STOCK TITAN

Media Alert: Atomera Presenting at the International Conference on Simulation of Semiconductor Processes and Devices 2021 (SISPAD)

Rhea-AI Impact
(Neutral)
Rhea-AI Sentiment
(Neutral)
Tags
Rhea-AI Summary

Atomera Incorporated (Nasdaq: ATOM) will present at the SISPAD 2021 from September 27-29, 2021, focusing on a technique to enhance partially depleted RFSOI MOSFETs. Principal scientist Daniel Connelly will showcase a paper on September 29. The study reveals that Mears Silicon Technology™ (MST®) achieves 20-90% higher body conductance, resulting in improved breakdown voltage for devices. A novel quasi-3D process model aids in simulating these advancements, indicating potential for enhanced semiconductor performance.

Positive
  • Presentation on MST technology could attract industry interest.
  • Demonstration of significant improvements in semiconductor device performance (20-90% higher body conductance).
  • Introduction of a novel quasi-3D process model for better simulations.
Negative
  • None.

DALLAS--(BUSINESS WIRE)-- Atomera Incorporated (Nasdaq: ATOM):

What:    

SISPAD 2021

 

   

 

Who:

   

Atomera Incorporated (Nasdaq: ATOM), a semiconductor materials and technology licensing company

 

   

 

Where:

   

The Anatole Hotel

 

   

2201 N Stemmons Fwy

 

   

Dallas, TX 75207

 

   

 

When:

   

September 27-29, 2021. The Conference begins at 9:30 a.m. CDT

Atomera Incorporated will present at the 2021 annual International Conference on Simulation of Semiconductor Processes and Devices. The presentation focuses on a novel technique for improving partially depleted RFSOI MOSFETs.

Daniel Connelly, Atomera’s principal scientist, will be giving the paper, entitled “RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations,” during Session 10: Cryogenic Simulation and Parasitics, on September 29 at 9:30 a.m. CDT.

The paper demonstrates that Mears Silicon Technology™ (MST®) facilitates 20-90% higher body conductance, which in turn leads to higher breakdown voltage in scaled devices where the body conductance to body ties at the edge of the switch can limit performance.

The improvements are achieved by using a novel technique for improving partially depleted RFSOI MOSFETs with the use of MST oxygen layers (referred to as OI in the paper) to trap and retain boron doping close to the buried oxide interface and so to form a p+ ground plane. Without MST, the boron is lost to the buried oxide during RFSOI device fabrication.

To facilitate the detailed simulation of these, devices a novel “quasi-3D” process model has been developed and tested against a full 3D simulation. The advantage of the new approach is that it allows reasonable execution time with a much finer 2D cross-sectional mesh than would otherwise be possible, which is particularly important for MST device simulation.

To learn more about the session presented by Daniel Connelly at SISPAD 2021, visit the conference program at https://sispad2021.org/technical-program/#S10. For more details on the latest developments by Atomera, please visit https://atomera.com/.

Follow Atomera:

Company website: https://atomera.com/
Atomera whitepaper: atomera.com/news-and-blogs/
Atomera blog: atomera.com/news-and-blogs/
LinkedIn: www.linkedin.com/company/atomera/

About Atomera

Atomera Incorporated is a semiconductor materials and technology licensing company focused on deploying its proprietary, silicon-proven technology into the semiconductor industry. Atomera has developed MST, which increases performance and power efficiency in semiconductor transistors. MST can be implemented using equipment already deployed in semiconductor manufacturing facilities and is complementary to other nano-scaling technologies in the semiconductor industry roadmap. More information can be found at www.atomera.com.

Justin Gillespie

The Hoffman Agency

t: (925)719-1097

jgillespie@hoffman.com

Jeff Lewis

Senior VP Marketing and Business Development, Atomera

t: (408)442-5248

jlewis@atomera.com

Source: Atomera Incorporated

FAQ

What is Atomera presenting at SISPAD 2021?

Atomera is presenting a paper on improving partially depleted RFSOI MOSFETs using Mears Silicon Technology™ at SISPAD 2021.

Who is presenting for Atomera at SISPAD 2021?

Daniel Connelly, Atomera's principal scientist, is presenting at SISPAD 2021.

When is Atomera's presentation at SISPAD 2021?

Atomera's presentation is scheduled for September 29, 2021, at 9:30 a.m. CDT.

What is the significance of Mears Silicon Technology™ in Atomera's research?

Mears Silicon Technology™ enhances body conductance by 20-90%, leading to improved performance in semiconductor devices.

Where is SISPAD 2021 being held?

SISPAD 2021 is taking place at The Anatole Hotel in Dallas, TX.

Atomera Incorporated

NASDAQ:ATOM

ATOM Rankings

ATOM Latest News

ATOM Stock Data

166.05M
27.42M
4.72%
22.82%
11.08%
Semiconductor Equipment & Materials
Semiconductors & Related Devices
Link
United States of America
LOS GATOS