STMicroelectronics and Innoscience sign GaN technology development and manufacturing agreement
STMicroelectronics (NYSE: STM) and Innoscience (HKEX:02577.HK) have signed a strategic agreement for GaN (gallium nitride) technology development and manufacturing. The partnership allows Innoscience to use ST's manufacturing capacity outside China while ST can utilize Innoscience's facilities in China, enhancing supply chain flexibility.
The joint development initiative focuses on advancing GaN power technology for consumer electronics, datacenters, automotive and industrial power systems. Innoscience, having shipped over 1 billion GaN devices, brings its expertise in 8-inch GaN-on-Si manufacturing.
GaN power devices offer significant advantages including lower losses, enhanced efficiency, smaller size, and lighter weight. These benefits reduce overall solution costs and carbon footprint. The technology is being rapidly adopted in consumer electronics, data center power supplies, solar inverters, and is being designed into next-generation EV powertrains.
STMicroelectronics (NYSE: STM) e Innoscience (HKEX:02577.HK) hanno firmato un accordo strategico per lo sviluppo e la produzione della tecnologia GaN (nitruro di gallio). Questa partnership consente a Innoscience di utilizzare la capacità produttiva di ST al di fuori della Cina, mentre ST può sfruttare le strutture di Innoscience in Cina, migliorando la flessibilità della catena di approvvigionamento.
L'iniziativa di sviluppo congiunto si concentra sull'avanzamento della tecnologia di potenza GaN per elettronica di consumo, datacenter, automobili e sistemi di alimentazione industriale. Innoscience, avendo spedito oltre 1 miliardo di dispositivi GaN, porta la sua esperienza nella produzione di GaN-on-Si da 8 pollici.
I dispositivi di potenza GaN offrono vantaggi significativi, tra cui minori perdite, maggiore efficienza, dimensioni ridotte e peso inferiore. Questi benefici riducono i costi complessivi delle soluzioni e l'impronta di carbonio. La tecnologia viene rapidamente adottata nell'elettronica di consumo, nelle alimentazioni dei datacenter, negli inverter solari ed è progettata per i sistemi di alimentazione delle auto elettriche di nuova generazione.
STMicroelectronics (NYSE: STM) e Innoscience (HKEX:02577.HK) han firmado un acuerdo estratégico para el desarrollo y fabricación de tecnología GaN (nitruro de galio). Esta asociación permite a Innoscience utilizar la capacidad de fabricación de ST fuera de China, mientras que ST puede aprovechar las instalaciones de Innoscience en China, mejorando la flexibilidad de la cadena de suministro.
La iniciativa de desarrollo conjunto se centra en avanzar en la tecnología de potencia GaN para electrónica de consumo, centros de datos, automoción y sistemas de energía industrial. Innoscience, que ha enviado más de 1 mil millones de dispositivos GaN, aporta su experiencia en la fabricación de GaN-on-Si de 8 pulgadas.
Los dispositivos de potencia GaN ofrecen ventajas significativas, incluyendo menores pérdidas, mayor eficiencia, tamaño reducido y peso más ligero. Estos beneficios reducen los costos generales de las soluciones y la huella de carbono. La tecnología se está adoptando rápidamente en la electrónica de consumo, en las fuentes de alimentación de centros de datos, en inversores solares y se está diseñando para los trenes de potencia de vehículos eléctricos de próxima generación.
STMicroelectronics (NYSE: STM)와 Innoscience (HKEX:02577.HK)는 GaN(질화갈륨) 기술 개발 및 제조를 위한 전략적 계약을 체결했습니다. 이 파트너십을 통해 Innoscience는 중국 외부에서 ST의 제조 능력을 활용할 수 있으며, ST는 중국 내 Innoscience의 시설을 이용하여 공급망의 유연성을 향상시킬 수 있습니다.
공동 개발 이니셔티브는 소비자 전자기기, 데이터 센터, 자동차 및 산업 전력 시스템을 위한 GaN 전력 기술의 발전에 중점을 두고 있습니다. 10억 개 이상의 GaN 장치를 출하한 Innoscience는 8인치 GaN-on-Si 제조에 대한 전문성을 보유하고 있습니다.
GaN 전력 장치는 손실 감소, 효율성 향상, 소형화 및 경량화 등 상당한 이점을 제공합니다. 이러한 이점은 전체 솔루션 비용과 탄소 발자국을 줄입니다. 이 기술은 소비자 전자기기, 데이터 센터 전원 공급 장치, 태양광 인버터에서 빠르게 채택되고 있으며, 차세대 전기차 전력 시스템에 설계되고 있습니다.
