robert J. Mears, presentará una charla titulada 'Aplicaciones de la Epitaxia con Oxígeno Insertado' en PRiME 2024. El evento está programado para 11 de octubre de 2024, de 10:40 a.m. a 11:10 a.m. (HST) en la Sala 320 del Centro de Convenciones de Hawái, Honolulu.
La presentación se centrará en la Epitaxia con Oxígeno Insertado (OI), una clase de película MST® de Atomera, y sus aplicaciones avanzadas en la industria de semiconductores. Mears discutirá cómo la epitaxia de silicio OI apoya dispositivos de vanguardia como nanosheet y dispositivos de potencia, permitiendo la ingeniería de interfaces para aumentar la movilidad en los transistores Gate All Around y la ingeniería del perfil de dopantes para diversas aplicaciones de semiconductores.
Atomera Incorporated (Nasdaq: ATOM), 반도체 재료 및 기술 라이센스 회사는, 최고 기술 책임자이자 창립자인 Robert J. Mears가 PRiME 2024에서 '산소 주입 에피택시의 응용'이라는 제목으로 발표할 것이라고 발표했습니다. 이 행사는 2024년 10월 11일, 오전 10:40부터 11:10까지 (HST) 하와이 컨벤션 센터 320호에서 진행됩니다.
이 발표는 Atomera의 MST® 필름 중 하나인 산소 주입 (OI) 에피택시에 중점을 두고 있으며, 반도체 산업에서의 고급 응용 프로그램에 대해 논의할 것입니다. Mears는 OI 실리콘 에피택시가 최첨단 나노시트 및 전력 장치를 어떻게 지원하며, Gate All Around 트랜지스터에서 이동성을 증가시키기 위한 인터페이스 엔지니어링과 다양한 반도체 응용을 위한 도펀트 프로필 엔지니어링을 가능하게 하는지에 대해 설명할 것입니다.
Atomera Incorporated (Nasdaq: ATOM), une entreprise de matériaux semi-conducteurs et de licences technologiques, annonce que son Directeur Technique et Fondateur, Robert J. Mears, présentera une conférence intitulée 'Applications de l'Épitaxie avec Oxygène Injecté' lors de PRiME 2024. L'événement est prévu pour le 11 octobre 2024, de 10h40 à 11h10 (HST) dans la Salle 320 du Centre des Congrès d'Hawaï, Honolulu.
La présentation se concentrera sur l', une classe de films MST® d'Atomera, et ses applications avancées dans l'industrie des semi-conducteurs. Mears discutera de la manière dont l'épitaxie de silicium OI soutient des dispositifs innovants tels que les nanosheets et les dispositifs de puissance, permettant l'ingénierie des interfaces pour une mobilité accrue dans les transistors Gate All Around et l'ingénierie des profils de dopants pour diverses applications en semi-conducteurs.
Atomera Incorporated (Nasdaq: ATOM), ein Unternehmen für Halbleitermaterialien und Technologielizenzen, gibt bekannt, dass der Chief Technology Officer und Gründer, Robert J. Mears, eine Präsentation mit dem Titel 'Anwendungen der mit Sauerstoff eingesetzten Epitaxie' auf der PRiME 2024 halten wird. Die Veranstaltung findet am 11. Oktober 2024, von 10:40 bis 11:10 Uhr (HST) im Raum 320 des Hawaii Convention Centers in Honolulu statt.
Die Präsentation wird sich auf die mit Sauerstoff eingesetzte (OI) Epitaxie, eine Klasse von Atomeras MST®-Filmen, und ihre fortschrittlichen Anwendungen in der Halbleiterindustrie konzentrieren. Mears wird erörtern, wie OI-Silicium-Epitaxie hochmoderne Nanosheet- und Leistungsgeräte unterstützt und die Schnittstellenengineering zur Steigerung der Mobilität in Gate All Around-Transistoren sowie die Engineering der Dotierungsprofile für verschiedene Halbleiteranwendungen ermöglicht.
- Atomera's CTO to present at a major industry event (PRiME 2024), potentially increasing visibility and credibility
- Presentation focuses on Atomera's proprietary MST® technology and its applications in advanced semiconductor devices
- Potential to showcase Atomera's innovations in addressing current challenges in semiconductor scaling and performance
- None.
Atomera Incorporated (Nasdaq: ATOM):
WHO: |
Robert J. Mears, Chief Technology Officer, Founder of Atomera Incorporated (Nasdaq: ATOM), a semiconductor materials and technology licensing company |
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WHAT: |
In-person presentation entitled “Applications of Oxygen Inserted Epitaxy” |
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WHEN: |
Friday, October 11, 2024, from 10:40 a.m. to 11:10 a.m. (HST) |
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WHERE: |
Room 320 (Level 3, |
Robert J. Mears, CTO and Founder of Atomera will present a paper on the advanced applications of Oxygen Inserted (OI) Epitaxy (one class of Atomera’s MST® film) in the semiconductor industry. Dimensional scaling of transistors over the last two decades has delivered increased performance and reduced cost as captured by the famous Moore’s Law. However, the new paradigm for transistors is to increasingly incorporate new materials to continue to drive transistor performance. One such materials engineering path is to incorporate Group IV based epitaxial materials into transistors. Materials such as SiGe, SiB, SiP, SiGeC, and pure Ge are increasingly being used to enhance transistor performance across multiple applications include high performance compute (logic), memory, RF, photonics and power electronics.
To this end, OI (MST®) silicon epitaxy was developed to add another tool into the toolbox of materials engineering of transistors. This session will explore significant innovations in semiconductor materials, emphasizing how OI silicon has evolved to support cutting-edge nanosheet and power devices. The invited talk will discuss how OI epitaxy enables interface engineering to enable increased mobility in Gate All Around transistors, and dopant profile engineering for power electronics, RFSOI and traditional logic transistors. Attendees will gain insights into OI silicon devices, their fundamental characterization, and the electrical and physical benefits they offer across various semiconductor applications.
Follow Atomera:
Company website: https://atomera.com/
Atomera whitepaper: https://atomera.com/news-and-blogs/
Atomera blog: https://atomera.com/news-and-blogs/
LinkedIn: www.linkedin.com/company/atomera/
About Atomera
Atomera Incorporated, one of America’s top 100 Best Small Companies in 2022 ranked by Forbes, is a semiconductor materials and technology licensing company focused on deploying its proprietary, silicon-proven technology into the semiconductor industry. Atomera has developed Mears Silicon Technology™ (MST®), which increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor. More information can be found at www.atomera.com.
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Source: Atomera Incorporated
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