Media Alert: Atomera Presenting at the International Conference on Simulation of Semiconductor Processes and Devices 2021 (SISPAD)
Atomera Incorporated (Nasdaq: ATOM) will present at the SISPAD 2021 from September 27-29, 2021, focusing on a technique to enhance partially depleted RFSOI MOSFETs. Principal scientist Daniel Connelly will showcase a paper on September 29. The study reveals that Mears Silicon Technology™ (MST®) achieves 20-90% higher body conductance, resulting in improved breakdown voltage for devices. A novel quasi-3D process model aids in simulating these advancements, indicating potential for enhanced semiconductor performance.
- Presentation on MST technology could attract industry interest.
- Demonstration of significant improvements in semiconductor device performance (20-90% higher body conductance).
- Introduction of a novel quasi-3D process model for better simulations.
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The paper demonstrates that Mears Silicon Technology™ (MST®) facilitates 20
The improvements are achieved by using a novel technique for improving partially depleted RFSOI MOSFETs with the use of MST oxygen layers (referred to as OI in the paper) to trap and retain boron doping close to the buried oxide interface and so to form a p+ ground plane. Without MST, the boron is lost to the buried oxide during RFSOI device fabrication.
To facilitate the detailed simulation of these, devices a novel “quasi-3D” process model has been developed and tested against a full 3D simulation. The advantage of the new approach is that it allows reasonable execution time with a much finer 2D cross-sectional mesh than would otherwise be possible, which is particularly important for MST device simulation.
To learn more about the session presented by
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