STMicroelectronics (NYSE: STM) et Innoscience (HKEX:02577.HK) ont signé un accord stratégique pour le développement et la fabrication de la technologie GaN (nitrure de gallium). Ce partenariat permet à Innoscience d'utiliser la capacité de fabrication de ST en dehors de la Chine, tandis que ST peut tirer parti des installations d'Innoscience en Chine, améliorant ainsi la flexibilité de la chaîne d'approvisionnement.
L'initiative de développement conjoint se concentre sur l'avancement de la technologie de puissance GaN pour l'électronique grand public, les centres de données, l'automobile et les systèmes d'alimentation industriels. Innoscience, ayant expédié plus d'un milliard de dispositifs GaN, apporte son expertise dans la fabrication de GaN-on-Si de 8 pouces.
Les dispositifs de puissance GaN offrent des avantages significatifs, notamment des pertes réduites, une efficacité accrue, une taille plus petite et un poids plus léger. Ces avantages réduisent les coûts globaux des solutions et l'empreinte carbone. La technologie est rapidement adoptée dans l'électronique grand public, les alimentations des centres de données, les onduleurs solaires et est intégrée dans les systèmes de propulsion des véhicules électriques de nouvelle génération.
STMicroelectronics (NYSE: STM) und Innoscience (HKEX:02577.HK) haben eine strategische Vereinbarung zur Entwicklung und Herstellung von GaN (Gallium-Nitrid) Technologie unterzeichnet. Diese Partnerschaft ermöglicht es Innoscience, die Produktionskapazitäten von ST außerhalb Chinas zu nutzen, während ST die Einrichtungen von Innoscience in China verwenden kann, was die Flexibilität der Lieferkette erhöht.
Die gemeinsame Entwicklungsinitiative konzentriert sich auf die Weiterentwicklung der GaN-Leistungstechnologie für Verbraucherelektronik, Rechenzentren, Automobil- und industrielle Energiesysteme. Innoscience, das über 1 Milliarde GaN-Geräte ausgeliefert hat, bringt seine Expertise in der 8-Zoll GaN-on-Si-Produktion ein.
GaN-Leistungshalbleiter bieten erhebliche Vorteile, darunter geringere Verluste, höhere Effizienz, kleinere Größe und geringeres Gewicht. Diese Vorteile senken die Gesamtkosten der Lösungen und den CO2-Fußabdruck. Die Technologie wird schnell in der Verbraucherelektronik, in der Stromversorgung von Rechenzentren, in Solarwechselrichtern übernommen und wird in die Antriebsstränge der nächsten Generation von Elektrofahrzeugen integriert.
- Strategic manufacturing partnership provides supply chain flexibility and global reach
- Access to Innoscience's proven GaN technology with over 1B devices shipped
- Expansion into high-growth markets (AI datacenters, EVs, renewable energy)
- Enhanced manufacturing capacity through mutual facility access
- Dependency on Chinese manufacturing facilities amid geopolitical tensions
- Potential technology sharing risks in competitive semiconductor market
Insights
This strategic partnership between STMicroelectronics and Innoscience significantly enhances STM's position in the power semiconductor market. The agreement creates a two-pronged advantage: accelerating GaN technology development while establishing manufacturing flexibility across regions.
For STM, this deal completes their power semiconductor technology portfolio trifecta - now spanning silicon, silicon carbide, and gallium nitride. This comprehensive approach enables STM to offer optimal solutions across different applications rather than pushing a single technology, positioning them as a complete power solutions provider.
The manufacturing flexibility component represents essential supply chain resilience in today's geopolitical climate. By leveraging Innoscience's China manufacturing while offering European capacity in return, STM creates regional redundancy that can navigate potential trade restrictions or shortages - a lesson semiconductor companies learned painfully during recent supply disruptions.
GaN technology's importance cannot be overstated for high-growth markets including AI data centers, electric vehicles, and renewable energy systems. These applications demand the superior efficiency, smaller size, and reduced weight that GaN provides compared to traditional silicon. With Innoscience having shipped over 1 billion GaN devices, this partnership combines proven manufacturing scale with STM's global reach and diverse technology expertise.
The partnership structure allows both companies to maintain independent market identities while sharing development costs - reflecting the semiconductor industry's evolution toward specialized technology collaborations with manufacturing independence.
The technical significance of this STM-Innoscience partnership cannot be understated. GaN's fundamental material properties enable dramatically lower switching losses, higher frequency operation, and improved thermal performance compared to silicon - directly addressing critical pain points in emerging applications.
For AI data centers, where power consumption has become a primary constraint, GaN delivers substantial efficiency improvements that translate to reduced operating costs and carbon footprint. In electric vehicles, GaN's superior power density enables smaller, lighter power electronics - contributing directly to extended driving range. For renewable energy systems, GaN improves conversion efficiency, maximizing energy capture.
Innoscience's 8-inch GaN-on-Si manufacturing approach is particularly important, as it enables cost-effective scaling compared to smaller wafer formats or exotic substrates. This manufacturing maturity, evidenced by their billion-device shipment milestone, validates GaN's transition from emerging technology to commercial viability.
The cross-regional manufacturing agreement brilliantly addresses supply chain vulnerabilities while navigating increasingly complex semiconductor geopolitics. For STM customers, this means more reliable component supply regardless of trade policies or regional disruptions.
By forming this alliance, STM positions itself to capture share in the rapidly expanding GaN market while creating a comprehensive power semiconductor portfolio across all three major materials. This allows them to match the optimal technology to each application's specific requirements rather than forcing compromises with a technology set.
STMicroelectronics and Innoscience sign GaN technology development and manufacturing agreement
- Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI datacenters, renewable energy generation and storage, cars and more
- Innoscience can make use of manufacturing capacity of ST in Europe while ST can leverage manufacturing capacity at Innoscience in China
Geneva and Suzhou, March 31st, 2025 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, and Innoscience (HKEX:02577.HK), the world leader in 8” GaN-on-Si (gallium nitride on silicon) high-performance low-cost manufacturing, announce the signature of an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.
The companies have agreed on a joint development initiative on GaN power technology, to advance the promising future of GaN power for consumer electronics, datacenters, automotive and industrial power systems and many more applications in the coming years. In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end manufacturing capacity in China for its own GaN wafers. The common ambition is for each company to expand their individual offering in GaN with supply chain flexibility and resilience to cover all customers’ requirements in a wide range of applications.
Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device Manufacturers, and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally.”
Dr. Weiwei Luo, Chairman and Founder of Innoscience, stated “GaN technology is essential to improve electronics, creating smaller and more efficient systems which save electric power, lower cost, and reduce CO2 Emissions. Innoscience pioneered mass production of 8-inch GaN technology and has shipped over 1 billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST. The joint collaboration between ST and Innoscience will further expand and accelerate the adoption of GaN technology. Together the teams at Innoscience and ST will develop the next generations of GaN technology”.
GaN power devices leverage fundamental material properties that enable new standards of system performance in power conversion, motion control, and actuation, offering significantly lower losses, which allows for enhanced efficiency, smaller size, and lighter weight, thus reducing the overall solution cost and carbon footprint; these devices are rapidly being adopted in consumer electronics, data center and industrial power supplies, and solar inverters, and are being actively designed into next-generation EV powertrains due to their substantial size and weight reduction benefits.
About STMicroelectronics
At ST, we are 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are on track to be carbon neutral in all direct and indirect emissions (scopes 1 and 2), product transportation, business travel, and employee commuting emissions (our scope 3 focus), and to achieve our
About Innoscience
Innoscience (HKEX:02577.HK) is the global leader in gallium nitride process innovation and power device manufacturing. Innoscience’s device design and performance set the worldwide standard for GaN, and the culture of continuous improvement will accelerate GaN performance and market adoption. The company's gallium nitride products are used in multiple low, medium and high voltage applications, with GaN process nodes covering 15V to 1200V. Wafers, discrete devices, integrated power ICs, and modules provide customers with robust GaN solutions. With 800 patents granted or pending, Innoscience’s products are known for reliability, performance, and functionality within the fields of consumer electronics, automotive electronics, data centers, renewable energy and industrial power. Innoscience creates a bright future for GaN. Please visit www.innoscience.com for more information.
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Alexis Breton
Group VP Corporate External Communications
Tel: +33.6.59.16.79.08
alexis.breton@st.com
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Jérôme Ramel
EVP Corporate Development & Integrated External Communication
Tel: +41.22.929.59.20
jerome.ramel@st.com
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